Abstract: It is an object of the present invention to provide an electrode capable of maintaining superior capacity retention without destruction of an electrode structure, even in the case of using an active material including silicon.

Abstract: It is an object of the present invention to provide an electrode capable of maintaining superior capacity retention without destruction of an electrode structure, even in the case of using an active material including silicon.

Abstract: It is an object of the present invention to provide an electrode capable of maintaining superior capacity retention without destruction of an electrode structure, even in the case of using an active material including silicon.

Abstract: A cleaning agent is provided for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. A cleaning agent for a semiconductor substrate is to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7.

Abstract: It is a subject of the present invention to provide a cleaning agent for a substrate having a metal wiring, and a cleaning method for a semiconductor substrate comprising that the cleaning agent is used, by which following effects (1) to (5) are obtained, in a cleaning process after chemical mechanical polishing (CMP) in a manufacturing process of a semiconductor device. (1) Residues of fine particles (polishing agents) used in the CMP process, fine particles (metal particles) derived from a polished metal, an anticorrosive, and the like, can be removed sufficiently. (2) A coating film (protective film: oxidation resistant film) on a surface of the metal wiring, containing a complex between an anticorrosive, such as benzotriazole or quinaldic acid, and a surface metal of the metal wiring, formed in the CMP process, can be removed (stripped) sufficiently. (3) An oxide film containing a metal oxide can be formed after removal (stripping) of the coating film.

Abstract: The subject of the present invention is to provide a method for deuteration, which can obtain a compound having an aromatic ring and/or a heterocyclic ring at an improved deuteration ratio. The present invention relates to a method for deuteration of a compound having an aromatic ring and/or a heterocyclic ring, comprising reacting the compound having an aromatic ring and/or a heterocyclic ring with a heavy hydrogen source in the presence of an activated mixed catalyst of not less than two kinds of catalysts selected from among a palladium catalyst, a platinum catalyst, a rhodium catalyst, an iridium catalyst, a ruthenium catalyst, a nickel catalyst and a cobalt catalyst.

Abstract: It is an object of the present invention to provide an electrode capable of maintaining superior capacity retention without destruction of an electrode structure, even in the case of using an active material including silicon.

Abstract: A cleaning agent is provided for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. A cleaning agent for a semiconductor substrate is to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7.

Abstract: The present invention relates to a method for deuteration of a compound having an aromatic ring, using an activated catalyst, and the method comprises reacting a compound having an aromatic ring with heavy hydrogen source in the presence of an activated catalyst selected from a platinum catalyst, a rhodium catalyst, a ruthenium catalyst, a nickel catalyst and a cobalt catalyst.

Abstract: The present invention relates to a method for deuteration of a heterocyclic ring, which comprises subjecting a compound having a heterocyclic ring to sealed refluxing state in a deuterated solvent in the presence of an activated catalyst selected form a palladium catalyst, a platinum catalyst, a rhodium catalyst, a ruthenium catalyst, a nickel catalyst and a cobalt catalyst. In accordance with a method of the present invention, a hydrogen atom belonging to a heterocyclic ring of a compound having a heterocyclic ring can be very efficiently deuterated because temperature of deuteration reaction can be maintained at higher than boiling point of the solvent. Further, a method for deuteration of the present invention can be applied widely to deuteration of various compounds having a heterocyclic ring which are liable to decomposition under supercritical conditions or acidic conditions, leading to industrial and efficient deuteration of a compound having a heterocyclic ring.

Abstract: A novel compound represented by a formula [1] wherein R1 and R2 respectively represent a light or heavy hydrogen atom, R3 represents a light or heavy hydrogen atom or a methyl group in which tree hydrogen atoms are respectively light or heavy hydrogen atoms, and R4 is a norbornyl group provided that four or more hydrogen atoms in the norbornyl group are heavy hydrogen atoms; and a novel polymer produced by polymerization of a composition comprising the compound are disclosed.

Abstract: The subject of the present invention is to provide a method for deuteration, which can obtain a compound having an aromatic ring and/or a heterocyclic ring at an improved deuteration ratio. The present invention relates to a method for deuteration of a compound having an aromatic ring and/or a heterocyclic ring, comprising reacting the compound having an aromatic ring and/or a heterocyclic ring with a heavy hydrogen source in the presence of an activated mixed catalyst of not less than two kinds of catalysts selected from among a palladium catalyst, a platinum catalyst, a rhodium catalyst, an iridium catalyst, a ruthenium catalyst, a nickel catalyst and a cobalt catalyst.

Abstract: The present invention relates to a novel bisimide compound useful as an acid generator for a chemically amplified resist composition used in manufacturing of semiconductor element and the like or a raw material for synthesizing heat resistant polymers, an acid generator and a resist composition using said compound and a method for pattern formation using said composition, and further relates to a synthetic n intermediate for a bisimide compound and a bis(N-hydroxy)phthalimide compound useful as an intermediate for a functional compound such as a heat resistant polymer or photosensitive material, and provides a bisimide compound shown by the general formula [1]: (wherein R and A1 are as defined in claim 1).

Abstract: The object of the present invention is to provide a method for efficiently and industrially deuterating a haloacrylic acid or salt thereof.

Abstract: The object of the present invention is to provide a polyimide compound useful as a raw material of a polymer for an optical waveguide that has excellent transparency and heat resistance, low moisture absorption, a small optical transmission loss, a high refractive index and good adhesion to a base material or a substrate.

Abstract: The present invention relates to a resist composition for practical use with high resolution, high sensitivity, superior pattern profile and no outgas in energy irradiation under high vacuum, suitable to an ultra-fine processing technology represented by use of electron beam and the like, and provides: (1) a resist composition comprising at least one kind of polymer containing, as components thereof, a monomer unit represented by the following general formula [1]: a monomer unit represented by the following general formula [2]: and a monomer unit represented by the following general formula [3]: at least one kind of compound to generate an acid by irradiation of radioactive ray, represented by the following general formula [4]; an organic basic compound; and a solvent, (2) the resist composition in accordance with (1), further containing a polymer unit represented by the following general formula [13]: and, (3) the resist composition in accordance with (1) and (2), further containing a comp

Abstract: The present invention relates to a method for deuteration of a compound having an aromatic ring, using an activated catalyst, and the method comprises reacting a compound having an aromatic ring with heavy hydrogen source in the presence of an activated catalyst selected from a platinum catalyst, a rhodium catalyst, a ruthenium catalyst, a nickel catalyst and a cobalt catalyst.

Abstract: A novel compound represented by a formula [1] wherein R1 and R2 respectively represent a light or heavy hydrogen atom, R3 represents a light or heavy hydrogen atom or a methyl group in which tree hydrogen atoms are respectively light or heavy hydrogen atoms, and R4 is a norbornyl group provided that four or more hydrogen atoms in the norbornyl group are heavy hydrogen atoms; and a novel polymer produced by polymerization of a composition comprising the compound are disclosed.

Abstract: A novel compound represented by a formula [1] wherein R1 and R2 respectively represent a heavy or light hydrogen atom, R3 represents a heavy or light hydrogen atom or a methyl group in which three hydrogen atoms are respectively heavy or light hydrogen atoms, R4 represents a condensed ring group composed of a norbornane ring and a C5-7 hydrocarbon ring provided that at least one hydrogen atom contained in the condensed ring group is a heavy hydrogen atom; and a novel polymer produced by polymerization of a composition comprising the compound are disclosed.

Abstract: The present invention relates to a hybrid type onium salt having an iodonium salt and a sulfonium salt in the molecule, Useful, for example, as a cationic type photopolymerization initiator and an acid generator for a chemically amplified resist and provides a hybrid type onium salt shown by the general formula [1]: and R4 is an alkyl group, an alkenyl group, an aryl group or an aralkyl group, which may have a substituent selected from the group consisting of a halogen atom, an alkyl group, a haloalkyl group, an aryl group, an alkoxy group, an aryloxy group, an alkylthio group, an arylthio group and an amino group which may be substituted or a group shown by the general formula [2]: and a polymerization initiator or an acid generator, comprising said onium salt.