Abstract: The present invention relates to a plasma processor in which a sample such as semiconductor substrate is processed with a plasma under a cooled state. An electric insulator is interposed between a sample holder for arranging the sample thereon and a cooling container for cooling the sample holder, so as to electrically insulate them, whereby a bias voltage applied to the sample holder and a voltage for generating the plasma can be prevented from leaking, so as to stabilize the process. In addition, the insulator is held in close contact with the sample holder and the cooling container through members of a thermal conductor, whereby the occurrence of non-uniformity during the processing of the sample and the occurrence of a dispersion in the qualities of processed samples among sample lots or among processors can be suppressed.

Abstract: The present invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises the steps of forming a treating gas into a plasma under reduced pressure, utilizing the plasma to treat a specimen cooled to a low temperature less than 0.degree. C.

Abstract: A vacuum processing unit and apparatus comprises a buffer chamber that can be evacuated, a processing chamber that can be communicated with said buffer chamber a first sample carrier installed in said buffer chamber, a vacuum opening/closing device provided in the buffer chamber to correspond to the first sample carrier, a vacuum prechamber provided for the buffer chamber via the vacuum opening/closing device, a second sample carrier which carries the sample between the vacuum prechamber and the first sample carrier via the vacuum opening/closing device, and a third sample carrier which carries the sample between said first sample carrier and the processing chamber. The vacuum processing units can be connected in groups via vacuum opening/closing devices provided for the buffer chambers in locations corresponding to the end of the first sample carriers therein. The number of connected processing chambers can be freely changed to meet a change in the process or the manufacturing line.

Abstract: This invention relates to a method and apparatus for controlling temperature of a sample and is intended to prevent a sample from being deformed by the pressure of a heat transmission gas by mounting and fixing the sample being mounted and processed in a vacuum on and to the sample stand and supplying the heat transmission gas to the gap between the under surface of the sample thus fixed and the sample stand; effectively control the temperature of the sample being processed in a vacuum by limiting the size of the gap between the under surface of the sample and the sample stand; and make the heat transmission gas least affect the process by limiting the flow of the heat transmission gas in the vacuum process chamber.