Patents by Inventor Tsu-Yi Fu

Tsu-Yi Fu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Atomically sharp iridium tip
    Patent number: 7737414
    Abstract: A method for preparing an iridium tip with atomic sharpness. The method includes tapering an iridium wire to a needle shape and heating the iridium needle in an oxygen atmosphere. Also disclosed is an iridium needle having a pyramidal structure which terminates with a small number of atoms prepared by the methods.
    Type: Grant
    Filed: October 26, 2007
    Date of Patent: June 15, 2010
    Assignee: Academia Sinica
    Inventors: Hong-Shi Kuo, Ing-Shouh Hwang, Tien T. Tsong, Tsu-Yi Fu
  • Atomically Sharp Iridium Tip
    Publication number: 20090110951
    Abstract: A method for preparing an iridium tip with atomic sharpness. The method includes tapering an iridium wire to a needle shape and heating the iridium needle in an oxygen atmosphere. Also disclosed is an iridium needle having a pyramidal structure which terminates with a small number of atoms prepared by the methods.
    Type: Application
    Filed: October 26, 2007
    Publication date: April 30, 2009
    Applicant: Academia Sinica
    Inventors: Hong-Shi Kuo, Ing-shouh Hwang, Tien T. Tsong, Tsu-Yi Fu
  • Single-atom tip and preparation method thereof
    Patent number: 7507320
    Abstract: This invention discloses an electrochemical method for the preparation of single atom tips to replace the traditional vacuum evaporation method. The invented method for preparation of single atom tips includes the following steps: A substrate single crystal metal wire etched electrochemically to form a tip. The surface of the metal tip is cleaned. A small quantity of noble metal is plated on the apex of the tip in low concentration noble metal electrolyte. Annealing in vacuum or in inert gas ambient to diffuse the additional electroplated noble metal atoms and thus a single atom tip is formed on the surface of the substrate. The present invention also discloses the single atom tip so prepared. The single atom tip of this invention has only a very small number of atoms, usually only one atom, at its apex.
    Type: Grant
    Filed: October 9, 2004
    Date of Patent: March 24, 2009
    Assignee: Academia Sinica
    Inventors: Ing-Shouh Hwang, Hong-Shi Kuo, Tien T. Tsong, Tsu-Yi Fu
  • Single-atom tip and preparation method thereof
    Publication number: 20060075626
    Abstract: This invention discloses an electrochemical method for the preparation of single atom tips to replace the traditional vacuum evaporation method. The invented method for preparation of single atom tips includes the following steps: A substrate single crystal metal wire etched electrochemically to form a tip. The surface of the metal tip is cleaned. A small quantity of noble metal is plated on the apex of the tip in low concentration noble metal electrolyte. Annealing in vacuum or in inert gas ambient to diffuse the additional electroplated noble metal atoms and thus a single atom tip is formed on the surface of the substrate. The present invention also discloses the single atom tip so prepared. The single atom tip of this invention has only a very small number of atoms, usually only one atom, at its apex.
    Type: Application
    Filed: October 9, 2004
    Publication date: April 13, 2006
    Inventors: Ing-Shouh Hwang, Hong-Shi Kuo, Tien Tsong, Tsu-Yi Fu