Abstract: Provided is a semiconductor device having a semiconductor chip mounted over a substrate, in which an interconnect is formed, by using an adhesive layer to permit contact conduction between a stud bump of the semiconductor chip and an interconnect of a tape substrate, wherein an adhesive layer formed integral as a film is adhered to each block made of substrates corresponding to a plurality of semiconductor devices and contact bonding under heat is conducted. The adhesive layer corresponding to the plurality of semiconductor devices is thus formed continuously and with this adhesive layer, the interconnect formation surface at the end portion of the substrate is covered. Moreover, with a thermosetting resin used as the adhesive layer, the semiconductor chip and substrate are adhered by contact bonding under heat while placing the substrate on a rigid heat insulating plate.

Abstract: Provided is a semiconductor device having a semiconductor chip mounted over a substrate, in which an interconnect is formed, by using an adhesive layer to permit contact conduction between a stud bump of the semiconductor chip and an interconnect of a tape substrate, wherein an adhesive layer formed integral as a film is adhered to each block made of substrates corresponding to a plurality of semiconductor devices and contact bonding under heat is conducted. The adhesive layer corresponding to the plurality of semiconductor devices is thus formed continuously and with this adhesive layer, the interconnect formation surface at the end portion of the substrate is covered. Moreover, with a thermosetting resin used as the adhesive layer, the semiconductor chip and substrate are adhered by contact bonding under heat while placing the substrate on a rigid heat insulating plate.

Abstract: Silicon chip having narrow pitches of Au bumps are mounted on a module substrate in such a way that while taking into consideration a difference in coefficient of thermal expansion between the silicon chip and the module substrate, a total pitch of electrode pads of the silicon chip is made narrower than a total pitch of the Au bumps, thereby preventing misregistration between the Au bumps and the electrode pads in the course of heat treatment to ensure reliable contact therebetween.

Abstract: Provided is a semiconductor device having a semiconductor chip mounted over a substrate, in which an interconnect is formed, by using an adhesive layer to permit contact conduction between a stud bump of the semiconductor chip and an interconnect of a tape substrate, wherein an adhesive layer formed integral as a film is adhered to each block made of substrates corresponding to a plurality of semiconductor devices and contact bonding under heat is conducted. The adhesive layer corresponding to the plurality of semiconductor devices is thus formed continuously and with this adhesive layer, the interconnect formation surface at the end portion of the substrate is covered. Moreover, with a thermosetting resin used as the adhesive layer, the semiconductor chip and substrate are adhered by contact bonding under heat while placing the substrate on a rigid heat insulating plate.

Abstract: Silicon chip having narrow pitches of Au bumps are mounted on a module substrate in such a way that while taking into consideration a difference in coefficient of thermal expansion between the silicon chip and the module substrate, a total pitch of electrode pads of the silicon chip is made narrower than a total pitch of the Au bumps, thereby preventing misregistration between the Au bumps and the electrode pads in the course of heat treatment to ensure reliable contact therebetween.

Abstract: Silicon chip having narrow pitches of Au bumps are mounted on a module substrate in such a way that while taking into consideration a difference in coefficient of thermal expansion between the silicon chip and the module substrate, a total pitch of electrode pads of the silicon chip is made narrower than a total pitch of the Au bumps, thereby preventing misregistration between the Au bumps and the electrode pads in the course of heat treatment to ensure reliable contact therebetween.

Abstract: Silicon chip having narrow pitches of Au bumps are mounted on a module substrate in such a way that while taking into consideration a difference in coefficient of thermal expansion between the silicon chip and the module substrate, a total pitch of electrode pads of the silicon chip is made narrower than a total pitch of the Au bumps, thereby preventing misregistration between the Au bumps and the electrode pads in the course of heat treatment to ensure reliable contact therebetween.