Patents by Inventor Tsukada Kazunori

Tsukada Kazunori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for improved gate oxide uniformity with reducing system contaminants
    Patent number: 6806144
    Abstract: A method and apparatus for improving a uniformity of a thermally grown silicon dioxide layer including thermally growing a layer over the exposed silicon portions including silicon dioxide according to a thermal oxide growing process; exposing the gas reactant feed lines to reactant gases during at least one of the step of thermally growing a layer and a cleaning process following the step of thermally growing a layer; and, purging the gas flow pathways to bypass the reactor chamber with at least one purge gas source including an inert gas to remove residual reactant gas contaminants to improve a subsequently thermally grown silicon dioxide layer.
    Type: Grant
    Filed: August 13, 2002
    Date of Patent: October 19, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Pu-Fan Chen, Chao-Po Lu, Hsi-Shen Chuang, Yi-Jen Chen, Chin-Tsai Chen, Tsukada Kazunori
  • Method and apparatus for improved gate oxide uniformity with reducing system contaminants
    Publication number: 20040031440
    Abstract: A method and apparatus for improving a uniformity of a thermally grown silicon dioxide layer including thermally growing a layer over the exposed silicon portions including silicon dioxide according to a thermal oxide growing process; exposing the gas reactant feed lines to reactant gases during at least one of the step of thermally growing a layer and a cleaning process following the step of thermally growing a layer; and, purging the gas flow pathways to bypass the reactor chamber with at least one purge gas source including an inert gas to remove residual reactant gas contaminants to improve a subsequently thermally grown silicon dioxide layer.
    Type: Application
    Filed: August 13, 2002
    Publication date: February 19, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Pu-Fan Chen, Chao-Po Lu, Hsi-Shen Chuang, Yi-Jen Chen, Chin-Tsai Chen, Tsukada Kazunori