Patents by Inventor Tsuguo Fududa

Tsuguo Fududa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gallate single crystal, process for producing the same, piezoelectric device for high-temperature use and piezoelectric sensor for high-temperature use
    Patent number: 7947192
    Abstract: A material for high-temperature region piezoelectric device that can be used at a high temperature zone exceeding 400 DEG C, having a resistivity whose temperature dependence is slight. The material is characterized by having a composition selected from the group consisting of RE3Ga5?xAlxSiO14 (wherein RE represents a rare earth, and 0<X<5), RE3Ta0.5Ga5.5?xAlxO14 (wherein RE represents a rare earth, and 0<X<5.5) and RE3Nb0.5Ga5.5?xAlxO14 (wherein RE represents a rare earth, and 0<x<5.5) and by exhibiting a 100 to 600° C. resistivity change of ?104. The process for producing the same is characterized by growing a single crystal from a solution in an atmosphere of inert gas containing an oxidative gas and thereafter cooling the single crystal in an inert gas whose oxidative gas molar fraction (z) is lower than in the above growing step.
    Type: Grant
    Filed: March 30, 2006
    Date of Patent: May 24, 2011
    Assignee: Fukuda Crystal Laboratory
    Inventors: Tsuguo Fududa, Akira Yoshikawa, Hiroki Sato
  • Gallate Single Crystal, Process For Producing The Same, Piezoelectric Device For High-Temperature Use And Piezoelectric Sensor For High-Temperature Use
    Publication number: 20080081013
    Abstract: A material for high-temperature region piezoelectric device that can be used at a high temperature zone exceeding 400 DEG C., having a resistivity whose temperature dependence is slight. The material is characterized by having a composition selected from the group consisting of RE3Ga5?xAlxSiO14 (wherein RE represents a rare earth, and 0<x<5), RE3Ta0.5Ga5.5?xAlxO14 (wherein RE represents a rare earth, and 0<X<5.5) and RE3Nb0.5Ga5.5?xAlxO14 (wherein RE represents a rare earth, and 0<x<5.5) and by exhibiting a 100 to 600° C. resistivity change of ?104. The process for producing the same is characterized by growing a single crystal from a solution in an atmosphere of inert gas containing an oxidative gas and thereafter cooling the single crystal in an inert gas whose oxidative gas molar fraction (z) is lower than in the above growing step.
    Type: Application
    Filed: March 30, 2006
    Publication date: April 3, 2008
    Applicant: FUKUDA CRYSTAL LABORATORY
    Inventors: Tsuguo Fududa, Akira Yoshikawa, Hiroki Sato