Patents by Inventor Tsukasa Itani
Tsukasa Itani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190391654Abstract: A tactile sensation providing apparatus includes: a housing; N (N is an integer equal to or greater than 2) vibrators attached to the housing, having resonance frequencies different from each other and configured to vibrate the housing; and a drive controller configured to simultaneously drive the N vibrators with N drive signals that vibrate the N respective vibrators in a resonance state, wherein the N drive signals cause the housing to generate reciprocating vibration by simultaneously driving the N respective vibrators, the reciprocating vibration having different speeds in a first direction and a second direction opposite to the first direction.Type: ApplicationFiled: September 4, 2019Publication date: December 26, 2019Applicant: FUJITSU LIMITEDInventors: KIYOSHI TANINAKA, Tsukasa Itani, Yasuhiro Endo
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Patent number: 8513805Abstract: A technology that improves the reliability of a semiconductor device and realizes a high performance by a laminated structure that has enough barrier properties against copper, reduces the wire delay time by lowering the capacitance between wirings and improves the adhesion between wirings is provided. There is a semiconductor device having: a first copper wiring layer, a first barrier layer on the first copper wiring layer, a silicon oxide series porous insulating layer on the first barrier layer, a second barrier layer on the silicon oxide series porous insulating layer, and a second copper wiring layer on the second barrier layer, wherein at least one of the first barrier layer and the second barrier layer consists of an amorphous carbon film, wherein a silicon series insulating layer is directly connected between the amorphous carbon film and any of the first copper wiring layer or the second copper wiring layer.Type: GrantFiled: February 27, 2008Date of Patent: August 20, 2013Assignee: Fujitsu LimitedInventor: Tsukasa Itani
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Patent number: 8018683Abstract: A head slider that can furnish excellent head flying stability and a magnetic recording device having excellent head flying stability are provided. For the head slider, the protective layer is composed of two layers, that is, a lower layer and an upper layer thereon; the ionization potential of the lower layer is made to be smaller than that of the upper layer; and the surface free energy of the upper layer is made to be 45 mN/m or less.Type: GrantFiled: November 21, 2007Date of Patent: September 13, 2011Assignee: Fujitsu LimitedInventors: Norikazu Nakamura, Hiroshi Chiba, Yoshiharu Kasamatsu, Takayuki Musashi, Yukiko Oshikubo, Tsukasa Itani
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Patent number: 7683488Abstract: A semiconductor device is provided having an insulating layer structure with a low dielectric constant and excellent barrier properties against copper. This semiconductor device has a copper wiring layer and includes at least one layered structure having a copper wiring line, an amorphous carbon film with a density of 2.4 g/cm3 or more, a porous silicon oxide insulating material layer, an amorphous carbon film with a density of 2.4 g/cm3 or more and a copper wiring line in that order.Type: GrantFiled: August 20, 2007Date of Patent: March 23, 2010Assignee: Fujitsu LimitedInventor: Tsukasa Itani
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Patent number: 7514163Abstract: A magnetic recording medium having excellent durability and corrosion resistance as well as a magnetic recording device equipped with the magnetic recording medium is provided. The protective layer of the magnetic recording medium is composed of two layers, that is, a lower layer contacting with the magnetic layer and an upper layer on the lower layer. The internal stress of the lower layer is made smaller than that of the upper layer, and the surface free energy of the lower layer is made smaller than that of the upper layer.Type: GrantFiled: November 4, 2004Date of Patent: April 7, 2009Assignee: Fujitsu LimitedInventors: Norikazu Nakamura, Tsukasa Itani, Yukiko Oshikubo, Shinichi Nakayama, Takashi Toyoguchi
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Publication number: 20080272491Abstract: A technology that improves the reliability of a semiconductor device and realizes a high performance by a laminated structure that has enough barrier properties against copper, reduces the wire delay time by lowering the capacitance between wirings and improves the adhesion between wirings is provided. There is a semiconductor device having: a first copper wiring layer, a first barrier layer on the first copper wiring layer, a silicon oxide series porous insulating layer on the first barrier layer, a second barrier layer on the silicon oxide series porous insulating layer, and a second copper wiring layer on the second barrier layer, wherein at least one of the first barrier layer and the second barrier layer consists of an amorphous carbon film, wherein a silicon oxide series insulating layer is directly connected between the amorphous carbon film and any of the first copper wiring layer or the second copper wiring layer.Type: ApplicationFiled: February 27, 2008Publication date: November 6, 2008Applicant: FUJITSU LIMITEDInventor: Tsukasa ITANI
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Publication number: 20080259497Abstract: A magnetic recording medium and head slider that can furnish excellent head flying stability, a magnetic recording device having excellent head flying stability, and a method for manufacturing, in a short time, a magnetic recording medium and head slider that can furnish such excellent head flying stability, are provided. For both of the magnetic recording medium and head slider, the protective layers are each composed of two layers, that is, a lower layer and an upper layer thereon; the ionization potential of the lower layer is made to be smaller than that of the upper layer; and the surface free energy of the upper layer is made to be 45 mN/m or less.Type: ApplicationFiled: November 21, 2007Publication date: October 23, 2008Applicant: Fujitsu LimitedInventors: Norikazu Nakamura, Hiroshi Chiba, Yoshiharu Kasamatsu, Takayuki Musashi, Yukiko Oshikubo, Tsukasa Itani
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Publication number: 20080217783Abstract: A semiconductor device is provided having an insulating layer structure with a low dielectric constant and excellent barrier properties against copper. This semiconductor device has a copper wiring layer and includes at least one layered structure having a copper wiring line, an amorphous carbon film with a density of 2.4 g/cm3 or more, a porous silicon oxide insulating material layer, an amorphous carbon film with a density of 2.4 g/cm3 or more and a copper wiring line in that order.Type: ApplicationFiled: August 20, 2007Publication date: September 11, 2008Applicant: FUJITSU LIMITEDInventor: Tsukasa Itani
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Publication number: 20080081220Abstract: A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.Type: ApplicationFiled: November 15, 2007Publication date: April 3, 2008Applicant: Fujitsu LimitedInventors: Keiji Watanabe, Hiroshi Chiba, Eishin Yamakawa, Tsukasa Itani, Norikazu Nakamura, Shoichi Suda, Masayuki Takeda, Kazuaki Kurihara
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Patent number: 7335701Abstract: A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.Type: GrantFiled: June 27, 2006Date of Patent: February 26, 2008Assignee: Fujitsu LimitedInventors: Keiji Watanabe, Hiroshi Chiba, Eishin Yamakawa, Tsukasa Itani, Norikazu Nakamura, Shoichi Suda, Masayuki Takeda, Kazuaki Kurihara
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Patent number: 7317594Abstract: A magnetic recording medium and head slider that can furnish excellent head flying stability, a magnetic recording device having excellent head flying stability, and a method for manufacturing, in a short time, a magnetic recording medium and head slider that can furnish such excellent head flying stability, are provided. For both of the magnetic recording medium and head slider, the protective layers are each composed of two layers, that is, a lower layer and an upper layer thereon; the ionization potential of the lower layer is made to be smaller than that of the upper layer; and the surface free energy of the upper layer is made to be 45 mN/m or less.Type: GrantFiled: January 31, 2005Date of Patent: January 8, 2008Assignee: Fujitsu LimitedInventors: Norikazu Nakamura, Hiroshi Chiba, Yoshiharu Kasamatsu, Takayuki Musashi, Yukiko Oshikubo, Tsukasa Itani
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Publication number: 20070218680Abstract: The method for fabricating a semiconductor device comprises the step of forming an interconnection trench 38 in an inter-layer insulation film 34, the step of forming an interconnection layer 44 of Cu as the main material in the interconnection trench 38, and the step of performing cloth-rubbing processing of rubbing a cloth 2 containing pure water with ammonia and hydrogen solved in on the surface of the interconnection layer 44 buried in the interconnection trench 38.Type: ApplicationFiled: June 27, 2006Publication date: September 20, 2007Applicant: FUJITSU LIMITEDInventors: Tsukasa Itani, Makoto Sasaki
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Publication number: 20070148953Abstract: The method comprises the step of forming an interconnection trench 38 in an inter-layer insulation film 34, the step of forming an interconnection layer 44 of Cu as the main material in the interconnection trench 38, and the step of performing nitrogen-two-fluid processing of concurrently spraying pure water with ammonia and hydrogen solved in and nitrogen gas on the surface of the interconnection layer 44 buried in the interconnection trench 38.Type: ApplicationFiled: June 20, 2006Publication date: June 28, 2007Applicant: FUJITSU LIMITEDInventors: Tsukasa Itani, Makoto Sasaki, Yukio Takigawa
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Publication number: 20070137672Abstract: To provide a wafer cleaning method capable of restricting breakage of fine structures disposed on a wafer, and a spin cleaning apparatus enabling such cleaning. The spin cleaning apparatus injects a cleaning liquid on a wafer surface while moving a nozzle, and at the same time, with an ultrasonic wave generated inside the nozzle, irradiates a cleaning liquid collision spot, thereby cleaning the wafer surface. The above apparatus includes at least one of the following functions: (1) a function of varying the rotation frequency of the wafer; (2) a function of varying the traveling speed of the nozzle in the direction parallel to the wafer; (3) a function of varying the output of the ultrasonic wave; and (4) a function of varying the distance between the nozzle and the cleaning liquid collision spot, all corresponding to the position of the cleaning liquid collision spot on the wafer.Type: ApplicationFiled: March 31, 2006Publication date: June 21, 2007Applicant: FUJITSU LIMITEDInventors: Makoto Sasaki, Tsukasa Itani
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Publication number: 20060241247Abstract: A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.Type: ApplicationFiled: June 27, 2006Publication date: October 26, 2006Inventors: Keiji Watanabe, Hiroshi Chiba, Eishin Yamakawa, Tsukasa Itani, Norikazu Nakamura, Shoichi Suda, Masayuki Takeda, Kazuaki Kurihara
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Patent number: 7081277Abstract: A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.Type: GrantFiled: October 19, 2000Date of Patent: July 25, 2006Assignee: Fujitsu LimitedInventors: Keiji Watanabe, Hiroshi Chiba, Eishin Yamakawa, Tsukasa Itani, Norikazu Nakamura, Shoichi Suda, Masayuki Takeda, Kazuaki Kurihara
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Publication number: 20060044691Abstract: A magnetic recording medium and head slider that can furnish excellent head flying stability, a magnetic recording device having excellent head flying stability, and a method for manufacturing, in a short time, a magnetic recording medium and head slider that can furnish such excellent head flying stability, are provided. For both of the magnetic recording medium and head slider, the protective layers are each composed of two layers, that is, a lower layer and an upper layer thereon; the ionization potential of the lower layer is made to be smaller than that of the upper layer; and the surface free energy of the upper layer is made to be 45 mN/m or less.Type: ApplicationFiled: January 31, 2005Publication date: March 2, 2006Inventors: Norikazu Nakamura, Hiroshi Chiba, Yoshiharu Kasamatsu, Takayuki Musashi, Yukiko Oshikubo, Tsukasa Itani
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Publication number: 20050271902Abstract: A magnetic recording medium having excellent durability and corrosion resistance as well as a magnetic recording device equipped with the magnetic recording medium is provided. The protective layer of the magnetic recording medium is composed of two layers, that is, a lower layer contacting with the magnetic layer and an upper layer on the lower layer. The internal stress of the lower layer is made smaller than that of the upper layer, and the surface free energy of the lower layer is made smaller than that of the upper layer.Type: ApplicationFiled: November 4, 2004Publication date: December 8, 2005Inventors: Norikazu Nakamura, Tsukasa Itani, Yukiko Oshikubo, Shinichi Nakayama, Takashi Toyoguchi
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Patent number: 6248400Abstract: A DC plasma jet CVD process having a high film deposition rate is employed. A material having low adhesion with diamond is used for a substrate. A diamond film automatically peels from the substrate at the time of cooling. Gas is recycled because gas utilization efficiency is low. In this case, deposition of carbon can be prevented by setting a gas flow velocity to at least 5 m/s in the proximity of an anodic point.Type: GrantFiled: August 18, 1997Date of Patent: June 19, 2001Assignee: Fujitsu LimitedInventors: Kazuaki Kurihara, Kenichi Sasaki, Tsukasa Itani, Shinobu Akashi
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Patent number: 5565249Abstract: A process for gas phase synthesis of diamond using a DC plasma jet where a plasma jet generated by DC arc discharge using a DC plasma torch is made to strike a substrate and grow diamond on the substrate, wherein use is made of a plurality of plasma torch anodes, these are arranged coaxially in a telescoped structure, a magnetic field is applied to these in accordance with need to cause the arc to rotate or the electrode is rotated so as to perform gas phase synthesis of diamond.Type: GrantFiled: May 7, 1993Date of Patent: October 15, 1996Assignee: Fujitsu LimitedInventors: Kazuaki Kurihara, Kenichi Sasaki, Tsukasa Itani, Motonobu Kawarada