Abstract: There is provided a configuration that includes: an intake damper and an intake fan configured to communicate with an intake port that sucks air to a transfer chamber connected to a process chamber; a valve of an inert gas introduction pipe configured to supply an inert gas to the transfer chamber; an exhaust fan and a first exhaust valve installed in the transfer chamber; a switch configured to select one of an atmospheric mode in which an atmosphere of the transfer chamber is an air atmosphere and a purge mode in which the atmosphere of the transfer chamber is an inert gas atmosphere; and a controller configured to control each of the intake damper, the intake fan, the valve of the inert gas introduction pipe, the exhaust fan, and the first exhaust valve to execute one of the atmospheric mode and the purge mode.

Abstract: There is provided a configuration that includes: an intake damper and an intake fan configured to communicate with an intake port that sucks air to a transfer chamber connected to a process chamber; a valve of an inert gas introduction pipe configured to supply an inert gas to the transfer chamber; an exhaust fan and a first exhaust valve installed in the transfer chamber; a switch configured to select one of an atmospheric mode in which an atmosphere of the transfer chamber is an air atmosphere and a purge mode in which the atmosphere of the transfer chamber is an inert gas atmosphere; and a controller configured to control each of the intake damper, the intake fan, the valve of the inert gas introduction pipe, the exhaust fan, and the first exhaust valve to execute one of the atmospheric mode and the purge mode.

Abstract: A substrate processing apparatus includes first and second process chambers; a mounting section on which a housing vessel that houses the substrate is mounted; a vacuum transfer chamber that has a vacuum transfer machine to transfer the substrate under a negative pressure; and an atmospheric transfer chamber that has an atmospheric transfer machine that transfers the substrate under an atmospheric pressure. Timing for the atmospheric transfer chamber to take out the substrate from the housing vessel is based on a recipe remaining time, which is a remaining time of substrate processing, and an approach time, which is a time from when the substrate is taken out from the housing vessel till when the substrate is mounted to the vacuum transfer machine.

Abstract: A substrate processing apparatus includes first and second process chambers; a mounting section on which a housing vessel that houses the substrate is mounted; a vacuum transfer chamber that has a vacuum transfer machine to transfer the substrate under a negative pressure; and an atmospheric transfer chamber that has an atmospheric transfer machine that transfers the substrate under an atmospheric pressure. Timing for the atmospheric transfer chamber to take out the substrate from the housing vessel is based on a recipe remaining time, which is a remaining time of substrate processing, and an approach time, which is a time from when the substrate is taken out from the housing vessel till when the substrate is mounted to the vacuum transfer machine.

Abstract: It is intended to provide a substrate processing apparatus capable of reliably informing a running state of the apparatus. The substrate processing apparatus having a signal indicator for indicating the running state, including a signal indicator capable of setting at least one operation condition under which the signal indicator operates as well as of operating under anyone of a plurality of operation conditions and a display unit capable of displaying that a cause of the operation is anyone of the operation conditions during the operation of the signal indicator.

Abstract: Provided are a substrate processing apparatus, a semiconductor device manufacturing method, and a temperature controlling method, which are adapted to improve equipment operational rate. A calculation parameter computing unit computes a calculation parameter using at least a first calculation parameter correction value determined by a first calculation parameter setting unit based on an accumulated film thickness on a reaction vessel, a second calculation parameter correction value determined by a second calculation parameter setting unit based on an accumulated film thickness on a filler wafer, and a third calculation parameter correction value determined by a third calculation parameter setting unit based on the number of filler wafers.

Abstract: It is intended to provide a substrate processing apparatus capable of reliably informing a running state of the apparatus. The substrate processing apparatus 100 having a signal indicator for indicating the running state, including a signal indicator 306 capable of setting at least one operation condition under which the signal indicator 306 operates as well as of operating under any one of a plurality of operation conditions and a display unit 314 capable of displaying that a cause of the operation is any one of the operation conditions during the operation of the signal indicator 306.

Abstract: Provided are a substrate processing apparatus, a semiconductor device manufacturing method, and a temperature controlling method, which are adapted to improve equipment operational rate. A calculation parameter computing unit computes a calculation parameter using at least a first calculation parameter correction value determined by a first calculation parameter setting unit based on an accumulated film thickness on a reaction vessel, a second calculation parameter correction value determined by a second calculation parameter setting unit based on an accumulated film thickness on a filler wafer, and a third calculation parameter correction value determined by a third calculation parameter setting unit based on the number of filler wafers.

Abstract: It is intended to provide a substrate processing apparatus capable of reliably informing a running state of the apparatus. The substrate processing apparatus 100 having a signal indicator for indicating the running state, including a signal indicator 306 capable of setting at least one operation condition under which the signal indicator 306 operates as well as of operating under any one of a plurality of operation conditions and a display unit 314 capable of displaying that a cause of the operation is any one of the operation conditions during the operation of the signal indicator 306.

Abstract: An actuator for a driving mode shifting device. A motor having a motor shaft which outputs rotational torque according to electrified electric current. An output member, which is moved by the rotational torque, shifts drive modes according to positions thereof. A torque transmitting mechanism transmits the rotational torque from the motor shaft to the output member. A control mechanism selects drive modes and controls the electric current to energize the motor so as to provide the selected drive mode. A one-way rotational mechanism is disposed between the motor shaft and the torque transmitting mechanism for preventing the motor shaft rotating against the motor. A rotational torque absorption mechanism is disposed between the one-way rotational mechanism and the torque transmitting mechanism for absorbing the rotational torque, when the motor shaft is rotated and the output member can not be moved. A rotational angle detecting means detects the rotational angle of the motor shaft.

Abstract: In a process for thermally cracking a low-quality feed stock containing a considerable proportion of heavy fractions such as high-boiling fractions, and evaporation residual oil, and a system used therefor, in which the low-quality feed stock is withdrawn from the preheater of the thermal cracking furnace to separate and remove a required proportion of said heavy fractions and thereafter returned to subject the feed stock to further preheating and thermal cracking. The low-quality feed stock thermally cracked has a predetermined proportion of the heavy fractions removed, and coking in the thermal cracking system at various lines is avoided from occurring.

Abstract: The invention provides a method for removing mercury from a liquid hydrocarbon feed material by (a) removing those components having a higher molecular weight than the desired hydrocarbon from the feed material, (b) removing water from the feed material, and thereafter (c) removing mercury from the feed material. Mercury can be removed to an extremely low concentration of 0.001 ppm or lower from a wide variety of liquid hydrocarbon feed materials containing either a relatively large amount or a trace amount of mercury.