Abstract: Provided are a latch circuit and a flip-flop circuit each having more excellent tolerance to single event upset (SEU). The single event upset (SEU)-tolerant latch circuit of the present invention is configured such that three transistors for redundancy are added to each of eight transistors constituting a conventional DICE latch circuit, at respective positions consisting of a serial position, a parallel position and a parallel-serial position so as to form a four-transistor circuit in which a serially duplicated circuit is duplicated in parallel, and each of a first data input part and a second data input part is also made dually redundant.

Abstract: Provided are a latch circuit and a flip-flop circuit each having more excellent tolerance to single event upset (SEU). The single event upset (SEU)-tolerant latch circuit of the present invention is configured such that three transistors for redundancy are added to each of eight transistors constituting a conventional DICE latch circuit, at respective positions consisting of a serial position, a parallel position and a parallel-serial position so as to form a four-transistor circuit in which a serially duplicated circuit is duplicated in parallel, and each of a first data input part and a second data input part is also made dually redundant.

Abstract: A storage structure is configured that can be assembled more easily. The storage structure is provided with a lid capable of being opened and closed. The lid is configured to swing about a swing axis from an opened state to a closed state. The lid has a center of gravity located on a far portion of the lid relative to the swing axis such that swinging movement of the lid to the opened state occurs due to a weight distribution of the lid itself relative to the swing axis. Thus, the lid swings from the closed state to the opened state with the center of gravity of the lid having being vertically disposed below the swing axis when the lid is in the closed state.