Patents by Inventor Tsunehiro Nishi

Tsunehiro Nishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20010051316
    Abstract: A polymer comprising units of formulas (1) and (2) and having a Mw of 1,000-500,000 is provided. R1 is H, CH3 or CH2CO2R3, R2 is H, CH3 or CO2R3, R3 is alkyl, R4 is halogen or acyloxy, alkoxycarbonyloxy or alkylsulfonyloxy group which may be substituted with halogen, R5 is H or alkyl, R6 is an acid labile group, Z is a single bond or a divalent hydrocarbon group, k is 0 or 1, and W is —O— or —(NR)— wherein R is H or alkyl. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV rays.
    Type: Application
    Filed: April 26, 2001
    Publication date: December 13, 2001
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsunehiro Nishi, Mutsuo Nakashima, Seiichiro Tachibana, Takeshi Kinsho, Koji Hasegawa, Takeru Watanabe, Jun Hatakeyama
  • Publication number: 20010051742
    Abstract: Ester compounds of formula (1) are useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography.
    Type: Application
    Filed: April 26, 2001
    Publication date: December 13, 2001
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Koji Hasegawa, Takeru Watanabe, Takeshi Kinsho, Mutsuo Nakashima, Seiichiro Tachibana, Tsunehiro Nishi, Jun Hatakeyama
  • Publication number: 20010051741
    Abstract: Ester compounds of formula (1) are useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography.
    Type: Application
    Filed: April 26, 2001
    Publication date: December 13, 2001
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takeru Watanabe, Koji Hasegawa, Takeshi Kinsho, Mutsuo Nakashima, Seiichiro Tachibana, Tsunehiro Nishi, Jun Hatakeyama
  • Publication number: 20010044071
    Abstract: An ester compound of the following formula (1) is provided.
    Type: Application
    Filed: April 19, 2001
    Publication date: November 22, 2001
    Applicant: Shin-Etsu Chemical Co., Ltd
    Inventors: Koji Hasegawa, Tsunehiro Nishi, Takeshi Kinsho, Takeru Watanabe, Mutsuo Nakashima, Seiichiro Tachibana, Jun Hatakeyama
  • Patent number: 6312867
    Abstract: A novel ester compound having an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl group as the protective group is provided as well as a polymer comprising units of the ester compound. The polymer is used as a base resin to formulate a resist composition having a higher sensitivity, resolution and etching resistance than conventional resist compositions.
    Type: Grant
    Filed: November 1, 1999
    Date of Patent: November 6, 2001
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takeshi Kinsho, Tsunehiro Nishi, Hideshi Kurihara, Koji Hasegawa, Takeru Watanabe, Osamu Watanabe, Mutsuo Nakashima, Takanobu Takeda, Jun Hatakeyama
  • Publication number: 20010036593
    Abstract: A chemical amplification type resist composition uses as the base resin a polymer having a molecular weight dispersity of 1.0 to 1.5 which is a polymer comprising recurring units of formula (1) and recurring units of formula (2) or a polymer comprising recurring units of formula (2) wherein R1 is alkyl, alkoxyalkyl, acetyl or carbonylalkoxy, 0<p/(p+q)≦1, R2 is hydrogen or methyl, and R3 is a tertiary hydrocarbon group of 4 to 30 carbon atoms. By virtue of the narrow dispersity effect of the polymer, the resist composition is improved in resolution as compared with prior art base resins having a wide dispersity. Advantages including a high resolution, good pattern profile and storage stability are obtained.
    Type: Application
    Filed: January 17, 2001
    Publication date: November 1, 2001
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takanobu Takeda, Osamu Watanabe, Jun Watanabe, Jun Hatakeyama, Tsunehiro Nishi, Takeshi Kinsho
  • Publication number: 20010033990
    Abstract: A resist composition contains a base resin, a photoacid generator, and a solvent. The photoacid generator is a sulfonium salt of formula (1).
    Type: Application
    Filed: March 20, 2001
    Publication date: October 25, 2001
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Youichi Ohsawa, Tsunehiro Nishi, Jun Watanabe
  • Publication number: 20010031424
    Abstract: A polymer comprising recurring units of formula (1) and having a Mw of 1,000-500,000 is provided.
    Type: Application
    Filed: March 5, 2001
    Publication date: October 18, 2001
    Inventors: Tsunehiro Nishi, Koji Hasegawa, Takeru Watanabe, Takeshi Kinsho, Jun Hatakeyama
  • Publication number: 20010026904
    Abstract: A polymer comprising recurring units of formula (1) and having a Mw of 1,000-500,000 is provided.
    Type: Application
    Filed: March 5, 2001
    Publication date: October 4, 2001
    Inventors: Tsunehiro Nishi, Koji Hasegawa, Takeru Watanabe, Takeshi Kinsho, Jun Hatakeyama
  • Patent number: 6284429
    Abstract: A novel ester compound having an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl group as the protective group is provided as well as a polymer comprising units of the ester compound. The polymer is used as a base resin to formulate a resist composition having a higher sensitivity, resolution and etching resistance than conventional resist compositions.
    Type: Grant
    Filed: February 24, 2000
    Date of Patent: September 4, 2001
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takeshi Kinsho, Tsunehiro Nishi, Hideshi Kurihara, Mutsuo Nakashima, Koji Hasegawa, Takeru Watanabe
  • Patent number: 6280898
    Abstract: A novel lactone-containing compound is provided as well as a polymer comprising units of the compound. The polymer is used as a base resin to formulate a resist composition having a high sensitivity, resolution and etching resistance.
    Type: Grant
    Filed: September 24, 1999
    Date of Patent: August 28, 2001
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Koji Hasegawa, Tsunehiro Nishi, Takeshi Kinsho, Jun Hatakeyama, Osamu Watanabe
  • Patent number: 6274286
    Abstract: A chemically amplified positive resist composition comprising at least one basic compound of the following general formula (1) or (2): wherein R1, R2, R3, R7, and R8 are independently normal, branched or cyclic alkylene groups having 1 to 20 carbon atoms, R4, R5, R6, R9, and R10 are independently hydrogen, alkyl groups having 1 to 20 carbon atoms or amino groups, R4 and R5, R5 and R6, R4 and R6, or R8, R5 and R5, and R9 and R10, taken together, may form a ring, letters k, m and n are integers of 0 to 20, with the proviso that hydrogen is excluded from R4, R5, R6, R9 and R10 when k, m or n is equal to 0. The resist compositions of the present invention are effective for preventing resist films from thinning and for increasing the focus margin of an isolated pattern.
    Type: Grant
    Filed: June 26, 1998
    Date of Patent: August 14, 2001
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Tsunehiro Nishi, Takeshi Nagata, Shigehiro Nagura
  • Patent number: 6147249
    Abstract: A novel ester compound having an alkylcycloalkyl or alkylcycloalkenyl group as the protective group is provided as well as a polymer comprising units of the ester compound. The polymer is used as a base resin to formulate a resist composition having a higher sensitivity, resolution and etching resistance than conventional resist compositions.
    Type: Grant
    Filed: May 10, 1999
    Date of Patent: November 14, 2000
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takeru Watanabe, Takeshi Kinsho, Tsunehiro Nishi, Mutsuo Nakashima, Koji Hasegawa, Jun Hatakeyama
  • Patent number: 6048661
    Abstract: Provided are polymeric compounds which, when used as base resins in resist materials, can yield chemical resist materials having high sensitivity, high resolution, a high exposure latitude, and good process adaptability, exhibiting excellent resistance to plasma etching, and giving resist patterns having high thermal resistance, as well as chemically amplified positive type resist materials using such polymeric compounds as base resins. These chemically amplified positive type resist materials use a base resin comprising a polymeric compound having a weight-average molecular weight of 1,000 to 500,000 and having one or more hydroxyl and/or carboxyl groups in the molecule, part or all of the hydrogen atoms of the hydroxyl and/or carboxyl groups being replaced by groups of the following general formula ##STR1## and additionally contain an acid generator, a dissolution inhibitor, a basic compound, and an aromatic compound having a group of the formula .tbd.C--COOH.
    Type: Grant
    Filed: March 2, 1998
    Date of Patent: April 11, 2000
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsunehiro Nishi, Jun Hatakeyama, Shigehiro Nagura, Toshinobu Ishihara
  • Patent number: 6030746
    Abstract: Di- or triphenyl monoterpene hydrocarbon derivatives of formula (1) are novel. ##STR1## X is a di- or trivalent monoterpene hydrocarbon group, R.sup.1 to R.sup.3 are hydrogen or an alkyl, alkoxy, alkoxyalkyl, alkenyl or aryl group, R.sup.4 is hydrogen or an acid labile group, at least one R.sup.4 being an acid labile group, letter n is an integer of 1-5, j, k and m are integers of 0-4, n+j+k+m=5, and p is 2 or 3. When used as a dissolution rate regulator, the compound of formula (1) exerts remarkably enhanced dissolution inhibitory effect and minimized light absorption in the deep-UV region. A chemically amplified positive resist composition having the compound of formula (1) blended therein is highly sensitive to actinic radiation such as deep-UV radiation, electron beam and X-ray, especially KrF excimer laser light, and has improved sensitivity, resolution and plasma etching resistance.
    Type: Grant
    Filed: April 1, 1997
    Date of Patent: February 29, 2000
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takeshi Nagata, Satoshi Watanabe, Tsunehiro Nishi, Jun Hatakeyama, Shigehiro Nagura, Toshinobu Ishihara
  • Patent number: 6027854
    Abstract: A polymer comprising recurring units of formula (1) is provided wherein some hydrogen atoms of phenolic hydroxyl groups and/or alcoholic hydroxyl groups and/or carboxyl groups are replaced by acid labile groups. The polymer is crosslinked with a crosslinking group having a C--O--C linkage resulting from reaction of some of the remaining alcoholic hydroxyl groups and/or carboxyl groups with an alkenyl ether compound or halogenated alkyl ether compound. The amount of the acid labile group and the crosslinking group combined is on the average from more than 0 mol % to 80 mol % of the entirety of the phenolic hydroxyl group, alcoholic hydroxyl group and carboxyl group. The polymer has Mw of 1,000-500,000. ##STR1## R.sup.1 is H or methyl, R.sup.2 is C.sub.1 -C.sub.8 alkyl, R.sup.3 is a divalent C.sub.1 -C.sub.18 hydrocarbon group which may have a hetero atom, R.sup.4 and R.sup.5 are H or monovalent C.sub.1 -C.sub.18 hydrocarbon groups which may have a hetero atom, x and y are integers satisfying x+y.ltoreq.
    Type: Grant
    Filed: February 27, 1998
    Date of Patent: February 22, 2000
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsunehiro Nishi, Osamu Watanabe, Satoshi Watanabe, Shigehiro Nagura, Toshinobu Ishihara
  • Patent number: 5856561
    Abstract: Novel bisphenol carboxylic acid tertiary ester derivatives having two aromatic ether groups and an ester group which are all replaced by acid labile groups are provided. The derivatives are used as a dissolution inhibitor in a chemically amplified positive resist composition comprising an organic solvent, an alkali soluble resin, and a photo-acid generator. Since the dissolution inhibitor has a highly reactive acetal group as an acid labile group, its coupling-off rapidly takes place after exposure. The dissolution inhibitor itself is less alkali soluble and its acid decomposition product is a phenol derivative having a carboxylic acid group with high alkali solubility, leading to a high dissolution contrast.
    Type: Grant
    Filed: September 17, 1996
    Date of Patent: January 5, 1999
    Assignees: Shin-Etsu Chemical Co., Ltd., Nippon Telegraph and Telephone Corp.
    Inventors: Takesi Nagata, Satoshi Watanabe, Katsuya Takemura, Tsunehiro Nishi, Shigehiro Nagura, Akinobu Tanaka, Yoshio Kawai