Patents by Inventor Tsukuru Katsuyama
Tsukuru Katsuyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210336417Abstract: An optical apparatus includes a light emitting module having a light emitting device, the light emitting device having a first semiconductor layer, a core layer, and a second semiconductor layer laminated in order, and an optical element on which a light emitted from the light emitting module is incident. The first semiconductor layer, the core layer, and the second semiconductor layer are arranged along a lamination direction. The lamination direction is inclined with respect to a direction perpendicular to an optical axis of the optical element.Type: ApplicationFiled: April 7, 2021Publication date: October 28, 2021Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Jun-ichi HASHIMOTO, Tsukuru KATSUYAMA
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Publication number: 20200203932Abstract: A semiconductor laser includes an active layer which is provided between the p-type semiconductor region and the n-type semiconductor region and has a type II quantum well structure. The type II quantum well structure includes a well layer made of a III-V compound semiconductor and a plurality of barrier layers. The well layer includes a first region and a second region, the first region having a low potential for electrons in the well layer and a high potential for holes in the well layer, the second region having a high potential for electrons in the well layer and a low potential for holes in the well layer. The first region and the second region of the well layer are arranged in a direction from one of the barrier layers to another of the barrier layers.Type: ApplicationFiled: November 21, 2019Publication date: June 25, 2020Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventor: Tsukuru KATSUYAMA
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Patent number: 10312666Abstract: A semiconductor laser includes a substrate having a principal surface; an active region disposed on the principal surface of a substrate, the active region including a quantum well structure, the active region having a top surface, a bottom surface facing the top surface, and side surfaces; an emitter region including a first semiconductor region of a first conductivity type on the top surface of the active region; and a collector region including a second semiconductor region of the first conductivity type on at least one side surface of the active region. The quantum well structure includes unit cells that are arranged in a direction of an axis intersecting the principal surface of the substrate.Type: GrantFiled: January 29, 2018Date of Patent: June 4, 2019Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventor: Tsukuru Katsuyama
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Patent number: 10277010Abstract: A semiconductor laser includes a mesa structure disposed on a principal surface of a substrate, the mesa structure extending in a direction of an axis parallel to the principal surface, the mesa structure including an active region that includes a quantum well, the active region having top and bottom surfaces, and first, second, third and fourth side surfaces; an emitter region disposed on at least one of the first and second side surfaces, and the top and bottom surfaces; and a collector region including a quantum filter structure disposed on at least one of the side surfaces. The collector region is separated from the emitter region on the mesa structure. The first and second side surfaces extend in the direction of the axis. The third side surface extends in a direction intersecting the axis.Type: GrantFiled: January 29, 2018Date of Patent: April 30, 2019Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Tsukuru Katsuyama, Takashi Kato
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Publication number: 20180261980Abstract: A semiconductor laser includes a substrate having a principal surface; an active region disposed on the principal surface of a substrate, the active region including a plurality of quantum well structures, the active region having a top surface, a bottom surface facing the top surface, and a side surface; a first semiconductor region of a first conductivity type on one of the top and bottom surfaces of the active region; and a second semiconductor region of the first conductivity type on the side surface of the active region. The quantum well structures are arranged in a direction of a first axis intersecting the principal surface of the substrate.Type: ApplicationFiled: January 29, 2018Publication date: September 13, 2018Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventor: Tsukuru KATSUYAMA
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Publication number: 20180261982Abstract: A semiconductor laser includes a substrate having a principal surface; an active region having a top surface and a side surface, the active region including a plurality of quantum well structures arranged in a direction of a first axis intersecting the principal surface of the substrate; a semiconductor mesa having first and second portions arranged in a direction of a waveguide axis above the principal surface of the substrate, the semiconductor mesa including the active region; a first semiconductor region of a first conductivity type on the top and side surfaces of the active region in the first portion of the semiconductor mesa; and a collector region on the side surface of the active region in the second portion of the semiconductor mesa.Type: ApplicationFiled: January 29, 2018Publication date: September 13, 2018Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventor: Tsukuru KATSUYAMA
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Publication number: 20180261981Abstract: A semiconductor laser includes a mesa structure disposed on a principal surface of a substrate, the mesa structure extending in a direction of a waveguide axis, the mesa structure including an active region that includes a plurality of quantum well structures arranged in a direction of a first axis intersecting the waveguide axis, the active region having top and bottom surfaces, and first, second, and third side surfaces; an emitter region disposed on at least one of the first and second side surfaces, and the top and bottom surfaces; and a collector region including a quantum filter structure disposed on at least one of the first, second, and third side surfaces. The collector region is separated from the emitter region on the mesa structure. The first and second side surfaces extend in the direction of the waveguide axis. The third side surface extends in a direction intersecting the waveguide axis.Type: ApplicationFiled: January 29, 2018Publication date: September 13, 2018Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Tsukuru KATSUYAMA, Takashi Kato
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Publication number: 20180183213Abstract: A semiconductor laser operable by a reduced bias is disclosed. The semiconductor laser includes a substrate, an active area including a quantum well structure, an emitter area and a collector area, where those areas laterally extend on the substrate as the emitter and collector areas sandwich the active area therebetween. The emitter area and the collector area show the conduction type same to each other. The quantum well structure may cause the radiative transition from a higher energy band to a lower energy band, while, the emitter area has a conduction band whose level is equal to or higher than the higher energy band in the quantum well structure and the collector area in a level of the conduction band thereof is equal to or lower than the lower energy band of the quantum well structure.Type: ApplicationFiled: September 12, 2016Publication date: June 28, 2018Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Tsukuru KATSUYAMA, Takashi KATO
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Patent number: 9923337Abstract: A quantum cascade laser includes a laser structure including laser waveguide structures and a first terrace region; first electrodes; pad electrodes; and wiring metal conductors. The laser structure includes first, second and third regions arranged in a direction of a first axis. The third region is disposed between the first and second regions. The first region has a first end facet disposed at a boundary between the first and third regions. The first end facet extends in a direction intersecting with the first axis. The second region has a second end facet disposed at a boundary between the second and third regions. The second region includes the laser structure. The pad electrodes are disposed on the first terrace region. The first electrodes are disposed on the laser waveguide structures. Each of the pad electrodes is connected to one of the first electrodes through one of the wiring metal conductors.Type: GrantFiled: November 15, 2016Date of Patent: March 20, 2018Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Hiroyuki Yoshinaga, Tsukuru Katsuyama, Jun-ichi Hashimoto
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Patent number: 9882347Abstract: A quantum cascade laser includes a substrate having first and second substrate regions arranged along a first axis; a laser structure body including a laser body region having laser waveguide structures extending along the first axis, the laser structure body including first and second regions respectively including the first and second substrate regions, the laser body region having an end facet located at a boundary between the first and second regions, the second region including a terrace extending along the first axis from a bottom edge of the end facet; a plurality of first electrodes disposed on the laser waveguide structures; a plurality of pad electrodes disposed on the terrace; and a plurality of wiring metal bodies each of which includes a first portion on the terrace and a second portion on the end facet. The pad electrodes are connected with the first electrodes through the wiring metal bodies, respectively.Type: GrantFiled: July 28, 2016Date of Patent: January 30, 2018Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Jun-ichi Hashimoto, Tsukuru Katsuyama, Hiroyuki Yoshinaga
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Publication number: 20170141542Abstract: A quantum cascade laser includes a laser structure including laser waveguide structures and a first terrace region; first electrodes; pad electrodes; and wiring metal conductors. The laser structure includes first, second and third regions arranged in a direction of a first axis. The third region is disposed between the first and second regions. The first region has a first end facet disposed at a boundary between the first and third regions. The first end facet extends in a direction intersecting with the first axis. The second region has a second end facet disposed at a boundary between the second and third regions. The second region includes the laser structure. The pad electrodes are disposed on the first terrace region. The first electrodes are disposed on the laser waveguide structures. Each of the pad electrodes is connected to one of the first electrodes through one of the wiring metal conductors.Type: ApplicationFiled: November 15, 2016Publication date: May 18, 2017Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Hiroyuki YOSHINAGA, Tsukuru Katsuyama, Jun-ichi Hashimoto
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Publication number: 20170040769Abstract: A quantum cascade laser includes a substrate having first and second substrate regions arranged along a first axis; a laser structure body including a laser body region having laser waveguide structures extending along the first axis, the laser structure body including first and second regions respectively including the first and second substrate regions, the laser body region having an end facet located at a boundary between the first and second regions, the second region including a terrace extending along the first axis from a bottom edge of the end facet; a plurality of first electrodes disposed on the laser waveguide structures; a plurality of pad electrodes disposed on the terrace; and a plurality of wiring metal bodies each of which includes a first portion on the terrace and a second portion on the end facet. The pad electrodes are connected with the first electrodes through the wiring metal bodies, respectively.Type: ApplicationFiled: July 28, 2016Publication date: February 9, 2017Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Jun-ichi HASHIMOTO, Tsukuru KATSUYAMA, Hiroyuki YOSHINAGA
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Patent number: 7986721Abstract: In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the first semiconductor portion are arranged along a predetermined plane. The second semiconductor portion is provided on the first region of the first semiconductor portion. The active layer is provided on the second semiconductor portion of the first conductive type semiconductor region. The second conductive type semiconductor region is provided on the second region of the first semiconductor portion of the first conductive type semiconductor region. The side of the second semiconductor portion of the first conductive type semiconductor region, the top and side of the active layer, the second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction.Type: GrantFiled: April 22, 2008Date of Patent: July 26, 2011Assignee: Sumitomo Electric Industries, Ltd.Inventors: Tsukuru Katsuyama, Jun-Ichi Hashimoto
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Patent number: 7838893Abstract: A semiconductor optical device comprises a first conductive type semiconductor region, an active layer provided on the second semiconductor portion of the first conductive type semiconductor region, a second conductive type semiconductor region on the side and top of the active layer, the side of the second semiconductor portion, and the second region of the first semiconductor portion of the first conductive type semiconductor region, a potential adjusting semiconductor layer provided between the second semiconductor portion of the first conductive type semiconductor region and the active layer, and first and second distributed Bragg reflector portions between which the first conductive type semiconductor region, the active layer and the second conductive type semiconductor region is provided. Bandgap energies of the first conductive type semiconductor region and second conductive type semiconductor region are greater than that of the active layer.Type: GrantFiled: September 22, 2005Date of Patent: November 23, 2010Assignee: Sumitomo Electric Industries, Ltd.Inventors: Tsukuru Katsuyama, Jun-ichi Hashimoto
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Patent number: 7613217Abstract: This surface emitting semiconductor device 1 comprises a first conductivity type semiconductor region, an active layer, a second conductivity type semiconductor layer and current block semiconductor region. The first conductivity type semiconductor region is provided on a surface made of GaAs semiconductor. The active layer is provided on the first conductivity type semiconductor region. The active layer has a side surface. The second conductivity type semiconductor layer is provided on the active layer. The second conductivity type semiconductor layer has a side surface. The current block semiconductor region is provided on the side surface of the active layer and on the side surface of the second conductivity type semiconductor layer. The active layer is made of III-V compound semiconductor including at least nitrogen element as a V group element.Type: GrantFiled: February 15, 2008Date of Patent: November 3, 2009Assignee: Sumitomo Electric Industries, Ltd.Inventors: Tsukuru Katsuyama, Jun-ichi Hashimoto
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Publication number: 20080240195Abstract: In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the first semiconductor portion are arranged along a predetermined plane. The second semiconductor portion is provided on the first region of the first semiconductor portion. The active layer is provided on the second semiconductor portion of the first conductive type semiconductor region. The second conductive type semiconductor region is provided on the second region of the first semiconductor portion of the first conductive type semiconductor region. The side of the second semiconductor portion of the first conductive type semiconductor region, the top and side of the active layer, the second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction.Type: ApplicationFiled: April 22, 2008Publication date: October 2, 2008Inventors: Tsukuru Katsuyama, Jun-ichi Hashimoto
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Patent number: 7405421Abstract: The present invention provides an optical device integrating an active device with a passive device without any butt joint structure between two devices. The optical integrated device of the invention includes a GaAs substrate, first and second cladding layers, and an active layer sandwiched by the first and second cladding layers. These layers are disposed on the GaAs substrate. The GaAs substrate provides a first region and a second region. The active layer comprises of the first active layer disposed on the first region and the second active layer disposed on the second region of the GaAs substrate. The first active layer has a quantum well structure whose band-gap energy smaller than 1.3 eV, while the second active layer has a quantum well structure whose band-gap energy is greater than that of the first active layer.Type: GrantFiled: March 25, 2005Date of Patent: July 29, 2008Assignee: Sumitomo Electric Industries, Ltd.Inventors: Jun-ichi Hashimoto, Tsukuru Katsuyama, Kenji Koyama
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Publication number: 20080151958Abstract: This surface emitting semiconductor device 1 comprises a first conductivity type semiconductor region, an active layer, a second conductivity type semiconductor layer and current block semiconductor region. The first conductivity type semiconductor region is provided on a surface made of GaAs semiconductor. The active layer is provided on the first conductivity type semiconductor region. The active layer has a side surface. The second conductivity type semiconductor layer is provided on the active layer. The second conductivity type semiconductor layer has a side surface. The current block semiconductor region is provided on the side surface of the active layer and on the side surface of the second conductivity type semiconductor layer. The active layer is made of III-V compound semiconductor including at least nitrogen element as a V group element.Type: ApplicationFiled: February 15, 2008Publication date: June 26, 2008Inventors: Tsukuru Katsuyama, Jun-ichi Hashimoto
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Patent number: 7379485Abstract: In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the first semiconductor portion are arranged along a predetermined plane. The second semiconductor portion is provided on the first region of the first semiconductor portion. The active layer is provided on the second semiconductor portion of the first conductive type semiconductor region. The second conductive type semiconductor region is provided on the second region of the first semiconductor portion of the first conductive type semiconductor region. The side of the second semiconductor portion of the first conductive type semiconductor region, the top and side of the active layer, the second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction.Type: GrantFiled: September 21, 2005Date of Patent: May 27, 2008Assignee: Sumitomo Electric Industries, Ltd.Inventors: Tsukuru Katsuyama, Jun-ichi Hashimoto
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Patent number: 7356063Abstract: This surface emitting semiconductor device 1 comprises a first conductivity type semiconductor region, an active layer, a second conductivity type semiconductor layer and current block semiconductor region. The first conductivity type semiconductor region is provided on a surface made of GaAs semiconductor. The active layer is provided on the first conductivity type semiconductor region. The active layer has a side surface. The second conductivity type semiconductor layer is provided on the active layer. The second conductivity type semiconductor layer has a side surface. The current block semiconductor region is provided on the side surface of the active layer and on the side surface of the second conductivity type semiconductor layer. The active layer is made of III-V compound semiconductor including at least nitrogen element as a V group element.Type: GrantFiled: April 12, 2004Date of Patent: April 8, 2008Assignee: Sumitomo Electric Industries, Ltd.Inventors: Tsukuru Katsuyama, Jun-ichi Hashimoto