Patents by Inventor Tsun Chung Tu
Tsun Chung Tu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240090340Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a memory device surrounded by a dielectric structure disposed over a substrate. The memory device includes a data storage structure disposed between a bottom electrode and a top electrode. A bottom electrode via couples the bottom electrode to a lower interconnect. A top electrode via couples the top electrode to an upper interconnect. A bottommost surface of the top electrode via is directly over the top electrode and has a first width that is smaller than a second width of a bottommost surface of the bottom electrode via.Type: ApplicationFiled: November 16, 2023Publication date: March 14, 2024Inventors: Ming-Che Ku, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Patent number: 11889769Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a magnetic tunnel junction arranged between a bottom electrode and a top electrode and surrounded by a dielectric structure disposed over a substrate. The top electrode has a width that decreases as a height of the top electrode increases. A bottom electrode via couples the bottom electrode to a lower interconnect. An upper interconnect structure is coupled to the top electrode. The upper interconnect structure has a vertically extending surface that is disposed laterally between first and second outermost sidewalls of the upper interconnect structure and along a sidewall of the top electrode. The vertically extending surface and the first outermost sidewall are connected to a bottom surface of the upper interconnect structure that is vertically below a top of the top electrode.Type: GrantFiled: July 25, 2022Date of Patent: January 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming-Che Ku, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Publication number: 20220359815Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a magnetic tunnel junction arranged between a bottom electrode and a top electrode and surrounded by a dielectric structure disposed over a substrate. The top electrode has a width that decreases as a height of the top electrode increases. A bottom electrode via couples the bottom electrode to a lower interconnect. An upper interconnect structure is coupled to the top electrode. The upper interconnect structure has a vertically extending surface that is disposed laterally between first and second outermost sidewalls of the upper interconnect structure and along a sidewall of the top electrode. The vertically extending surface and the first outermost sidewall are connected to a bottom surface of the upper interconnect structure that is vertically below a top of the top electrode.Type: ApplicationFiled: July 25, 2022Publication date: November 10, 2022Inventors: Ming-Che Ku, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Patent number: 11489107Abstract: The present disclosure relates to a method of forming an integrated chip. The method includes forming an ILD layer over a memory device over a substrate. A hard mask structure is formed over the ILD layer and a patterning structure is formed over the hard mask structure. The hard mask structure has sidewalls defining a first opening directly over the memory device and centered along a first line perpendicular to an upper surface of the substrate. The patterning structure has sidewalls defining a second opening directly over the memory device and centered along a second line parallel to the first line. The second line is laterally offset from the first line by a non-zero distance. The ILD layer is etched below an overlap of the first and second openings to define a top electrode via hole. The top electrode via hole is with a conductive material.Type: GrantFiled: September 2, 2020Date of Patent: November 1, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming-Che Ku, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Patent number: 11469372Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a memory device surrounded by a dielectric structure disposed over a substrate. The memory device includes a data storage structure disposed between a bottom electrode and a top electrode. A top electrode via couples the top electrode to an upper interconnect wire. A first line is tangent to a first outermost sidewall of the top electrode via and a second line is tangent to an opposing second outermost sidewall of the top electrode via. The first line is oriented at a first angle with respect to a horizontal plane that is parallel to an upper surface of the substrate and the second line is oriented at a second angle with respect to the horizontal plane. The second angle is less than the first angle.Type: GrantFiled: September 2, 2020Date of Patent: October 11, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming-Che Ku, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Publication number: 20220246843Abstract: Some embodiments relate to a semiconductor structure having a magnetic tunnel junction (MTJ) on a substrate and a top electrode on the MTJ. A first segment of a top surface of the top electrode adjacent to a first sidewall of the top electrode is different from a second segment of the top surface of the top electrode adjacent to a second sidewall of the top electrode. A sidewall spacer comprises a first spacer on the first sidewall of the top electrode and a second spacer on the second sidewall of the top electrode. A first surface of the first spacer comprises a first curve and a second surface of the second spacer comprises a second curve. A dielectric layer is around the MTJ and top electrode.Type: ApplicationFiled: April 21, 2022Publication date: August 4, 2022Inventors: Harry-Hak-Lay Chuang, Chen-Pin Hsu, Hung Cho Wang, Wen-Chun You, Sheng-Chang Chen, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Publication number: 20210351345Abstract: Some embodiments relate to an integrated chip having a memory cell overlying a substrate and comprising a top electrode. A top electrode via overlies the top electrode. A width of an upper surface of the top electrode via is greater than a width of an upper surface of the top electrode. A conductive via overlies the top electrode via. A width of an upper surface of the conductive via is greater than the width of the upper surface of the top electrode via.Type: ApplicationFiled: July 21, 2021Publication date: November 11, 2021Inventors: Harry-Hak-Lay Chuang, Chen-Pin Hsu, Hung Cho Wang, Wen-Chun You, Sheng-Chang Chen, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Patent number: 11075335Abstract: Some embodiments relate to a method for manufacturing a memory device. The method includes forming a first masking layer disposed over a dielectric layer, the first masking layer exhibiting sidewalls defining an opening disposed above a magnetoresistive random-access memory (MRAM) cell located in an embedded memory region. A first etch is performed to form a first via opening within the dielectric layer above the MRAM cell. A top electrode via layer formed over the MRAM cell and the dielectric layer. A first planarization process performed on the top electrode via layer to remove part of the top electrode via layer and define a top electrode via having a substantially flat top surface.Type: GrantFiled: May 10, 2019Date of Patent: July 27, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Harry-Hak-Lay Chuang, Chen-Pin Hsu, Hung Cho Wang, Wen-Chun You, Sheng-Chang Chen, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Publication number: 20210028350Abstract: The present disclosure relates to a method of forming an integrated chip. The method includes forming an ILD layer over a memory device over a substrate. A hard mask structure is formed over the ILD layer and a patterning structure is formed over the hard mask structure. The hard mask structure has sidewalls defining a first opening directly over the memory device and centered along a first line perpendicular to an upper surface of the substrate. The patterning structure has sidewalls defining a second opening directly over the memory device and centered along a second line parallel to the first line. The second line is laterally offset from the first line by a non-zero distance. The ILD layer is etched below an overlap of the first and second openings to define a top electrode via hole. The top electrode via hole is with a conductive material.Type: ApplicationFiled: September 2, 2020Publication date: January 28, 2021Inventors: Ming-Che Ku, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Publication number: 20200403146Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a memory device surrounded by a dielectric structure disposed over a substrate. The memory device includes a data storage structure disposed between a bottom electrode and a top electrode. A top electrode via couples the top electrode to an upper interconnect wire. A first line is tangent to a first outermost sidewall of the top electrode via and a second line is tangent to an opposing second outermost sidewall of the top electrode via. The first line is oriented at a first angle with respect to a horizontal plane that is parallel to an upper surface of the substrate and the second line is oriented at a second angle with respect to the horizontal plane. The second angle is less than the first angle.Type: ApplicationFiled: September 2, 2020Publication date: December 24, 2020Inventors: Ming-Che Ku, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Patent number: 10790439Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a magnetoresistive random access memory (MRAM) device surrounded by a dielectric structure disposed over a substrate. The MRAM device includes a magnetic tunnel junction disposed between a bottom electrode and a top electrode. A bottom electrode via couples the bottom electrode to a lower interconnect wire. A top electrode via couples the top electrode to an upper interconnect wire. A bottom surface of the top electrode via has a first width that is smaller than a second width of a bottom surface of the bottom electrode via.Type: GrantFiled: May 20, 2019Date of Patent: September 29, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Che Ku, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Publication number: 20200098982Abstract: Some embodiments relate to a method for manufacturing a memory device. The method includes forming a first masking layer disposed over a dielectric layer, the first masking layer exhibiting sidewalls defining an opening disposed above a magnetoresistive random-access memory (MRAM) cell located in an embedded memory region. A first etch is performed to form a first via opening within the dielectric layer above the MRAM cell. A top electrode via layer formed over the MRAM cell and the dielectric layer. A first planarization process performed on the top electrode via layer to remove part of the top electrode via layer and define a top electrode via having a substantially flat top surface.Type: ApplicationFiled: May 10, 2019Publication date: March 26, 2020Inventors: Harry-Hak-Lay Chuang, Chen-Pin Hsu, Hung Cho Wang, Wen-Chun You, Sheng-Chang Chen, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Publication number: 20200035908Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a magnetoresistive random access memory (MRAM) device surrounded by a dielectric structure disposed over a substrate. The MRAM device includes a magnetic tunnel junction disposed between a bottom electrode and a top electrode. A bottom electrode via couples the bottom electrode to a lower interconnect wire. A top electrode via couples the top electrode to an upper interconnect wire. A bottom surface of the top electrode via has a first width that is smaller than a second width of a bottom surface of the bottom electrode via.Type: ApplicationFiled: May 20, 2019Publication date: January 30, 2020Inventors: Ming-Che Ku, Harry-Hak-Lay Chuang, Hung Cho Wang, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Patent number: 10109790Abstract: A method for manufacturing a semiconductor structure is disclosed. The method includes: providing a substrate; forming an MRAM structure over the substrate; forming a first dielectric layer over the MRAM structure; forming a stop layer over the first dielectric layer; forming a second dielectric layer over the stop layer; and removing the second dielectric layer, the stop layer and at least a portion of the first dielectric layer through a planarization operation without exposing a top electrode of the MRAM structure. Associated methods are also disclosed.Type: GrantFiled: August 22, 2017Date of Patent: October 23, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Harry-Hak-Lay Chuang, Jiunyu Tsai, Hung Cho Wang, Tsun Chung Tu
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Publication number: 20170352804Abstract: A method for manufacturing a semiconductor structure is disclosed. The method includes: providing a substrate; forming an MRAM structure over the substrate; forming a first dielectric layer over the MRAM structure; forming a stop layer over the first dielectric layer; forming a second dielectric layer over the stop layer; and removing the second dielectric layer, the stop layer and at least a portion of the first dielectric layer through a planarization operation without exposing a top electrode of the MRAM structure. Associated methods are also disclosed.Type: ApplicationFiled: August 22, 2017Publication date: December 7, 2017Inventors: HARRY-HAK-LAY CHUANG, JIUNYU TSAI, HUNG CHO WANG, TSUN CHUNG TU
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Publication number: 20170301856Abstract: A method for manufacturing a semiconductor structure is disclosed. The method includes: providing a substrate; forming an MRAM structure over the substrate; forming a first dielectric layer over the MRAM structure; forming a stop layer over the first dielectric layer; forming a second dielectric layer over the stop layer; and removing the second dielectric layer, the stop layer and at least a portion of the first dielectric layer through a planarization operation without exposing a top electrode of the MRAM structure. Associated methods are also disclosed.Type: ApplicationFiled: April 15, 2016Publication date: October 19, 2017Inventors: HARRY-HAK-LAY CHUANG, JIUNYU TSAI, HUNG CHO WANG, TSUN CHUNG TU
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Patent number: 9780301Abstract: A method for manufacturing a semiconductor structure is disclosed. The method includes: providing a substrate; forming an MRAM structure over the substrate; forming a first dielectric layer over the MRAM structure; forming a stop layer over the first dielectric layer; forming a second dielectric layer over the stop layer; and removing the second dielectric layer, the stop layer and at least a portion of the first dielectric layer through a planarization operation without exposing a top electrode of the MRAM structure. Associated methods are also disclosed.Type: GrantFiled: April 15, 2016Date of Patent: October 3, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Harry-Hak-Lay Chuang, Jiunyu Tsai, Hung Cho Wang, Tsun Chung Tu