Abstract: A semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a silicon carbide semiconductor substrate of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type and connected to the first semiconductor region, a first electrode forming a Schottky-contact with the first semiconductor layer and the first semiconductor region, and a second electrode forming an ohmic contact with the second semiconductor region. The second electrode has a Ti—Al alloy layer on a surface in contact with the first electrode. The second electrode further has therein a nickel silicide layer containing titanium.

Abstract: To restrict alloy formation between a hydrogen-absorbing layer of titanium or the like and an electrode of aluminum or the like, provided is a semiconductor device. The semiconductor device may include a semiconductor substrate. The semiconductor device may include a first layer that is formed above the semiconductor substrate. The first layer may contain a hydrogen-absorbing first metal. The semiconductor device may include a second layer that is formed above the first layer. The second layer may contain a second metal differing from the first metal. The semiconductor device may include an Si-containing layer that is formed between the first layer and the second layer and contains silicon. The second layer may further include silicon. The Si-containing layer may have a higher silicon concentration than the second layer. The second metal may be aluminum. The first metal may be titanium.

Abstract: A semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a silicon carbide semiconductor substrate of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type and connected to the first semiconductor region, a first electrode forming a Schottky-contact with the first semiconductor layer and the first semiconductor region, and a second electrode forming an ohmic contact with the second semiconductor region. The second electrode has a Ti—Al alloy layer on a surface in contact with the first electrode. The second electrode further has therein a nickel silicide layer containing titanium.

Abstract: To restrict alloy formation between a hydrogen-absorbing layer of titanium or the like and an electrode of aluminum or the like, provided is a semiconductor device. The semiconductor device may include a semiconductor substrate. The semiconductor device may include a first layer that is formed above the semiconductor substrate. The first layer may contain a hydrogen-absorbing first metal. The semiconductor device may include a second layer that is formed above the first layer. The second layer may contain a second metal differing from the first metal. The semiconductor device may include an Si-containing layer that is formed between the first layer and the second layer and contains silicon. The second layer may further include silicon. The Si-containing layer may have a higher silicon concentration than the second layer. The second metal may be aluminum. The first metal may be titanium.