Abstract: The present invention provides a novel copolymer available for a drug delivery technique. More particularly, a novel copolymer for a drug delivery carrier targeting a tumor is provided. The present invention relates to a copolymer comprising structural units represented by the following formulas (A), (B), and (C): wherein R1, R2, and R3 are the same or different and represent a hydrogen atom or a C1-3 alkyl group, R4 represents a C1-3 alkyl group, R5 represents a hydrogen atom, a C1-18 alkyl group, a 3- to 8-membered cycloalkyl group optionally having a substituent, an adamantyl group, a C6-18 aryl group optionally having a substituent, or a 5- to 10-membered heteroaryl group optionally having a substituent, X1, X2, and X3 are the same or different and represent an oxygen atom, a sulfur atom, or N—R7, R6 represents a hydrogen atom, a leaving group, or a linker, R7 represents a hydrogen atom or a C1-3 alkyl group, m represents an integer of 1 to 100, and n represents an integer of 0 to 3.

Abstract: According to one embodiment, there is provided a motor control device including a detection circuit, a control circuit and a drive circuit. The detection circuit detects, in a direct current motor with a first coil and second coil, a first parameter related to an induced voltage generated in the first coil and a second parameter related to an induced voltage generated in the second coil. The control circuit changes, according to a difference between the first parameter and the second parameter, at least one of a first amplitude control value of a current of the first coil and a second amplitude control value of a current of the second coil. The drive circuit drives, according to the changed amplitude control value, the first coil and the second coil, respectively.

Abstract: According to one embodiment, there is provided a motor control device including a detection circuit, a control circuit and a drive circuit. The detection circuit detects, in a direct current motor with a first coil and second coil, a first parameter related to an induced voltage generated in the first coil and a second parameter related to an induced voltage generated in the second coil. The control circuit changes, according to a difference between the first parameter and the second parameter, at least one of a first amplitude control value of a current of the first coil and a second amplitude control value of a current of the second coil. The drive circuit drives, according to the changed amplitude control value, the first coil and the second coil, respectively.

Abstract: The present disclosure relates to a solid-state image sensing device capable of restricting an occurrence of a dark current and a method for manufacturing the same, and an electronic device. A solid-state image sensing device includes a FD part formed on a P-type semiconductor substrate by implanting an N-type impurity, a high-dielectric insulative film laminated on at least the FD part, and a contact electrode connected to the FD part in a connection structure via the high-dielectric insulative film. For example, the high-dielectric insulative film is formed by use of a material which reduces the schottky barrier height in a connection part between the FD part and the electrode in a single layer or in a plurality of layers. The present technology is applicable to CMOS image sensors, for example.

Abstract: The present disclosure relates to a solid-state image sensing device capable of restricting an occurrence of a dark current and a method for manufacturing the same, and an electronic device. A solid-state image sensing device includes a FD part formed on a P-type semiconductor substrate by implanting an N-type impurity, a high-dielectric insulative film laminated on at least the FD part, and a contact electrode connected to the FD part in a connection structure via the high-dielectric insulative film. For example, the high-dielectric insulative film is formed by use of a material which reduces the schottky barrier height in a connection part between the FD part and the electrode in a single layer or in a plurality of layers. The present technology is applicable to CMOS image sensors, for example.

Abstract: The DC-DC converter includes a mask controlling circuit that outputs an overcurrent detection mask signal that prescribes a mask period in which the overcurrent detection result signal is masked. The DC-DC converter includes a mask adjusting circuit that adjusts a length of the mask period according to the power supply voltage. The DC-DC converter includes an operation circuit that performs an operation of the overcurrent detection result signal and the overcurrent detection mask signal and outputs an overcurrent controlling signal with the overcurrent detection result signal being masked in the mask period.

Abstract: The DC-DC converter includes a mask controlling circuit that outputs an overcurrent detection mask signal that prescribes a mask period in which the overcurrent detection result signal is masked. The DC-DC converter includes a mask adjusting circuit that adjusts a length of the mask period according to the power supply voltage. The DC-DC converter includes an operation circuit that performs an operation of the overcurrent detection result signal and the overcurrent detection mask signal and outputs an overcurrent controlling signal with the overcurrent detection result signal being masked in the mask period.