Patents by Inventor Tsubasa Shiratori
Tsubasa Shiratori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11967502Abstract: Methods of forming a material layer according to some embodiments of the inventive concept may include a deposition cycle including providing an adsorption inhibitor on a substrate, purging an excess amount of the adsorption inhibitor, providing a metal precursor on the substrate, purging an excess amount of the metal precursor, and supplying a reactant to form a material layer on the substrate. The adsorption inhibitor may include a group 15 element or a group 16 element.Type: GrantFiled: June 25, 2021Date of Patent: April 23, 2024Assignees: Samsung Electronics Co., Ltd., ADEKA CORPORATIONInventors: Younsoo Kim, Jaewoon Kim, Haeryong Kim, Jinho Lee, Tsubasa Shiratori
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Patent number: 11807652Abstract: The present invention provides a tungsten compound represented by the following general formula (1): (in the formula, X represents a halogen atom, R1 to R5 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R6 represents a tertiary butyl group or a tertiary pentyl group, and R7 represents an alkyl group having 1 to 5 carbon atoms. However, when R1 to R5 are all hydrogen atoms and R6 is a tertiary butyl group, and when R1 to R5 are all methyl groups and R6 is a tertiary butyl group, R7 represents an alkyl group having 1 to 3 or 5 carbon atoms).Type: GrantFiled: July 4, 2018Date of Patent: November 7, 2023Assignee: ADEKA CORPORATIONInventors: Akio Saito, Tsubasa Shiratori, Yutaro Aoki
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Publication number: 20230220213Abstract: Compositions for manufacturing a thin film are provided. The compositions may include a compound having a structure of Chemical Formula 1: M may be strontium (Sr) or barium (Ba), X1 and X2 may each independently be oxygen (O) or a substituted or unsubstituted alkylamino group having 1 to 5 carbon atoms, R1 and R2 may each independently be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms or a substituted or unsubstituted perfluoro alkyl group having 1 to 5 carbon atoms, R3 may be hydrogen or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, L may be a substituted or unsubstituted polyether having 1 to 6 oxygen atoms, or a substituted or unsubstituted polyamine having 1 to 6 nitrogen atoms, or a substituted or unsubstituted polyetheramine having 1 to 6 oxygen atoms or nitrogen atoms, and n may be an integer of 1 to 6.Type: ApplicationFiled: December 22, 2022Publication date: July 13, 2023Applicant: ADEKA CORPORATIONInventors: JAE WOON KIM, Seung-min Ryu, Haruyoshi Sato, Kazuya Saito, Masayuki Kimura, Takahiro Yoshii, Tsubasa Shiratori, Min Jae Sung, Gyu-Hee Park, Youn Joung Cho
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Publication number: 20210407795Abstract: Methods of forming a material layer according to some embodiments of the inventive concept may include a deposition cycle including providing an adsorption inhibitor on a substrate, purging an excess amount of the adsorption inhibitor, providing a metal precursor on the substrate, purging an excess amount of the metal precursor, and supplying a reactant to form a material layer on the substrate. The adsorption inhibitor may include a group 15 element or a group 16 element.Type: ApplicationFiled: June 25, 2021Publication date: December 30, 2021Applicant: ADEKA CORPORATIONInventors: YOUNSOO KIM, Jaewoon Kim, Haeryong Kim, Jinho Lee, Tsubasa Shiratori
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Patent number: 10927460Abstract: A raw material for forming a thin film that includes a compound represented by General Formula (1) below. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms; R2 to R5 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms; A represents an alkanediyl group having 1 to 4 carbon atoms; and M represents titanium, zirconium or hafnium. Provided that when M represents zirconium, A represents an alkanediyl group having 3 or 4 carbon atoms. When M represents titanium or hafnium, it is preferred that A represents an alkanediyl group having 2 or 3 carbon atoms. When M represents zirconium, it is preferred that A represent an alkanediyl group having 3 carbon atoms.Type: GrantFiled: February 27, 2017Date of Patent: February 23, 2021Assignee: ADEKA CORPORATIONInventors: Hiroki Sato, Naoki Yamada, Tsubasa Shiratori, Haruyoshi Sato
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Patent number: 10913754Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.Type: GrantFiled: January 18, 2019Date of Patent: February 9, 2021Assignees: SAMSUNG ELECTRONICS CO., LTD., ADEKA CORPORATIONInventors: Gyu-hee Park, Youn-soo Kim, Jae-soon Lim, Youn-joung Cho, Kazuki Harano, Haruyoshi Sato, Tsubasa Shiratori, Naoki Yamada
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Patent number: 10900119Abstract: Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below. In Formula 1, R1, R2, and R3 independently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; R4 and R5 independently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of R1 and R2 are provided in two. Two R1s are independently of each other, and two R2s are independently of each other.Type: GrantFiled: December 27, 2017Date of Patent: January 26, 2021Assignees: Samsung Electronics Co., Ltd., Adeka CorporationInventors: Soyoung Lee, Jaesoon Lim, Jieun Yun, Akio Saito, Tsubasa Shiratori, Yutaro Aoki
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Publication number: 20200216479Abstract: The present invention provides a tungsten compound represented by the following general formula (1): (in the formula, X represents a halogen atom, R1 to R5 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R6 represents a tertiary butyl group or a tertiary pentyl group, and R7 represents an alkyl group having 1 to 5 carbon atoms. However, when R1 to R5 are all hydrogen atoms and R6 is a tertiary butyl group, and when R1 to R5 are all methyl groups and R6 is a tertiary butyl group, R7 represents an alkyl group having 1 to 3 or 5 carbon atoms).Type: ApplicationFiled: July 4, 2018Publication date: July 9, 2020Applicant: ADEKA CORPORATIONInventors: Akio SAITO, Tsubasa SHIRATORI, Yutaro AOKI
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Patent number: 10651031Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):Type: GrantFiled: November 8, 2018Date of Patent: May 12, 2020Assignees: Samsung Electronics Co., Ltd., Adeka CorporationInventors: Seung-min Ryu, Takanori Koide, Naoki Yamada, Jae-soon Lim, Tsubasa Shiratori, Youn-joung Cho
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Publication number: 20190292663Abstract: A raw material for forming a thin film that includes a compound represented by General Formula (1) below. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms; R2 to R5 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms; A represents an alkanediyl group having 1 to 4 carbon atoms; and M represents titanium, zirconium or hafnium. Provided that when M represents zirconium, A represents an alkanediyl group having 3 or 4 carbon atoms. When M represents titanium or hafnium, it is preferred that A represents an alkanediyl group having 2 or 3 carbon atoms. When M represents zirconium, it is preferred that A represent an alkanediyl group having 3 carbon atoms.Type: ApplicationFiled: February 27, 2017Publication date: September 26, 2019Applicant: ADEKA CORPORATIONInventors: Hiroki SATO, Naoki YAMADA, Tsubasa SHIRATORI, Haruyoshi SATO
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Patent number: 10364495Abstract: The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), R1 and R2 each independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and R3 denotes a methyl group or ethyl group. It is preferable for R1 and R2 to be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.Type: GrantFiled: April 10, 2017Date of Patent: July 30, 2019Assignee: ADEKA CORPORATIONInventors: Tomoharu Yoshino, Atsushi Sakurai, Tsubasa Shiratori, Masako Hatase, Hiroyuki Uchiuzou, Akihiro Nishida
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Publication number: 20190152996Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.Type: ApplicationFiled: January 18, 2019Publication date: May 23, 2019Applicant: ADEKA CORPORATIONInventors: Gyu-hee PARK, Youn-soo KIM, Jae-soon LIM, Youn-joung CHO, Kazuki HARANO, Haruyoshi SATO, Tsubasa SHIRATORI, Naoki YAMADA
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Publication number: 20190074175Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):Type: ApplicationFiled: November 8, 2018Publication date: March 7, 2019Applicant: ADEKA CORPORATIONInventors: Seung-min RYU, Takanori KOIDE, Naoki YAMADA, Jae-soon LIM, Tsubasa SHIRATORI, Youn-joung CHO
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Publication number: 20180363131Abstract: Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below. In Formula 1, R1, R2, and R3 independently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; R4 and R5 independently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of R1 and R2 are provided in two. Two R1s are independently of each other, and two R2s are independently of each other.Type: ApplicationFiled: December 27, 2017Publication date: December 20, 2018Applicants: Samsung Electronics Co., Ltd., Adeka CorporationInventors: Soyoung Lee, Jaesoon Lim, Jieun Yun, Akio Saito, Tsubasa Shiratori, Yutaro Aoki
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Patent number: 10155784Abstract: An alcohol compound of formula (II) in which R4 represents a methyl group or an ethyl group, R5 represents a hydrogen atom, and R6 represents a C1-3 linear or branched alkyl group. The alcohol compound has physical properties suitable for a material for forming thin films by CVD, and particularly, physical properties suitable for a material for forming metallic-copper thin films.Type: GrantFiled: January 4, 2018Date of Patent: December 18, 2018Assignee: ADEKA CORPORATIONInventors: Atsushi Sakurai, Masako Hatase, Naoki Yamada, Tsubasa Shiratori, Akio Saito, Tomoharu Yoshino
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Patent number: 10134582Abstract: A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):Type: GrantFiled: October 20, 2016Date of Patent: November 20, 2018Assignees: SAMSUNG ELECTRONICS CO., LTD., ADEKA CORPORATIONInventors: Seung-min Ryu, Takanori Koide, Naoki Yamada, Jae-soon Lim, Tsubasa Shiratori, Youn-joung Cho
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Publication number: 20180134739Abstract: Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R1 represents a methyl group or an ethyl group, R2 represents a hydrogen atom or a methyl group, R3 represents a C1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.Type: ApplicationFiled: January 4, 2018Publication date: May 17, 2018Inventors: Atsushi SAKURAI, Masako HATASE, Naoki YAMADA, Tsubasa SHIRATORI, Akio SAITO, Tomoharu YOSHINO
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Patent number: 9960032Abstract: Provided herein are methods of forming thin films. In some embodiments, to form a thin film, a precursor adsorption layer including an organic ligand is formed by supplying a precursor including a metal or silicon central atom, and the organic ligand onto a lower structure. An intermediate result layer is formed by supplying a non-oxidant onto the precursor adsorption layer. In forming the intermediate result layer, the organic ligand included in the precursor adsorption layer is substituted with a substituent. An oxide film including the central atom is formed from the intermediate result layer by supplying an oxidant onto the intermediate result layer.Type: GrantFiled: June 15, 2016Date of Patent: May 1, 2018Assignees: Samsung Electronics Co., Ltd., ADEKA CORPORATIONInventors: Jae wan Chang, Youn soo Kim, Tsubasa Shiratori
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Patent number: 9896468Abstract: Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R1 represents a methyl group or an ethyl group, R2 represents a hydrogen atom or a methyl group, R3 represents a C1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.Type: GrantFiled: October 21, 2013Date of Patent: February 20, 2018Assignee: ADEKA CORPORATIONInventors: Atsushi Sakurai, Masako Hatase, Naoki Yamada, Tsubasa Shiratori, Akio Saito, Tomoharu Yoshino
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Publication number: 20170211184Abstract: The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), R1 and R2 each independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and R3 denotes a methyl group or ethyl group. It is preferable for R1 and R2 to be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.Type: ApplicationFiled: April 10, 2017Publication date: July 27, 2017Inventors: Tomoharu YOSHINO, Atsushi SAKURAI, Tsubasa SHIRATORI, Masako HATASE, Hiroyuki UCHIUZOU, Akihiro NISHIDA