Patents by Inventor Tsunaki Tsunesada

Tsunaki Tsunesada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7375366
    Abstract: A carbon nanotube has a carbon network film of polycrystalline structure divided into crystal regions along the axis of the tube, and the length along the tube axis of each crystal region preferably ranges from 3 to 6 nm. An electron source includes a carbon nanotube having a cylindrical shape and the end of which on the substrate side is closed and disposed in a fine hole. The end on the substrate side of the tube is firmly adhered to the substrate. The carbon nanotube is produced by a method in which carbon is deposited under the condition that no metal catalyst is present in the fine hole and produced by a method in which after the carbon deposition the end of the carbon deposition film is modified by etching the carbon deposition film using a plasma.
    Type: Grant
    Filed: February 22, 2001
    Date of Patent: May 20, 2008
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Hiroshi Ohki, Tsunaki Tsunesada, Masao Urayama, Takashi Kyotani, Keitarou Matsui, Akira Tomita
  • Publication number: 20030143398
    Abstract: A carbon nanotube has a carbon network film of polycrystalline structure divided into crystal regions along the axis of the tube, and the length along the tube axis of each crystal region preferably ranges from 3 to 6 nm. An electron source includes a carbon nanotube having a cylindrical shape and the end of which on the substrate side is closed and disposed in a fine hole. The end on the substrate side of the tube is firmly adhered to the substrate. The carbon nanotube is produced by a method in which carbon is deposited under the condition that no metal catalyst is present in the fine hole and produced by a method in which after the carbon deposition the end of the carbon deposition film is modified by etching the carbon deposition film using a plasma.
    Type: Application
    Filed: December 12, 2002
    Publication date: July 31, 2003
    Inventors: Hiroshi Ohki, Tsunaki Tsunesada, Masao Urayama, Takashi Kyotani, Keitarou Matsui, Akira Tomita