Patents by Inventor Tsukasa Tada
Tsukasa Tada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10018908Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.Type: GrantFiled: January 23, 2017Date of Patent: July 10, 2018Assignee: TOSHIBA MEMORY CORPORATIONInventors: Naomi Shida, Kenji Todori, Shigehiko Mori, Reiko Yoshimura, Hiroyuki Kashiwagi, Ikuo Yoneda, Tsukasa Tada
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Publication number: 20170131630Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.Type: ApplicationFiled: January 23, 2017Publication date: May 11, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Naomi SHIDA, Kenji TODORI, Shigehiko MORI, Reiko YOSHIMURA, Hiroyuki KASHIWAGI, lkuo YONEDA, Tsukasa TADA
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Patent number: 9588418Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.Type: GrantFiled: December 16, 2014Date of Patent: March 7, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naomi Shida, Kenji Todori, Shigehiko Mori, Reiko Yoshimura, Hiroyuki Kashiwagi, Ikuo Yoneda, Tsukasa Tada
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Patent number: 9550322Abstract: A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.Type: GrantFiled: April 10, 2015Date of Patent: January 24, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naomi Shida, Kenji Todori, Shigehiko Mori, Ko Yamada, Masakazu Yamagiwa, Reiko Yoshimura, Yasuyuki Hotta, Tsukasa Tada, Hiroyuki Kashiwagi, Ikuo Yoneda
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Patent number: 9548373Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecular layer, which is provided between the semiconductor layer and the control gate electrode, and has organic molecules including a molecular structure described by a molecular formula (1).Type: GrantFiled: September 1, 2015Date of Patent: January 17, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Shigeki Hattori, Tsukasa Tada, Masaya Terai, Hideyuki Nishizawa, Koji Asakawa, Yoshiaki Fukuzumi
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Patent number: 9515195Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.Type: GrantFiled: May 4, 2015Date of Patent: December 6, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Hideyuki Nishizawa, Shigeki Hattori, Masaya Terai, Satoshi Mikoshiba, Koji Asakawa, Tsukasa Tada
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Patent number: 9450065Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.Type: GrantFiled: September 25, 2014Date of Patent: September 20, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Shigeki Hattori, Reika Ichihara, Masaya Terai, Hideyuki Nishizawa, Tsukasa Tada, Koji Asakawa, Hiroyuki Fuke, Satoshi Mikoshiba, Yoshiaki Fukuzumi, Hideaki Aochi
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Publication number: 20160087067Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecular layer, which is provided between the semiconductor layer and the control gate electrode, and has organic molecules including a molecular structure described by a molecular formula (1).Type: ApplicationFiled: September 1, 2015Publication date: March 24, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Shigeki HATTORI, Tsukasa TADA, Masaya TERAI, Hideyuki NISHIZAWA, Koji ASAKAWA, Yoshiaki FUKUZUMI
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Patent number: 9229161Abstract: According to one embodiment, a waveguide includes: a substrate and a member. The member covers at least a part of the substrate and has a difference in the refractive index from the substrate not less than 2. A plurality of concave parts are provided on the substrate. The concave parts are arrayed on an upper face of the substrate. At least a part of a side face of each of the concave parts includes an arc. An inner diameter of each of the concave parts is not more than 50 nm. Intervals of the neighboring concave parts are not more than the inner diameter. The member fills the concave part.Type: GrantFiled: December 28, 2012Date of Patent: January 5, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Kenji Todori, Yoshiaki Fukuzumi, Hideaki Aochi, Tsukasa Tada, Ko Yamada, Shigehiko Mori, Naomi Shida, Reiko Yoshimura
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Publication number: 20150263125Abstract: A nonvolatile semiconductor memory device includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode and having an organic molecule including a porphyrin structure with oxymetal or chlorometal at the center.Type: ApplicationFiled: March 9, 2015Publication date: September 17, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Masaya TERAI, Tsukasa TADA, Hideyuki NISHIZAWA, Shigeki HATTORI, Koji ASAKAWA
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Publication number: 20150246478Abstract: A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.Type: ApplicationFiled: April 10, 2015Publication date: September 3, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Naomi Shida, Kenji Todori, Shigehiko Mori, Ko Yamada, Masakazu Yamagiwa, Reiko Yoshimura, Yasuyuki Hotta, Tsukasa Tada, Hiroyuki Kashiwagi, Ikuo Yoneda
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Publication number: 20150236171Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.Type: ApplicationFiled: May 4, 2015Publication date: August 20, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Hideyuki NISHIZAWA, Shigeki Hattori, Masaya Terai, Satoshi Mikoshiba, Koji Asakawa, Tsukasa Tada
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Publication number: 20150228335Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups.Type: ApplicationFiled: April 24, 2015Publication date: August 13, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hideyuki NISHIZAWA, Reiko YOSHIMURA, Tsukasa TADA, Shigeki HATTORI, Masaya TERAI, Satoshi MIKOSHIBA, Koji ASAKAWA
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Publication number: 20150168825Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.Type: ApplicationFiled: December 16, 2014Publication date: June 18, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Naomi Shida, Kenji Todori, Shigehiko Mori, Reiko Yoshimura, Hiroyuki Kashiwagi, Ikuo Yoneda, Tsukasa Tada
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Patent number: 9054324Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.Type: GrantFiled: September 10, 2013Date of Patent: June 9, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Hideyuki Nishizawa, Shigeki Hattori, Masaya Terai, Satoshi Mikoshiba, Koji Asakawa, Tsukasa Tada
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Patent number: 9047941Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups.Type: GrantFiled: March 21, 2012Date of Patent: June 2, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Hideyuki Nishizawa, Reiko Yoshimura, Tsukasa Tada, Shigeki Hattori, Masaya Terai, Satoshi Mikoshiba, Koji Asakawa
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Patent number: 9029047Abstract: A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.Type: GrantFiled: March 6, 2012Date of Patent: May 12, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Naomi Shida, Kenji Todori, Shigehiko Mori, Ko Yamada, Masakazu Yamagiwa, Reiko Yoshimura, Yasuyuki Hotta, Tsukasa Tada, Hiroyuki Kashiwagi, Ikuo Yoneda
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Patent number: 9000504Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.Type: GrantFiled: December 13, 2013Date of Patent: April 7, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Shigeki Hattori, Reika Ichihara, Masaya Terai, Hideyuki Nishizawa, Tsukasa Tada, Koji Asakawa, Hiroyuki Fuke, Satoshi Mikoshiba, Yoshiaki Fukuzumi, Hideaki Aochi
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Publication number: 20150048438Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.Type: ApplicationFiled: October 16, 2014Publication date: February 19, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masaya TERAI, Shigeki Hattori, Hideyuki Nishizawa, Koji Asakawa, Tsukasa Tada
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Publication number: 20150044835Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.Type: ApplicationFiled: September 25, 2014Publication date: February 12, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Shigeki Hattori, Reika Ichihara, Masaya Terai, Hideyuki Nishizawa, Tsukasa Tada, Koji Asakawa, Hiroyuki Fuke, Satoshi Mikoshiba, Yoshiaki Fukuzumi, Hideaki Aochi