Abstract: A first reference current having a first temperature characteristic is generated by a first reference current generating circuit (1) while a second reference current having a second temperature characteristic is generated by a second reference current generating circuit (2). A temperature characteristic multiplying circuit (3) amplifies the first reference current by using a current difference between the first and second reference currents to generate a reference current having a third temperature characteristic higher than the first temperature characteristic, so that a ring oscillator (X) determines a refresh period on the basis of the reference current.

Abstract: A semiconductor memory device such as a pseudo SRAM or the like is provided with a memory cell array being refreshed in accordance with a refresh timing signal having a predetermined refresh period and generated by a refresh timing signal generator circuit. A selector selects a block to hold data in the memory cell array divided into a plurality of blocks in accordance with a predetermined command signal, and a signal generator changes the refresh period according to a number of blocks selected by said selecting means, and generates a refresh timing signal having a changed refresh period and outputs a generated refresh signal.

Abstract: A semiconductor memory device such as a pseudo SRAM or the like is provided with a memory cell array being refreshed in accordance with a refresh timing signal having a predetermined refresh period and generated by a refresh timing signal generator circuit. A selector selects a block to hold data in the memory cell array divided into a plurality of blocks in accordance with a predetermined command signal, and a signal generator changes the refresh period according to a number of blocks selected by said selecting means, and generates a refresh timing signal having a changed refresh period and outputs a generated refresh signal.

Abstract: A first reference current having a first temperature characteristic is generated by a first reference current generating circuit (1) while a second reference current having a second temperature characteristic is generated by a second reference current generating circuit (2). A temperature characteristic multiplying circuit (3) amplifies the first reference current by using a current difference between the first and second reference currents to generate a reference current having a third temperature characteristic higher than the first temperature characteristic, so that a ring oscillator (X) determines a refresh period on the basis of the reference current.

Abstract: A semiconductor integrated circuit has an internal power supply circuit which includes a differential amplifier, a driver transistor having its gate connected to an output terminal of the differential amplifier and is connected between an external power supply node and an internal power supply node, four transistors connected in parallel between the internal power supply node and a non-inversion input terminal of the differential amplifier, a first control circuit provided corresponding to two of the four transistors, and a second control circuit provided corresponding to remaining two of the transistors. The first control circuit includes a first fuse and a first signal generating circuit. The first signal generating circuit outputs a low level first control signal to the gate of the corresponding transistor when a first fuse is disconnected, and outputs a high level first control signal to the gate of the corresponding transistor when the first fuse is connected.

Abstract: A substrate bias generating circuit includes V.sub.BB generating circuits and a switching circuit. The switching circuit, in the standby period, applies an internal power supply voltage applied by an internal voltage down converting circuit to the V.sub.BB generating circuits. The switching circuit, in the active period, applies an external power supply voltage to the V.sub.BB generating circuits.