Patents by Inventor Tsunehiro TAKEUCHI

Tsunehiro TAKEUCHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220416143
    Abstract: A thermoelectric conversion material includes a base material that is a semiconductor having Si and Ge as constituent elements, a first additive element that is different from the constituent elements, has a vacant orbital in a d or f orbital located inside an outermost shell thereof, and forms a first additional level in a forbidden band of the base material, and oxygen. The oxygen content ratio is 6 at % or less.
    Type: Application
    Filed: June 19, 2020
    Publication date: December 29, 2022
    Applicants: Sumitomo Electric Industries, Ltd., Toyota School Foundation
    Inventors: Masahiro ADACHI, Yoshiyuki YAMAMOTO, Tsunehiro TAKEUCHI
  • Publication number: 20220399485
    Abstract: A thermoelectric conversion element includes a thermoelectric conversion material portion having a compound semiconductor composed of first base material element A and second base material element B and represented by Ax-cBy with value of x being smaller by c with respect to a compound AxBy according to a stoichiometric ratio, a first electrode disposed in contact with the thermoelectric conversion material portion, and a second electrode disposed in contact with the thermoelectric conversion material portion and apart from the first electrode. An A-B phase diagram includes a first region corresponding to low temperature phase, second region corresponding to high temperature phase, and third region corresponding to coexisting phase, sandwiched between the low temperature phase and the high temperature phase, in which the low and high temperature phases coexist. A temperature at a boundary between the first region and the third region changes monotonically with a change in c.
    Type: Application
    Filed: June 24, 2020
    Publication date: December 15, 2022
    Applicants: Sumitomo Electric Industries, Ltd., Toyota School Foundation
    Inventors: Masahiro ADACHI, Yoshiyuki YAMAMOTO, Tsunehiro TAKEUCHI
  • Patent number: 11462670
    Abstract: A thermoelectric conversion material includes: a base material that is a semiconductor; and an additive element that differs from an element constituting the base material. An additional band formed of the additive element is present within a forbidden band of the base material. A density of states of the additional band has a ratio of greater than or equal to 0.1 relative to a maximum value of a density of states of a valence band adjacent to the forbidden band of the base material.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: October 4, 2022
    Assignees: Sumitomo Electric Industries, Ltd., Toyota School Foundation
    Inventors: Masahiro Adachi, Makoto Kiyama, Yoshiyuki Yamamoto, Tsunehiro Takeuchi
  • Publication number: 20220310897
    Abstract: A thermoelectric conversion material is represented by a composition formula Ag2-x?xS, where ? is one selected from among Ni, V, and Ti. The value of x is greater than 0 and smaller than 0.6.
    Type: Application
    Filed: July 15, 2020
    Publication date: September 29, 2022
    Applicants: Sumitomo Electric Industries, Ltd., Toyota School Foundation
    Inventors: Masahiro ADACHI, Yoshiyuki YAMAMOTO, Tsunehiro TAKEUCHI
  • Publication number: 20220310898
    Abstract: A thermoelectric conversion material is represented by a composition formula Ag2S(1-x)Sex. The value of x is not smaller than 0.2 and not greater than 0.95.
    Type: Application
    Filed: June 25, 2020
    Publication date: September 29, 2022
    Applicants: Sumitomo Electric Industries, Ltd., Toyota School Foundation
    Inventors: Masahiro ADACHI, Yoshiyuki YAMAMOTO, Tsunehiro TAKEUCHI
  • Publication number: 20220285602
    Abstract: A thermoelectric conversion material is constituted of a semiconductor that contains a constituent element and an additive element having a difference of 1 in the number of electrons in an outermost shell from the constituent element, the additive element having a concentration of not less than 0.01 at % and not more than 30 at %. The semiconductor has a microstructure including an amorphous phase and a granular crystal phase dispersed in the amorphous phase. The amorphous phase includes a first region in which the concentration of the additive element is a first concentration, and a second region in which the concentration of the additive element is a second concentration lower than the first concentration. The first concentration and the second concentration have a difference of not less than 15 at % and not more than 25 at % therebetween.
    Type: Application
    Filed: September 16, 2020
    Publication date: September 8, 2022
    Applicants: Sumitomo Electric Industries, Ltd., Toyota School Foundation
    Inventors: Kotaro HIROSE, Masahiro ADACHI, Tsunehiro TAKEUCHI
  • Publication number: 20220278263
    Abstract: A thermoelectric conversion material is represented by a composition formula Ag2S(1-x)Sex, where x has a value of greater than 0.01 and smaller than 0.6.
    Type: Application
    Filed: August 6, 2020
    Publication date: September 1, 2022
    Applicants: Sumitomo Electric Industries, Ltd., Toyota School Foundation
    Inventors: Kotaro HIROSE, Masahiro ADACHI, Yoshiyuki YAMAMOTO, Tsunehiro TAKEUCHI
  • Patent number: 11362255
    Abstract: Provided is a heat flow switching element which has a larger change in a thermal conductivity and has excellent thermal responsiveness. The heat flow switching element includes an N-type semiconductor layer, an insulator layer laminated on the N-type semiconductor layer, a P-type semiconductor layer laminated on the insulator layer, an N-side electrode connected to the N-type semiconductor layer, and a P-side electrode connected to the P-type semiconductor layer. In particular, the insulator layer is formed of a dielectric. Also, a plurality of N-type semiconductor layers and P-type semiconductor layers are laminated alternately with the insulator layer interposed therebetween.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: June 14, 2022
    Assignees: MITSUBISHI MATERIALS CORPORATION, TOYOTA SCHOOL FOUNDATION
    Inventors: Toshiaki Fujita, Koya Arai, Tsunehiro Takeuchi, Takuya Matsunaga
  • Publication number: 20210265550
    Abstract: A thermoelectric conversion material is composed of a compound semiconductor including a plurality of base material elements, and includes: an amorphous phase; and crystal phases having an average grain size of more than or equal to 5 nm, each of the crystal phases being in a form of a grain. The plurality of base material elements include a specific base material element that causes an increase of a band gap by increasing a concentration of the specific base material element. An atomic concentration of the specific base material element included in the crystal phases with respect to a whole of the plurality of base material elements included in the crystal phases is higher than an atomic concentration of the specific base material element included in the compound semiconductor with respect to a whole of the plurality of base material elements included in the compound semiconductor.
    Type: Application
    Filed: March 26, 2019
    Publication date: August 26, 2021
    Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., TOYOTA SCHOOL FOUNDATION
    Inventors: Kotaro HIROSE, Masahiro ADACHI, Takashi MATSUURA, Yoshiyuki YAMAMOTO, Tsunehiro TAKEUCHI
  • Publication number: 20210249577
    Abstract: A substrate of which at least an upper surface is formed of an insulating material, an N-type semiconductor layer, a P-type semiconductor layer, and an insulator layer are provided, one semiconductor layer of the N-type semiconductor layer and the P-type semiconductor layer is formed on the substrate, the insulator layer is formed on the one semiconductor layer, and the other semiconductor layer of the N-type semiconductor layer and the P-type semiconductor layer is formed on the insulator layer. In this way, since electric charges induced by an external voltage are generated both at and near an interface between the N-type semiconductor layer and the insulator layer and at and near an interface between the P-type semiconductor layer and the insulator layer, an amount of the generated charge increases, and thus a larger variation in thermal conductivity and high thermal responsiveness can be obtained.
    Type: Application
    Filed: March 26, 2020
    Publication date: August 12, 2021
    Inventors: Toshiaki Fujita, Koya Arai, Tsunehiro Takeuchi, Takuya Matsunaga
  • Publication number: 20210249581
    Abstract: Provided is a heat flow switching element which has a larger change in a thermal conductivity and has excellent thermal responsiveness. The heat flow switching element includes an N-type semiconductor layer, an insulator layer laminated on the N-type semiconductor layer, a P-type semiconductor layer laminated on the insulator layer, an N-side electrode connected to the N-type semiconductor layer, and a P-side electrode connected to the P-type semiconductor layer. In particular, the insulator layer is formed of a dielectric. Also, a plurality of N-type semiconductor layers and P-type semiconductor layers are laminated alternately with the insulator layer interposed therebetween.
    Type: Application
    Filed: March 26, 2020
    Publication date: August 12, 2021
    Inventors: Toshiaki Fujita, Koya Arai, Tsunehiro Takeuchi, Takuya Matsunaga
  • Publication number: 20210167270
    Abstract: A thermoelectric conversion element includes: a thermoelectric conversion material portion composed of a material having a band gap; a first electrode disposed in contact with the thermoelectric conversion material portion; a second electrode disposed in contact with the thermoelectric conversion material portion and disposed to be separated from the first electrode; and a sealing portion that seals the thermoelectric conversion material portion. A partial pressure of oxygen in a region surrounding the thermoelectric conversion material portion is maintained by the sealing portion so as to be lower than a partial pressure of oxygen in an external air.
    Type: Application
    Filed: July 4, 2019
    Publication date: June 3, 2021
    Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., TOYOTA SCHOOL FOUNDATION
    Inventors: Masahiro ADACHI, Yoshiyuki YAMAMOTO, Tsunehiro TAKEUCHI
  • Publication number: 20210091289
    Abstract: A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.
    Type: Application
    Filed: December 28, 2018
    Publication date: March 25, 2021
    Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., TOYOTA SCHOOL FOUNDATION
    Inventors: Masahiro ADACHI, Kotaro HIROSE, Makoto KIYAMA, Takashi MATSUURA, Yoshiyuki YAMAMOTO, Tsunehiro TAKEUCHI, Shunsuke NISHINO
  • Publication number: 20200403136
    Abstract: A thermoelectric material element includes: a thermoelectric material portion composed of a thermoelectric material that includes a first crystal phase and a second crystal phase during an operation, the second crystal phase being different from the first crystal phase; a first electrode disposed in contact with the thermoelectric material portion; and a second electrode disposed in contact with the thermoelectric material portion and disposed to be separated from the first electrode. During the operation, the thermoelectric material portion includes a first temperature region having a first temperature, and a second temperature region having a second temperature lower than the first temperature of the first temperature region. A ratio of the first crystal phase to the second crystal phase in the first temperature region is larger than a ratio of the first crystal phase to the second crystal phase in the second temperature region.
    Type: Application
    Filed: February 15, 2019
    Publication date: December 24, 2020
    Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., TOYOTA SCHOOL FOUNDATION
    Inventors: Masahiro ADACHI, Makoto KIYAMA, Takashi MATSUURA, Yoshiyuki YAMAMOTO, Do-Gyun BYEON, Tsunehiro TAKEUCHI
  • Publication number: 20200078895
    Abstract: A coolant supply device includes a supply pump configured to supply a coolant of a clean tank to a machine tool, a recovering route configured to return the coolant from the machine tool to a dirty tank, a cyclone filter arranged on a coupling route and configured to separate the coolant into dirty liquid and a clean liquid, and a container connected to a dirty liquid outlet of the filter and configured to accumulate the sludge. The coolant supply device further includes a sensing unit configured to sense the amount of accumulation of the sludge in the container, and a controller configured to perform control based on a sensing result of the sensing unit.
    Type: Application
    Filed: September 7, 2019
    Publication date: March 12, 2020
    Inventor: Tsunehiro TAKEUCHI
  • Publication number: 20190214538
    Abstract: A thermoelectric conversion material includes: a base material that is a semiconductor; and an additive element that differs from an element constituting the base material. An additional band formed of the additive element is present within a forbidden band of the base material. A density of states of the additional band has a ratio of greater than or equal to 0.1 relative to a maximum value of a density of states of a valence band adjacent to the forbidden band of the base material.
    Type: Application
    Filed: August 29, 2017
    Publication date: July 11, 2019
    Applicants: Sumitomo Electric Industries, Ltd., Toyota School Foundation
    Inventors: Masahiro ADACHI, Makoto KIYAMA, Yoshiyuki YAMAMOTO, Tsunehiro TAKEUCHI
  • Publication number: 20170175232
    Abstract: A thermal insulation material containing an Al—Cu—Fe-based alloy, wherein at least part of the Al—Cu—Fe-based alloy comprises a quasicrystalline phase, wherein the Al—Cu—Fe-based alloy contains one or more transition elements selected from the group of Ru, Rh, Pd, Ag, Os, Jr, Pt, and Au, and wherein the total of the transition elements is from 0.25 to 0.75 atom % when the whole of the Al—Cu—Fe-based alloy is 100 atom %.
    Type: Application
    Filed: December 1, 2016
    Publication date: June 22, 2017
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota School Foundation
    Inventors: Taizo YOSHINAGA, Ryosuke MAEKAWA, Yohei KINOSHITA, Takeo YAMAGUCHI, Hideo YAMASHITA, Tsunehiro TAKEUCHI