Abstract: A photoelectric conversion element including a first gate electrode, a first gate insulating layer, a crystalline semiconductor layer, an amorphous semiconductor layer, an impurity semiconductor layer, a source electrode and a drain electrode in contact with the impurity semiconductor layer, a second gate insulating layer covering a region between the source electrode and the drain electrode, and a second gate electrode over the second gate insulating layer. In the photoelectric conversion element, a light-receiving portion is provided in the region between the source electrode and the drain electrode, the first gate electrode includes a light-shielding material and overlaps with the entire surface of the crystalline semiconductor layer and the amorphous semiconductor layer, the second gate electrode includes a light-transmitting material and overlaps with the light-receiving portion, and the first gate electrode is electrically connected to the source electrode or the drain electrode is provided.

Abstract: A photoelectric conversion element including a first gate electrode, a first gate insulating layer, a crystalline semiconductor layer, an amorphous semiconductor layer, an impurity semiconductor layer, a source electrode and a drain electrode in contact with the impurity semiconductor layer, a second gate insulating layer covering a region between the source electrode and the drain electrode, and a second gate electrode over the second gate insulating layer. In the photoelectric conversion element, a light-receiving portion is provided in the region between the source electrode and the drain electrode, the first gate electrode includes a light-shielding material and overlaps with the entire surface of the crystalline semiconductor layer and the amorphous semiconductor layer, the second gate electrode includes a light-transmitting material and overlaps with the light-receiving portion, and the first gate electrode is electrically connected to the source electrode or the drain electrode is provided.

Abstract: A photoelectric conversion element including a first gate electrode, a first gate insulating layer, a crystalline semiconductor layer, an amorphous semiconductor layer, an impurity semiconductor layer, a source electrode and a drain electrode in contact with the impurity semiconductor layer, a second gate insulating layer covering a region between the source electrode and the drain electrode, and a second gate electrode over the second gate insulating layer. In the photoelectric conversion element, a light-receiving portion is provided in the region between the source electrode and the drain electrode, the first gate electrode includes a light-shielding material and overlaps with the entire surface of the crystalline semiconductor layer and the amorphous semiconductor layer, the second gate electrode includes a light-transmitting material and overlaps with the light-receiving portion, and the first gate electrode is electrically connected to the source electrode or the drain electrode is provided.

Abstract: A photoelectric conversion element includes a first conductive layer over a substrate; a first insulating layer covering the first conductive layer; a first semiconductor layer over the first insulating layer; a second conductive layer formed over the first semiconductor layer; an impurity semiconductor layer over the second semiconductor layer; a second conductive layer over the impurity semiconductor layer; a second insulating layer covering the first semiconductor layer and the second conductive layer; and a light-transmitting third conductive layer over the second insulating layer. A first opening and a second opening are formed in the second insulating layer. In the first opening, the first semiconductor layer is connected to the third conductive layer. In the second opening, the first conductive layer is connected to the third conductive layer. In the first opening, a light-receiving portion surrounded by an electrode formed of the second conductive layer is provided.

Abstract: A photoelectric conversion, element including a first gate electrode, a first gate insulating layer, a crystalline semiconductor layer an amorphous semiconductor layer, an impurity semiconductor layer, a source electrode and a drain electrode in contact with the impurity semiconductor layer, a second gate insulating layer covering; a region between the source electrode and the drain electrode, and a second gate electrode over the second gate insulating layer. In the photoelectric conversion element, a Sight-receiving portion is provided in the region between the source electrode and the drain electrode, the first gate electrode includes a light-shielding material and overlaps with the entire surface of the crystalline semiconductor layer and the amorphous semiconductor layer, the second gate electrode includes a light-transmitting material and overlaps with, the light-receiving portion, and the first gate electrode is electrically connected to the source electrode or the drain electrode is provided.

Abstract: A photoelectric conversion element includes a first conductive layer over a substrate; a first insulating layer covering the first conductive layer; a first semiconductor layer over the first insulating layer; a second conductive layer formed over the first semiconductor layer; an impurity semiconductor layer over the second semiconductor layer; a second conductive layer over the impurity semiconductor layer; a second insulating layer covering the first semiconductor layer and the second conductive layer; and a light-transmitting third conductive layer over the second insulating layer. A first opening and a second opening are formed in the second insulating layer. In the first opening, the first semiconductor layer is connected to the third conductive layer. In the second opening, the first conductive layer is connected to the third conductive layer. In the first opening, a light-receiving portion surrounded by an electrode formed of the second conductive layer is provided.