Abstract: A plasma processing method to detect and process a thickness of the processing target film with high accuracy when a fine shape of the semiconductor wafer surface varies, including detecting a state of a processing target film of a processing target material that is processed inside a vacuum processing chamber; detecting light emission of the plasma; obtaining a differential waveform data of the light emission of the plasma; storing a plurality of pieces of differential waveform pattern data in advance; calculating an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained and the plurality of pieces of differential waveform pattern data stored; and determining an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated.

Abstract: Provided is a processing state detection unit includes: a light emission detection unit configured to detect light emission of the plasma; a calculation unit configured to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit configured to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit configured to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.

Abstract: A plasma processing apparatus and method in which light with a plurality of wavelengths from a surface of a wafer at a plurality of predetermined times during processing for the wafer as the processing target is received, and when a processing amount is detected by using a result acquired by comparing data indicating intensities of the received light with the plurality of wavelengths with comparative data acquired in advance and indicating intensities of the light with the plurality of wavelengths, a similarity in wafers is quantified based on the data indicating the intensities of the light with the plurality of wavelengths of light, and the processing amount is detected by comparing at least one piece of data selected according to the quantified similarity with the data indicating the intensities of the light with the plurality of wavelengths acquired during the processing for the plurality of wafers.

Abstract: A plasma processing apparatus 1 that performs, on a wafer 16 in which a multilayer film in which an insulating film and a film to be processed containing a metal are alternately laminated is formed on a substrate, plasma etching of the film to be processed, includes: a processing chamber 10 which is disposed inside a vacuum container; a sample stage 14 which is disposed inside the processing chamber and on which the wafer is placed; a detection unit 28 which detects reflected light obtained by the wafer reflecting light emitted to the wafer; a control unit 40 which controls plasma processing on the wafer; and an end point determination unit 30 which determines an etching end point of the film to be processed based on a change in an amplitude of vibration in a wavelength direction of a light spectrum of the reflected light, and the control unit receives determination of the end point made by the end point determination unit and stops the plasma processing on the wafer.

Abstract: An electrical connector includes an insulating housing, which is equipped with a base section, a tongue-shaped section, multiple accommodation concave sections formed on the tongue-shaped section, and multiple protrusion sections extending from tip surfaces of the multiple accommodation sections toward a base end side, and multiple contacts, which are held on the tongue-shaped section of the housing so as to be arranged on a contact plane and extend linearly along an insertion/removal direction of a mating connector. Respective tip sections of the multiple contacts are located within the multiple accommodation concave sections, and the multiple protrusion sections are in contact with the tip sections of the multiple contacts. The multiple contacts are not bonded to the tongue-shaped section of the housing.

Abstract: A plasma processing apparatus 1 that performs, on a wafer 16 in which a multilayer film in which an insulating film and a film to be processed containing a metal are alternately laminated is formed on a substrate, plasma etching of the film to be processed, includes: a processing chamber 10 which is disposed inside a vacuum container; a sample stage 14 which is disposed inside the processing chamber and on which the wafer is placed; a detection unit 28 which detects reflected light obtained by the wafer reflecting light emitted to the wafer; a control unit 40 which controls plasma processing on the wafer; and an end point determination unit 30 which determines an etching end point of the film to be processed based on a change in an amplitude of vibration in a wavelength direction of a light spectrum of the reflected light, and the control unit receives determination of the end point made by the end point determination unit and stops the plasma processing on the wafer.

Abstract: A plasma processing method to detect and process a thickness of the processing target film with high accuracy when a fine shape of the semiconductor wafer surface varies, including detecting a state of a processing target film of a processing target material that is processed inside a vacuum processing chamber; detecing light emission of the plasma; obtaining a differential waveform data of the light emission of the plasma; storing a plurality of pieces of differential waveform pattern data in advance; calculating an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained and the plurality of pieces of differential waveform pattern data stored; and determining an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated.

Abstract: A plasma processing apparatus including a processing state detection unit having: a light emission detection unit to detect light emission of the plasma; a calculation unit to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.

Abstract: Provided is a processing state detection unit includes: a light emission detection unit configured to detect light emission of the plasma; a calculation unit configured to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit configured to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit configured to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.

Abstract: A plasma processing apparatus including a processing state detection unit having: a light emission detection unit to detect light emission of the plasma; a calculation unit to obtain a differential waveform data of the light emission of the plasma; a database unit that stores a plurality of pieces of differential waveform pattern data in advance; a film thickness calculation unit to calculate an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained by the calculation unit and the plurality of pieces of differential waveform pattern data stored in the database unit; and an end point determination unit to determine an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated by the film thickness calculation unit.