Patents by Inventor Tsun-Cheng Tang

Tsun-Cheng Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11953448
    Abstract: A method for defect inspection includes receiving a substrate having a plurality of patterns; obtaining a gray scale image of the substrate, wherein the gray scale image includes a plurality of regions, and each of the regions has a gray scale value; comparing the gray scale value of each region to a gray scale references to define a first group, a second group and an Nth group, wherein each of the first group, the second group and the Nth group has at least a region; performing a calculation to obtain a score; and when the score is greater than a value, the substrate is determined to have an ESD defect, and when the score is less than the value, the substrate is determined to be free of the ESD defect.
    Type: Grant
    Filed: April 7, 2020
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tsun-Cheng Tang, Hao-Ming Chang, Sheng-Chang Hsu, Cheng-Ming Lin
  • Patent number: 11567400
    Abstract: In accordance with some embodiments of the present disclosure, an inspection method of a photomask includes performing a first inspection process, unloading the photomask from the inspection system, and performing a second inspection process. In the first inspection process, a common Z calibration map of an objective lens of an optical module with respect to the photomask is generated and stored, and a first image of the photomask is captured by using an image sensor while focusing the objective lens of the optical module based on the common Z calibration map. The photomask is unloaded from the inspection system. In the second inspection process, the photomask is loaded on the inspection system and a second image of the photomask is captured by using an image sensor while focusing an objective lens of an optical module based on the common Z calibration map generated in the first inspection process.
    Type: Grant
    Filed: May 26, 2021
    Date of Patent: January 31, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsun-Cheng Tang, Cheng-Ming Lin, Sheng-Chang Hsu, Hao-Ming Chang, Way-Len Chang
  • Publication number: 20210278760
    Abstract: In accordance with some embodiments of the present disclosure, an inspection method of a photomask includes performing a first inspection process, unloading the photomask from the inspection system, and performing a second inspection process. In the first inspection process, a common Z calibration map of an objective lens of an optical module with respect to the photomask is generated and stored, and a first image of the photomask is captured by using an image sensor while focusing the objective lens of the optical module based on the common Z calibration map. The photomask is unloaded from the inspection system. In the second inspection process, the photomask is loaded on the inspection system and a second image of the photomask is captured by using an image sensor while focusing an objective lens of an optical module based on the common Z calibration map generated in the first inspection process.
    Type: Application
    Filed: May 26, 2021
    Publication date: September 9, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsun-Cheng Tang, Cheng-Ming Lin, Sheng-Chang Hsu, Hao-Ming Chang, Way-Len Chang
  • Patent number: 11048163
    Abstract: In accordance with some embodiments of the present disclosure, an inspection method of a photomask includes performing a first inspection process, unloading the photomask from the inspection system, and performing a second inspection process. In the first inspection process, a common Z calibration map of an objective lens of an optical module with respect to the photomask is generated and stored, and a first image of the photomask is captured by using an image sensor while focusing the objective lens of the optical module based on the common Z calibration map. The photomask is unloaded from the inspection system. In the second inspection process, the photomask is loaded on the inspection system and a second image of the photomask is captured by using an image sensor while focusing an objective lens of an optical module based on the common Z calibration map generated in the first inspection process.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: June 29, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsun-Cheng Tang, Cheng-Ming Lin, Sheng-Chang Hsu, Hao-Ming Chang, Waylen Chang
  • Publication number: 20210096086
    Abstract: A method for defect inspection includes receiving a substrate having a plurality of patterns; obtaining a gray scale image of the substrate, wherein the gray scale image includes a plurality of regions, and each of the regions has a gray scale value; comparing the gray scale value of each region to a gray scale references to define a first group, a second group and an Nth group, wherein each of the first group, the second group and the Nth group has at least a region; performing a calculation to obtain a score; and when the score is greater than a value, the substrate is determined to have an ESD defect, and when the score is less than the value, the substrate is determined to be free of the ESD defect.
    Type: Application
    Filed: April 7, 2020
    Publication date: April 1, 2021
    Inventors: TSUN-CHENG TANG, HAO-MING CHANG, SHENG-CHANG HSU, CHENG-MING LIN
  • Publication number: 20190137869
    Abstract: In accordance with some embodiments of the present disclosure, an inspection method of a photomask includes performing a first inspection process, unloading the photomask from the inspection system, and performing a second inspection process. In the first inspection process, a common Z calibration map of an objective lens of an optical module with respect to the photomask is generated and stored, and a first image of the photomask is captured by using an image sensor while focusing the objective lens of the optical module based on the common Z calibration map. The photomask is unloaded from the inspection system. In the second inspection process, the photomask is loaded on the inspection system and a second image of the photomask is captured by using an image sensor while focusing an objective lens of an optical module based on the common Z calibration map generated in the first inspection process.
    Type: Application
    Filed: December 5, 2017
    Publication date: May 9, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsun-Cheng Tang, Cheng-Ming Lin, Sheng-Chang Hsu, Hao-Ming Chang, Waylen Chang
  • Publication number: 20070012335
    Abstract: A multi-step cleaning procedure cleans phase shift photomasks and other photomasks and Mo-containing surfaces. In one embodiment, vacuum ultraviolet (VUV) light produced by an Xe2 excimer laser converts oxygen to ozone that is used in a first cleaning operation. The VUV/ozone clean may be followed by a wet SC1 chemical clean and the two-step cleaning procedure reduces phase-shift loss and increases transmission. In another embodiment, the first step may use other means to form a molybdenum oxide on the Mo-containing surface. In another embodiment, the multi-step cleaning operation provides a wet chemical clean such as SC1 or SPM or both, followed by a further chemical or physical treatment such as ozone, baking or electrically ionized water.
    Type: Application
    Filed: July 18, 2005
    Publication date: January 18, 2007
    Inventors: Hsiao Chang, Tsun-Cheng Tang, Fei-Gwo Tsai, Tzu-Li Lee, Chien-Ming Chiu, Jang Lee, Yih-Chen Su, Chih-Cheng Lin, Tung Kang, Hung Hsieh
  • Patent number: 6627363
    Abstract: The present invention relates to a method of removing halos resulting from focused ion beam (FIB) repair of clear defects on reticles. The halos are formed during carbon deposition on clear defects. An exposure with 172 nm VUV radiation is used to vaporize the carbon compounds in the halo. MSM measurements of the space width adjacent to the repair site are compared to space widths between similar features in areas that are clear of halos. The radiation and measurement is repeated until the % variation between said space widths is <2%. Cleaning and MSM measurement steps are repeated until space width adjacent to the repair site is within 2% of space width in unaffected areas. This method avoids expensive rework and restores transmission through the substrate adjacent to the repair site to a value equivalent to regions of substrate unaffected by halos.
    Type: Grant
    Filed: July 17, 2002
    Date of Patent: September 30, 2003
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Vincent Wen, Tung-Yaw Kang, Chih-Sheng Chen, Jun-Hsien Chiou, Tsun-Cheng Tang