Abstract: A semiconductor light emitting device includes a semiconductor light emitting element (1), a resin stem (10) having a recess (7), and a projection (9) made of a light-transmissive thermosetting resin on the resin stem so as to cover the entire upper surface and continuous upper part of side surfaces of the resin stem to a predetermined depth. The recess is filled with a light-transmissive resin encapsulating element (5) to embed the semiconductor light emitting element, one end of an externally extended first lead (21) and one end of an externally extended second lead (22) electrically connected to first and second electrodes of the semiconductor light emitting element, and a bonding wires (4) connecting the second lead to the second electrode. The projection functions as a lens and is made by hardening a fluid-state resin in an encapsulating case mold.

Abstract: A semiconductor light emitting device includes a semiconductor light emitting element (1), a resin stem (10) having a recess (7), and a projection (9) made of a light-transmissive thermosetting resin on the resin stem so as to cover the entire upper surface and continuous upper part of side surfaces of the resin stem to a predetermined depth. The recess is filled with a light-transmissive resin encapsulating element (5) to embed the semiconductor light emitting element, one end of an externally extended first lead (21) and one end of an externally extended second lead (22) electrically connected to first and second electrodes of the semiconductor light emitting element, and a bonding wires (4) connecting the second lead to the second electrode. The projection functions as a lens and is made by hardening a fluid-state resin in an encapsulating case mold.

Abstract: A semiconductor light emitting device has a structure of stacked semiconductor layers including a double hetero junction, and a electrode having a plurality of stacked metal layers exhibiting a light transmitting property and an oxygen rich layer exhibiting the light transmitting property and interposed between said metal layers. The oxygen rich layer is preferably oxide layer. Such structure exhibits high light emission.

Abstract: The present invention relates to a linear multi-anode photomultiplier or electron multiplier on which a plurality of light beams to be measured or energy beams of electrons, ions and so forth are incident one-dimensionally. The object of the present invention is to prevent crosstalk between dynode arrays caused by leaking electrons. A transmission type photomultiplier is characterized in that the direction of secondary electron emission of the first-stage dynode of each dynode array is set in the opposite direction at 180.degree. from that of an adjacent dynode array. Then, adjacent dynode arrays will not oppose each other but are shifted from each other at a predetermined distance in the lateral direction. Accordingly, even if electrons leak from a gap between dynodes of a certain dynode array, the leaking electrons will not enter the adjacent dynode array, thereby preventing crosstalk.

Abstract: Receiving sections for receiving light emitting and light receiving elements are formed in a housing. The axes of the light emitting and light receiving elements which are inserted into the receiving sections are optically coupled at a preset angle. Further, light transmission windows are formed in the housing in front of the light emitting and light receiving elements which are inserted into the receiving sections, and the opening area of the light transmission window on the light receiving element side is made smaller than that of the light transmission window on the light emitting element side.