Abstract: A light emitting diode, comprising: a transparent substrate; a wiring layer; and a semiconductor light emitting element structure part between the transparent substrate and the wiring layer, the semiconductor light emitting element structure part further comprising: a semiconductor light emitting layer; a transparent conductive layer provided on the wiring layer side of the semiconductor light emitting layer; a transparent insulating film; a metal reflection layer; and a first electrode part and a second electrode part provided on the wiring layer side of the transparent insulating film, to be electrically connected to the wiring layer, wherein the first electrode part is electrically connected to the first semiconductor layer via a first contact part which is provided to pass through the transparent insulating film, and the second electrode part is electrically connected to the second semiconductor layer by a second contact part provided to pass through the transparent insulating film, the transparent conduc

Abstract: A light emitting diode, comprising: a wiring layer; and a semiconductor light emitting element provided on the wiring layer, the semiconductor light emitting element further comprising: a semiconductor light emitting layer; a transparent conductive layer; a metal reflection layer; a transparent insulating film; and a first electrode part and a second electrode part provided on the wiring layer side of the transparent insulating film with an isolating region interposed between them, to be electrically connected to the wiring layer, wherein the first electrode part is electrically connected to the first semiconductor layer by a first contact part, and the second electrode part is electrically connected to the second semiconductor layer by a second contact part which is provided to pass through the transparent insulating film, the transparent conductive layer, the first semiconductor layer, and the active layer.

Abstract: A light emitting device includes a supporting substrate, a first conductivity type layer of a first conductivity type provided on the supporting substrate, an active layer provided on the first conductivity type layer, a second conductivity type layer of a second conductivity type provided on the active layer, a first electrode being in contact with a part of the surface of the first conductivity type layer, and a second electrode being in contact with a part of the surface of the second conductivity type layer. The first electrode is in contact with a surface of the first conductivity type layer, and the surface is different from a surface of the first conductivity type layer corresponding to a region located directly above or below the active layer.

Abstract: A light emitting diode, comprising: a transparent substrate; a wiring layer; and a semiconductor light emitting element structure part between the transparent substrate and the wiring layer, the semiconductor light emitting element structure part further comprising: a semiconductor light emitting layer; a transparent conductive layer provided on the wiring layer side of the semiconductor light emitting layer; a transparent insulating film; a metal reflection layer; and a first electrode part and a second electrode part provided on the wiring layer side of the transparent insulating film, to be electrically connected to the wiring layer, wherein the first electrode part is electrically connected to the first semiconductor layer via a first contact part which is provided to pass through the transparent insulating film, and the second electrode part is electrically connected to the second semiconductor layer by a second contact part provided to pass through the transparent insulating film, the transparent conduc

Abstract: A light emitting diode is provided, comprising: a substrate; a metal wiring layer disposed on the substrate; alight emitting element provided on the metal wiring layer; wherein the light emitting element comprises: a semiconductor light emitting layer having a first semiconductor layer, an active layer, and a second semiconductor layer formed from the substrate side sequentially; a transparent insulating layer provided on the substrate side of the semiconductor light emitting layer; a first electrode part and a second electrode part provided on the substrate side of the transparent insulating layer in such a manner as being separated from each other, and joined to the metal wiring layer; a first contact part provided so as to pass through the transparent insulating layer and electrically connecting the first electrode part and the first semiconductor layer; and a second contact part provided so as to pass through the transparent insulating layer, the first semiconductor layer, and the active layer, and electr

Abstract: A light emitting diode, comprising: a wiring layer; and a semiconductor light emitting element provided on the wiring layer, the semiconductor light emitting element further comprising: a semiconductor light emitting layer; a transparent conductive layer; a metal reflection layer; a transparent insulating film; and a first electrode part and a second electrode part provided on the wiring layer side of the transparent insulating film with an isolating region interposed between them, to be electrically connected to the wiring layer, wherein the first electrode part is electrically connected to the first semiconductor layer by a first contact part, and the second electrode part is electrically connected to the second semiconductor layer by a second contact part which is provided to pass through the transparent insulating film, the transparent conductive layer, the first semiconductor layer, and the active layer.

Abstract: A light emitting diode is provided, comprising: a substrate; a metal wiring layer disposed on the substrate; alight emitting element provided on the metal wiring layer; wherein the light emitting element comprises: a semiconductor light emitting layer having a first semiconductor layer, an active layer, and a second semiconductor layer formed from the substrate side sequentially; a transparent insulating layer provided on the substrate side of the semiconductor light emitting layer; a first electrode part and a second electrode part provided on the substrate side of the transparent insulating layer in such a manner as being separated from each other, and joined to the metal wiring layer; a first contact part provided so as to pass through the transparent insulating layer and electrically connecting the first electrode part and the first semiconductor layer; and a second contact part provided so as to pass through the transparent insulating layer, the first semiconductor layer, and the active layer, and electr

Abstract: A light emitting device has a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a narrow electrode having a current feeding part provided on a region of a part above of the first semiconductor layer for supplying an electric current from outside to the semiconductor multilayer structure, and a narrow electrode provided adjacent to the current feeding part for reflecting a light emitted from the active layer, and a surface center electrode part electrically connected to the narrow electrode, and provided above the first semiconductor layer via a transmitting layer for transmitting the light.

Abstract: A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting portion formed on the second conductivity type cladding layer and the first current-blocking portion; a lower electrode formed on the back side of the substrate, a light-reflecting layer formed between the substrate and the light-emitting layer; a partial electrode formed on the surface of the light-reflecting layer and in a portion positioned below the first current-blocking portion; and a second current-blocking portion formed over the surface of the light-reflecting layer excluding the portion in which is formed the partial electrode.

Abstract: At an upper part of au AIGaInP based compound semiconductor layer including an active layer 14 sandwiched by a lower cladding layer 13 and an upper cladding layer 15, a circular electrode 19 for wire bonding and cross-shaped branch electrodes 18 for current spreading connected to the circular electrode 19 arc formed. A contact electrode 17 for current injection is connected to the branch electrodes 18 for current spreading. An interface contact electrode 12 for current injection is provided under the AIGaInP based compound semiconductor layer. A light reflection mirror layer 10 is provided under the interface contact electrode 12 for current injection. The interface contact electrode 12 for current injection is provided right under an outer periphery of the electrode 19 for wire bonding or under a region in vicinity of the outer periphery of the electrode 19 for wire bonding.

Abstract: A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting portion formed on the second conductivity type cladding layer and the first current-blocking portion; a lower electrode formed on the back side of the substrate, a light-reflecting layer formed between the substrate and the light-emitting layer; a partial electrode formed on the surface of the light-reflecting layer and in a portion positioned below the first current-blocking portion; and a second current-blocking portion formed over the surface of the light-reflecting layer excluding the portion in which is formed the partial electrode.

Abstract: A light emitting element includes a semiconductor stacked structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer. The light emitting element further includes a plurality of convex portions formed on one surface of the semiconductor stacked structure, and an embedded part for transmitting a light emitted from the active layer and reducing stress generated in the plurality of convex portions, the embedded part being formed between two adjacent convex portions of the plurality of convex portions.

Abstract: An upper electrode is formed on one surface of a semiconductor multilayer structure including a light emitting layer. An interface electrode is formed at a region of another surface of the semiconductor multilayer structure except a region right under the upper electrode. A center of the interface electrode coincides with a center of the upper electrode. At least a part of the interface electrode has a similar shape to a shape of an outer periphery of the upper electrode. A current blocking layer is formed at another region of another surface of the semiconductor multilayer structure except the region where the interface electrode is formed. A reflecting layer for reflecting a part of the light emitted from the light emitting layer is electrically connected to the interface electrode. A conductive supporting substrate is electrically connected to the semiconductor multilayer structure.

Abstract: A light emitting device has a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a narrow electrode having a current feeding part provided on a region of a part above of the first semiconductor layer for supplying an electric current from outside to the semiconductor multilayer structure, and a narrow electrode provided adjacent to the current feeding part for reflecting a light emitted from the active layer, and a surface center electrode part electrically connected to the narrow electrode, and provided above the first semiconductor layer via a transmitting layer for transmitting the light.

Abstract: An upper electrode is formed on one surface of a semiconductor multilayer structure including a light emitting layer. An interface electrode is formed at a region of another surface of the semiconductor multilayer structure except a region right under the upper electrode. A center of the interface electrode coincides with a center of the upper electrode. At least a part of the interface electrode has a similar shape to a shape of an outer periphery of the upper electrode. A current blocking layer is formed at another region of another surface of the semiconductor multilayer structure except the region where the interface electrode is formed. A reflecting layer for reflecting a part of the light emitted from the light emitting layer is electrically connected to the interface electrode. A conductive supporting substrate is electrically connected to the semiconductor multilayer structure.

Abstract: At un upper part of an AlGaInP based compound semiconductor layer including an active layer 14 sandwiched by a lower cladding layer 14 and an upper cladding layer 15, a circular electrode 19 for wire bonding and cross-shaped branch electrodes 18 for current spreading connected to the circular electrode 19 are formed. A contact electrode 17 for current injection is connected to the branch electrodes 18 for current spreading. An interface contact electrode 17 for current injection is provided under the AlGaInP based compound semiconductor layer. A light reflection mirror layer 10 is provided under the interface contact electrode 12 for current injection. The interface contact electrode 12 for current injection is provided right under an outer periphery of the electrode 19 for wire bonding or under a region in vicinity of the outer periphery of the electrode 19 for wire bonding.

Abstract: A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting portion formed on the second conductivity type cladding layer and the first current-blocking portion; a lower electrode formed on the back side of the substrate, a light-reflecting layer formed between the substrate and the light-emitting layer; a partial electrode formed on the surface of the light-reflecting layer and in a portion positioned below the first current-blocking portion; and a second current-blocking portion formed over the surface of the light-reflecting layer excluding the portion in which is formed the partial electrode.

Abstract: Disclosed is a light emitting diode in which double hetero-structure epitaxial layers defining a light emitting portion are connected with a substrate by a mesa portion, and a cavity layer is formed by providing a mesa portion between the substrate and an adjoining layer of the epitaxial layers. Resin may be put into the cavity layer. Also provided is a process for fabricating a light emitting diode wherein the process comprises the steps of growing an AlGaAs layer with high mixed crystal ratio as a sacrificial layer, growing the epitaxial layers on the sacrificial layer to be connected with the mesa portion, and dissolving and removing the sacrificial layer to form the cavity layer. Light is reflected at the interface between a clad layer and the cavity layer or the resin put into the cavity layer, as a consequence, a light-emitting output can be improved.