Abstract: According to one embodiment, a solid state image capture device includes a multilayered interconnect layer, a semiconductor substrate, a pillar diffusion layer and an insulating member. The multilayered interconnect layer includes an interconnect. The semiconductor substrate is provided on the multilayered interconnect layer and the semiconductor substrate has a through-trench. The pillar diffusion layer is formed in the semiconductor substrate around the through-trench. In addition, an insulating member is filled into the through-trench.

Abstract: A method of manufacturing a solid-state image pickup device according to an embodiment includes forming first and second holes in a semiconductor substrate, forming insulating films on surfaces of the first and second holes, forming a contact and an alignment mark by embedding a conducting material in the first and second holes, forming a photodiode in the semiconductor substrate, forming a wiring layer including a connecting part for connecting to the contact and a wiring for connecting to the connecting part, bonding a supporting substrate on the wiring layer, exposing the contact and the alignment mark on the surface of the semiconductor substrate by reducing the semiconductor substrate in thickness, and forming a filter and a lens on the photodiode based on the alignment mark.

Abstract: According to one embodiment, a solid state image capture device includes a multilayered interconnect layer, a semiconductor substrate, a pillar diffusion layer and an insulating member. The multilayered interconnect layer includes an interconnect. The semiconductor substrate is provided on the multilayered interconnect layer and the semiconductor substrate has a through-trench. The pillar diffusion layer is formed in the semiconductor substrate around the through-trench. In addition, an insulating member is filled into the through-trench.

Abstract: A method of manufacturing a solid-state image pickup device according to an embodiment includes forming first and second holes in a semiconductor substrate, forming insulating films on surfaces of the first and second holes, forming a contact and an alignment mark by embedding a conducting material in the first and second holes, forming a photodiode in the semiconductor substrate, forming a wiring layer including a connecting part for connecting to the contact and a wiring for connecting to the connecting part, bonding a supporting substrate on the wiring layer, exposing the contact and the alignment mark on the surface of the semiconductor substrate by reducing the semiconductor substrate in thickness, and forming a filter and a lens on the photodiode based on the alignment mark.

Abstract: A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

Abstract: A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

Abstract: A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

Abstract: A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

Abstract: A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

Abstract: A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.

Abstract: A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.