Patents by Inventor Tsubasa MATSUMOTO
Tsubasa MATSUMOTO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11931979Abstract: A tire vulcanization mold in which a surface roughness in the groove molding portion of the tread molding surface is made smaller than a surface roughness in the land portion molding portion, in which a surface roughness in the groove molding portion is minimized to 0.12 ?m or less in a range including at least a main groove molding portion, and in which a surface roughness in the land portion molding portion is made to be 3.2 ?m or more, is used to manufacture a tire, and when cleaning the tread molding surface, the tread molding surface is irradiated with a laser beam to remove contaminant adhered to the tread molding surface.Type: GrantFiled: July 1, 2020Date of Patent: March 19, 2024Assignee: The Yokohama Rubber Co., LTD.Inventors: Tsubasa Kitahara, Yoshiaki Matsumoto, Mika Nagashima, Mitsuo Tsuji, Yoshinori Izumi, Rinko Kushida, Koichiro Miyoshi
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Patent number: 11753740Abstract: A method for manufacturing diamond substrate of using source gas containing hydrocarbon gas and hydrogen gas to form diamond crystal on an underlying substrate by CVD method, to form a diamond crystal layer having nitrogen-vacancy centers in at least part of the diamond crystal, nitrogen or nitride gas is mixed in the source gas, wherein the source gas is: 0.005 volume % or more and 6.000 volume % or less of the hydrocarbon gas; 93.500 volume % or more and less than 99.995 volume % of the hydrogen gas; and 5.0×10?5 volume % or more and 5.0×10?1 volume % or less of the nitrogen gas or the nitride gas, and the diamond crystal layer having the nitrogen-vacancy centers is formed. A method for manufacturing a diamond substrate to form an underlying substrate, a diamond crystal having a dense nitrogen-vacancy centers (NVCs) with an orientation of NV axis by performing the CVD.Type: GrantFiled: November 16, 2020Date of Patent: September 12, 2023Assignees: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi Noguchi, Norio Tokuda, Tsubasa Matsumoto
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Publication number: 20230250553Abstract: A method for manufacturing diamond substrate of using source gas containing hydrocarbon gas and hydrogen gas to form diamond crystal on an underlying substrate by CVD method, to form a diamond crystal layer having nitrogen-vacancy centers in at least part of the diamond crystal, nitrogen or nitride gas is mixed in the source gas, wherein the source gas is: 0.005 volume % or more and 6.000 volume % or less of the hydrocarbon gas; 93.500 volume % or more and less than 99.995 volume % of the hydrogen gas; and 5.0×10?5 volume % or more and 5.0×10?1 volume % or less of the nitrogen gas or the nitride gas, and the diamond crystal layer having the nitrogen-vacancy centers is formed. A method for manufacturing a diamond substrate to form an underlying substrate, a diamond crystal having a dense nitrogen-vacancy centers (NVCs) with an orientation of NV axis by performing the CVD.Type: ApplicationFiled: April 14, 2023Publication date: August 10, 2023Applicants: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi NOGUCHI, Norio TOKUDA, Tsubasa MATSUMOTO
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Publication number: 20230145055Abstract: The present invention provides a novel semiconductor device for high breakdown voltage having no drift layer.Type: ApplicationFiled: April 12, 2021Publication date: May 11, 2023Inventors: Hiromitsu Kato, Masahiko Ogura, Toshiharu Makino, Satoshi Yamasaki, Tsubasa Matsumoto, Norio Tokuda, Takao Inokuma
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Patent number: 11066757Abstract: A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.Type: GrantFiled: November 2, 2018Date of Patent: July 20, 2021Assignees: Shin-Etsu Chemical Co., Ltd., National Institute of Advanced Industrial Science and Technology, National University Corporation Kanazawa UniversityInventors: Hitoshi Noguchi, Shozo Shirai, Toshiharu Makino, Masahiko Ogura, Hiromitsu Kato, Hiroyuki Kawashima, Daisuke Kuwabara, Satoshi Yamasaki, Daisuke Takeuchi, Norio Tokuda, Takao Inokuma, Tsubasa Matsumoto
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Publication number: 20210148005Abstract: A method for manufacturing diamond substrate of using source gas containing hydrocarbon gas and hydrogen gas to form diamond crystal on an underlying substrate by CVD method, to form a diamond crystal layer having nitrogen-vacancy centers in at least part of the diamond crystal, nitrogen or nitride gas is mixed in the source gas, wherein the source gas is: 0.005 volume % or more and 6.000 volume % or less of the hydrocarbon gas; 93.500 volume % or more and less than 99.995 volume % of the hydrogen gas; and 5.0×10?5 volume % or more and 5.0×10?1 volume % or less of the nitrogen gas or the nitride gas, and the diamond crystal layer having the nitrogen-vacancy centers is formed. A method for manufacturing a diamond substrate to form an underlying substrate, a diamond crystal having a dense nitrogen-vacancy centers (NVCs) with an orientation of NV axis by performing the CVD.Type: ApplicationFiled: November 16, 2020Publication date: May 20, 2021Applicants: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi NOGUCHI, Norio TOKUDA, Tsubasa MATSUMOTO
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Patent number: 10253426Abstract: A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.Type: GrantFiled: February 28, 2017Date of Patent: April 9, 2019Assignees: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi Noguchi, Shozo Shirai, Toshiharu Makino, Masahiko Ogura, Hiromitsu Kato, Hiroyuki Kawashima, Daisuke Kuwabara, Satoshi Yamasaki, Daisuke Takeuchi, Norio Tokuda, Takao Inokuma, Tsubasa Matsumoto
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Publication number: 20190093253Abstract: A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.Type: ApplicationFiled: November 2, 2018Publication date: March 28, 2019Applicants: SHIN-ETSU CHEMICAL CO., LTD., National Institute of Advanced Industrial Science and Technology, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITInventors: Hitoshi NOGUCHI, Shozo SHIRAI, Toshiharu MAKINO, Masahiko OGURA, Hiromitsu KATO, Hiroyuki KAWASHIMA, Daisuke KUWABARA, Satoshi YAMASAKI, Daisuke TAKEUCHI, Norio TOKUDA, Takao INOKUMA, Tsubasa MATSUMOTO
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Patent number: 10100435Abstract: The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.Type: GrantFiled: February 28, 2017Date of Patent: October 16, 2018Assignees: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi Noguchi, Shozo Shirai, Toshiharu Makino, Masahiko Ogura, Hiromitsu Kato, Hiroyuki Kawashima, Daisuke Kuwabara, Satoshi Yamasaki, Daisuke Takeuchi, Norio Tokuda, Takao Inokuma, Tsubasa Matsumoto
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Publication number: 20170247811Abstract: The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.Type: ApplicationFiled: February 28, 2017Publication date: August 31, 2017Applicants: SHIN-ETSU CHEMICAL CO., LTD., National Institute of Advanced Industrial Science and Technology, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi NOGUCHI, Shozo SHIRAI, Toshiharu MAKINO, Masahiko OGURA, Hiromitsu KATO, Hiroyuki KAWASHIMA, Daisuke KUWABARA, Satoshi YAMASAKI, Daisuke TAKEUCHI, Norio TOKUDA, Takao INOKUMA, Tsubasa MATSUMOTO
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Publication number: 20170247814Abstract: The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.Type: ApplicationFiled: February 28, 2017Publication date: August 31, 2017Applicants: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi NOGUCHI, Shozo SHIRAI, Toshiharu MAKINO, Masahiko OGURA, Hiromitsu KATO, Hiroyuki KAWASHIMA, Daisuke KUWABARA, Satoshi YAMASAKI, Daisuke TAKEUCHI, Norio TOKUDA, Takao INOKUMA, Tsubasa MATSUMOTO