Abstract: A grinding apparatus and a grinding method of a composite substrate including resin, by which loading of a grinding wheel can be suppressed in grinding of a large-sized composite substrate including resin, and with which grinding can be effectively performed with high precision. This method for grinding a front surface of a composite substrate formed with a resin substrate embedded with at least one of a semiconductor device chip and an electrode, includes: bringing at least a part of a grinding member for grinding the front surface of the composite substrate into contact with the front surface; supplying water to at least one of a contacting part or a non-contacting part between the front surface of the composite substrate and the grinding member; and grinding the front surface of the composite substrate simultaneously with the supplying water.

Abstract: A method for manufacturing a semiconductor device includes chucking in which a semiconductor device wafer is attached to an upper surface of a chuck mechanism with its device surface down; and edge trimming performed after the chucking, wherein the edge trimming comprises: rotating the semiconductor device water horizontally by the chuck mechanism; rotating a rotating blade horizontally by a vertical spindle to which an ultrasonic wave is applied and trimming a circumferential side surface of the semiconductor device wafer by the rotating blade.

Abstract: There is provided a method for manufacturing a semiconductor device, including: attracting a semiconductor device wafer by a chuck mechanism and rotating the semiconductor device wafer horizontally; rotating a rotary blade horizontally by a vertical spindle to which ultrasonic waves are applied; trimming an outer peripheral end portion of the semiconductor device wafer that is horizontally rotating by the rotary blade that is horizontally rotating, to form a groove in the outer peripheral end portion; correcting a tip shape of the rotary blade that is horizontally rotating by a blade-forming grinding wheel during the trimming; and grinding one main surface of the semiconductor device wafer that is horizontally rotating by a cup grinding wheel that is horizontally rotating after the trimming.

Abstract: There is provided a grinding method for grinding a substrate with a grinding wheel. A dissimilar material portion made of a material different from a main constituent material of the substrate is embedded in the substrate. The grinding method includes: lowering the grinding wheel toward the substrate rotating while rotating the grinding wheel, and grinding the substrate by the grinding wheel; continuously imaging a processed surface of the substrate by an image sensor during grinding the substrate; analyzing an amount of exposure of the dissimilar material portion based on data of an image captured by the image sensor; and continuously grinding the substrate from a state where the dissimilar material portion begins to be exposed to a stage where the amount of exposure of the dissimilar material portion reaches a predetermined set value, based on the amount of exposure analyzed.

Abstract: A grinding apparatus and a grinding method of a composite substrate including resin, by which loading of a grinding wheel can be suppressed in grinding of a large-sized composite substrate including resin, and with which grinding can be effectively performed with high precision. This method for grinding a front surface of a composite substrate formed with a resin substrate embedded with at least one of a semiconductor device chip and an electrode, includes: bringing at least a part of a grinding member for grinding the front surface of the composite substrate into contact with the front surface; supplying water to at least one of a contacting part or a non-contacting part between the front surface of the composite substrate and the grinding member; and grinding the front surface of the composite substrate simultaneously with the supplying water.

Abstract: Provided is a substrate grinding device including: a work table rotatable with the work table sucking and holding a substrate; a cup wheel-type first grinding wheel configured to grind the rotating substrate while rotating, the substrate being held by the work table; and a cup wheel-type second grinding wheel configured to grind the substrate along with grinding by the first grinding wheel while rotating in a close vicinity of the substrate.

Abstract: A method for manufacturing a semiconductor device includes chucking in which a semiconductor device wafer is attached to an upper surface of a chuck mechanism with its device surface down; and edge trimming performed after the chucking, wherein the edge trimming comprises: rotating the semiconductor device water horizontally by the chuck mechanism; rotating a rotating blade horizontally by a vertical spindle to which an ultrasonic wave is applied and trimming a circumferential side surface of the semiconductor device wafer by the rotating blade.