Patents by Inventor Tsun-Neng Yang

Tsun-Neng Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170107382
    Abstract: An antioxidant conductive copper paste and a method for preparing the same are revealed. The antioxidant conductive copper paste includes conductive particles, a pasting agent, and a solvent. The conductive particles are copper nanoparticles or copper alloy nanoparticles. The pasting agent can be ethyl cellulose, Poly(3,4-ethylenedioxythiophene) (PEDOT), or epoxy. The solvent can be terpineol, ethylene glycol or diethylene glycol. The antioxidant conductive copper paste with features of high stability and low cost can be applied to produce electrodes of heterojunction solar cells.
    Type: Application
    Filed: November 27, 2015
    Publication date: April 20, 2017
    Inventors: WEI-CHEN CHANG, WEI-YANG MA, LI-WEI WENG, JUN-XIANG LIANG, CHENG-HUAN CHUNG, CHI-KAI CHUANG, TSUN-NENG YANG
  • Patent number: 9570635
    Abstract: The present invention discloses in detail a semiconductor device and a patterning method for the plated electrode thereof. By using the laser ablation method according to the prior art, the semiconductor substrate below the ARC is damaged by direct destructive burning. According to the present invention, an additional protection layer is inserted between the ARC and the semiconductor substrate. Then a laser is used for heating and liquefying the protection layer below the ARC, and thus separating the ARC from the liquefied protection layer underneath and forming pattered openings. Afterwards, by a plating process, nickel and copper can plated.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: February 14, 2017
    Assignee: Atomic Energy Council—Institute of Nuclear Energy Research
    Inventors: Yu-Han Su, Wei-Yang Ma, Tsun-Neng Yang, Cheng-Dar Lee
  • Publication number: 20160284890
    Abstract: The present relates to antioxidant conductive copper ink and the method for preparing the same. The antioxidant conductive copper ink comprises nanometer copper or copper-alloy particles, which are used as the conductive particle material, water-free alcohol, which is used as the solvent, tert-butanol and ultra-pure water, which is used as the pasting agent, and carboxylic acid, which is used as the dispersant. Alternatively, isopropanol is used as the pasting agent and glycol is used as the solvent for injecting processes. The antioxidant conductive copper ink disclosed in the present invention owns the properties of high stability and low cost, and hence is applicable to the applications of fabricating the electrodes of silicon-crystal solar cells and printable electronic materials such as PCB or RFID.
    Type: Application
    Filed: May 6, 2015
    Publication date: September 29, 2016
    Inventors: WEI-CHEN CHANG, WEI-YANG MA, GUAN-LIN CHEN, LI-WEI WENG, CHENG-HUAN CHUNG, TSUN-NENG YANG, CHENG-SI TSAO, YU-CHING HUANG
  • Publication number: 20160126369
    Abstract: The present invention discloses in detail a semiconductor device and a patterning method for the plated electrode thereof. By using the laser ablation method according to the prior art, the semiconductor substrate below the ARC is damaged by direct destructive burning. According to the present invention, an additional protection layer is inserted between the ARC and the semiconductor substrate. Then a laser is used for heating and liquefying the protection layer below the ARC, and thus separating the ARC from the liquefied protection layer underneath and forming pattered openings. Afterwards, by a plating process, nickel and copper can plated.
    Type: Application
    Filed: January 29, 2015
    Publication date: May 5, 2016
    Inventors: YU-HAN SU, WEI-YANG MA, TSUN-NENG YANG, CHENG-DAR LEE
  • Publication number: 20160087573
    Abstract: The present Invention relates to a multi-function floating solar power generating system, which uses buoys to form buoy sets. A convergence box is used as the center for forming a cross structure, on which solar cell modules installed at an inclination angle of 10 to 15 degrees are carried. According to the present invention, a water-pumping unit below the buoy set is used for pumping the fluid. Then a spray unit is used for spraying the fluid and driving the system to rotate counterclockwise or clockwise, hence achieving the effect of tracking the sun. Alternatively, the fluid can be filtered or used for cleaning the solar cell module.
    Type: Application
    Filed: September 14, 2015
    Publication date: March 24, 2016
    Inventors: HSI-HUNG YANG, WEI-YANG MA, TSUN-NENG YANG, CHENG-DAR LEE
  • Patent number: 9245758
    Abstract: A method for fabricating a silicon-doped or boron-doped aluminum electrode is revealed. Aluminum target or aluminum paste prepared by selectively doped with silicon and/or boron is arranged at a silicon wafer with a passivation layer by physical deposition or screen printing. Then the doped aluminum layer is melted in linear or dot pattern to pass through the passivation layer and contact with the silicon wafer. Thus contact resistance between an aluminum back electrode and the silicon wafer of crystalline silicon solar cells is reduced and acceptor concentration on a surface layer of the silicon wafer is increased. Therefore the process speed is faster and the energy conversion efficiency of the solar cell is improved.
    Type: Grant
    Filed: July 14, 2014
    Date of Patent: January 26, 2016
    Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
    Inventors: Wei-Yang Ma, Chien-Chang Chao, Guan-Lin Chen, Tsun-Neng Yang
  • Publication number: 20150187979
    Abstract: A heterojunction solar cell with an epitaxial silicon thin film and a method for preparing the same are revealed. Low-cost upgraded metallurgical grade silicon (UMG-Si) wafers have been used as the substrates to manufacture solar cells so as to reduce the amount of high-purity silicon materials used. First an epitaxial silicon thin film is disposed over a UMG-Si wafer. Then other layers such as an amorphous silicon thin film, a transparent conductive film, etc. are arranged to form a solar cell having heterojunction with an intrinsic thin-layer (HIT) structure. Due to reduce in using high-purity silicon materials, the manufacturing cost of the heterojunction solar cell with an epitaxial silicon thin film is significantly decreased.
    Type: Application
    Filed: December 27, 2013
    Publication date: July 2, 2015
    Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: CHUN-YAO HOU, TSUN-NENG YANG
  • Publication number: 20150072468
    Abstract: A method for fabricating a silicon-doped or boron-doped aluminum electrode is revealed. Aluminum target or aluminum paste prepared by selectively doped with silicon and/or boron is arranged at a silicon wafer with a passivation layer by physical deposition or screen printing. Then the doped aluminum layer is melted in linear or dot pattern to pass through the passivation layer and contact with the silicon wafer. Thus contact resistance between an aluminum back electrode and the silicon wafer of crystalline silicon solar cells is reduced and acceptor concentration on a surface layer of the silicon wafer is increased. Therefore the process speed is faster and the energy conversion efficiency of the solar cell is improved.
    Type: Application
    Filed: July 14, 2014
    Publication date: March 12, 2015
    Inventors: WEI-YANG MA, CHIEN-CHANG CHAO, GUAN-LIN CHEN, TSUN-NENG YANG
  • Patent number: 8921682
    Abstract: A photovoltaic system able to float on water and track sun includes a floating mechanism; an adjusting mechanism, combining with the floating mechanism; and a solar power mechanism, combining with the adjusting mechanism and located above the floating mechanism. This photovoltaic system can be located on the water surface, and has its floating mechanism to be under water by using the adjusting mechanism and the surrounding water source. The adjusting mechanism can be further used to adjust the solar power mechanism to a specific tilt angle according to the water level of the surrounding water and the sun-tracking angles that varies as the locations of the sun. Therefore, a novel photovoltaic system with simplified configuration, accurate sun tracking and enhanced power generation efficiency can be achieved.
    Type: Grant
    Filed: August 6, 2012
    Date of Patent: December 30, 2014
    Assignee: Institute of Nuclear Energy Research, Atomic Energy Council
    Inventors: His-Hung Yang, Wei-Yang Ma, Tsun-Neng Yang
  • Patent number: 8852995
    Abstract: The present invention relates to a preparation method for patternization of metal electrodes in silicon solar cells. After disposing an amorphous silicon layer on a silicon substrate processed by diffusion, laser light is projected on the amorphous silicon layer for patternization, and transforming the amorphous silicon with low optical conductivity into polysilicon with high optical conductivity thanks to the recrystallization process of the laser light. Then, after immersing the amorphous silicon layer in plating liquid, metal electrode can be formed accurately at the spots of the amorphous silicon layer patterned by laser light. No external voltage is required; plating reaction is induced by illumination directly.
    Type: Grant
    Filed: August 6, 2013
    Date of Patent: October 7, 2014
    Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
    Inventors: Yu-Han Su, Tsun-Neng Yang, Wei-Yang Ma, Chien-Chang Chao, Shan-Ming Lan
  • Publication number: 20140110264
    Abstract: A simple and fast light induced nickel plating method for p-type silicon wafer and n/p silicon solar cell material is revealed. When a n/p solar cell or p-Si semiconductor substrate, which is subjected to metallization with metal contact on the rear side, is immersed in a plating bath, metal ions are reduced on the front surface of semiconductor as soon as illumination starts on the front. The mechanism of nickel plating in this invention is nickel electroplating under the reduction reaction with the use of interfacial potential between the nickel plating bath and the metal surface. It does not need any surface catalytic processing and extra voltage. Instead, it can carry out the nickel deposition on the specific surface with a high nickel plating rate, a simple process and a low production cost.
    Type: Application
    Filed: October 24, 2012
    Publication date: April 24, 2014
    Applicant: Atomic Energy Council-Institute of Nuclear Research
    Inventors: Yu-Han Su, Wei-Yang Ma, Tsun-Neng Yang
  • Patent number: 8685840
    Abstract: An in-situ gettering method for removing impurities from the surface and interior of a upgraded metallurgical grade silicon wafer is continuously conducted in a reaction chamber. Chloride gas is mixed with carrier gas. The gaseous mixture is used to clean the surface of the silicon wafer. Then, the gaseous mixture is used to form a porous structure on the surface of the silicon wafer before hot annealing is executed. Finally, the gaseous mixture is used to execute hot etching on the surface of the silicon wafer and remove the porous structure from the surface of the silicon wafer. As the chloride gas is used to clean the surface of the silicon wafer and form the porous structure on the surface of the silicon wafer, external gettering is improved. Moreover, interstitial-type metal impurities are effectively removed from the interior of the silicon wafer.
    Type: Grant
    Filed: December 7, 2011
    Date of Patent: April 1, 2014
    Assignee: Institute of Nuclear Energy Research, Atomic Energy Council
    Inventors: Jin-Jang Jheng, Tsun-Neng Yang, Chin-Chen Chiang
  • Patent number: 8647895
    Abstract: A process of manufacturing a crystalline silicon solar cell includes forming a rough surface on a surface of the crystalline silicon wafer and an Al2O3 film is coated on a non-rough surface thereof. A single-sided n diffusion layer and phosphosilicate glass film are formed. An anti-reflection layer SiNx film is formed on a top surface of the phosphosilicate glass film. An Al metallic film is formed as a back ohmic electrode on the Al2O3 film. The local area of the anti-reflection layer SiNx film and the phosphosilicate glass film is melted and removed to form a local area of n+-Si layer. Then, an Al—Si back ohmic contact electrode is formed between the Al metallic film and the crystalline silicon wafer. A front ohmic contact electrode is formed on the molten and removed area of the antireflection layer SiNx film and the phosphosilicate film by light-induced plating.
    Type: Grant
    Filed: August 6, 2012
    Date of Patent: February 11, 2014
    Assignee: Institute of Nuclear Energy Research, Atomic Energy Council
    Inventor: Tsun-Neng Yang
  • Publication number: 20140034110
    Abstract: A photovoltaic system able to float on water and track sun includes a floating mechanism; an adjusting mechanism, combining with the floating mechanism; and a solar power mechanism, combining with the adjusting mechanism and located above the floating mechanism. This photovoltaic system can be located on the water surface, and has its floating mechanism to be under water by using the adjusting mechanism and the surrounding water source. The adjusting mechanism can be further used to adjust the solar power mechanism to a specific tilt angle according to the water level of the surrounding water and the sun-tracking angles that varies as the locations of the sun. Therefore, a novel photovoltaic system with simplified configuration, accurate sun tracking and enhanced power generation efficiency can be achieved.
    Type: Application
    Filed: August 6, 2012
    Publication date: February 6, 2014
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: His-Hung Yang, Wei-Yang Ma, Tsun-Neng Yang
  • Publication number: 20140038339
    Abstract: A process of manufacturing a crystalline silicon solar cell includes forming a rough surface on a surface of the crystalline silicon wafer and an Al2O3 film is coated on a non-rough surface thereof. A single-sided n diffusion layer and phosphosilicate glass film are formed. An anti-reflection layer SiNx film is formed on a top surface of the phosphosilicate glass film. An Al metallic film is formed as a back ohmic electrode on the Al2O3 film. The local area of the anti-reflection layer SiNx film and the phosphosilicate glass film is melted and removed to form a local area of n+-Si layer. Then, an Al—Si back ohmic contact electrode is formed between the Al metallic film and the crystalline silicon wafer. A front ohmic contact electrode is formed on the molten and removed area of the antireflection layer SiNx film and the phosphosilicate film by light-induced plating.
    Type: Application
    Filed: August 6, 2012
    Publication date: February 6, 2014
    Applicant: Atomic Energy Council-Institute of Nuclear Energy Research
    Inventor: Tsun-Neng Yang
  • Publication number: 20130149843
    Abstract: An in-situ gettering method for removing impurities from the surface and interior of a upgraded metallurgical grade silicon wafer is continuously conducted in a reaction chamber. Chloride gas is mixed with carrier gas. The gaseous mixture is used to clean the surface of the silicon wafer. Then, the gaseous mixture is used to form a porous structure on the surface of the silicon wafer before hot annealing is executed. Finally, the gaseous mixture is used to execute hot etching on the surface of the silicon wafer and remove the porous structure from the surface of the silicon wafer. As the chloride gas is used to clean the surface of the silicon wafer and form the porous structure on the surface of the silicon wafer, external gettering is improved. Moreover, interstitial-type metal impurities are effectively removed from the interior of the silicon wafer.
    Type: Application
    Filed: December 7, 2011
    Publication date: June 13, 2013
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: Jin-Jang Jheng, Tsun-Neng Yang, Chin-Chen Chiang
  • Patent number: 8450219
    Abstract: An Al2O3 thin film layer is fabricated. Atmospheric pressure chemical vapor deposition (APCVD) is processed in a normal atmospheric pressure and a low temperature. On a surface of a p-type or n-type silicon crystal wafer having a purity between 5N (99.999%) and 9N (99.9999999%), the Al2O3 thin film layer is deposited and fabricated. The deposition and fabrication are done to obtain chemical passivation and field effect passivation. In this way, the present invention can be applied in solar cells and other photoelectric devices with reduced leakage of surface currents and improved photoelectric conversion.
    Type: Grant
    Filed: September 29, 2011
    Date of Patent: May 28, 2013
    Assignee: Atomic Energy Council—Institute of Nuclear Research
    Inventor: Tsun-Neng Yang
  • Publication number: 20130084715
    Abstract: An Al2O3 thin film layer is fabricated. Atmospheric pressure chemical vapor deposition (APCVD) is processed in a normal atmospheric pressure and a low temperature. On a surface of a p-type or n-type silicon crystal wafer having a purity between 5N (99.999%) and 9N (99.9999999%), the Al2O3 thin film layer is deposited and fabricated. The deposition and fabrication are done to obtain chemical passivation and field effect passivation. In this way, the present invention can be applied in solar cells and other photoelectric devices with reduced leakage of surface currents and improved photoelectric conversion.
    Type: Application
    Filed: September 29, 2011
    Publication date: April 4, 2013
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventor: Tsun-Neng Yang
  • Publication number: 20130071967
    Abstract: Disclosed is a method for making a nickel film for use as an electrode of an n-p diode or solar cell. A light source is used to irradiate an n-type surface of the n-p diode or solar cell, thus producing electron-hole pairs in the n-p diode or solar cell. For the electric field effect at an n-p interface, electrons drift to and therefore accumulate on the n-type surface. With a plating agent, the diode voltage is added to the chemical potential for electroless plating of nickel on the n-type surface. The nickel film can be used as a buffer layer between a contact electrode and the diode or solar cell. The nickel film reduces the contact resistance to prevent a reduced efficiency of the diode or solar cell that would otherwise be caused by diffusion of the atoms of the electrode in following electroplating.
    Type: Application
    Filed: September 21, 2011
    Publication date: March 21, 2013
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: Yu-Han Su, Wei-Yang Ma, Tsun-Neng Yang
  • Patent number: 8273650
    Abstract: A high-quality epitaxial silicon thin layer is formed on an upgraded metallurgical grade silicon (UMG-Si) substrate. A thin film interface is fabricated between the UMG-Si substrate and the epitaxial silicon thin layer. The interface is capable of internal light reflection and impurities isolation. With the interface, photoelectrical conversion efficiency is improved. Thus, the present invention is fit to be applied for making solar cell having epitaxial silicon thin layer.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: September 25, 2012
    Assignee: Atomic Energy Council—Institute of Nuclear Energy Research
    Inventor: Tsun-Neng Yang