Abstract: Medicinal compositions which can be processed into solutions and are useful in inhibiting rejection reactions against the transplantation of organs or bone marrow, in the maintenance immunotherapy therefor or in treating autoimmune diseases, characterized by containing 2-amino-2-[2-(4-octylphenyl)ethyl]propane-1,3-diol or pharmaceutically acceptable acid-addition salts thereof and cyclodextrins as a stabilizer optionally together with saccharides, if required.

Abstract: An aqueous liquid preparation, which has a pH of from 3 to 5 and comprises (R)-(−)-3-methyl-3-methyl -sulfonyl-1-(1H-1,2,4-triazol-1-yl)-2-[4-(trifluoromethyl)phenyl]butan-2-ol or a pharmaceutically acceptable salt thereof; and an injection for intravenous administration comprising the aqueous liquid preparation.

Abstract: An external preparation for topical administration which aims at inhibiting rejection reactions at organ or bone marrow transplantation or treating autoimmune diseases or allergic diseases and contains as the active ingredient 2-amino-2-(2-(4-octylphenyl)ethyl)propane-1,3-diol or a pharmaceutically acceptable acid addition salt thereof.

Abstract: An external preparation for topical administration which aims at inhibiting rejection reactions at organ or bone marrow transplantation or treating autoimmune diseases or allergic diseases and contains as the active ingredient 2-amino-2-(2-(4-octylphenyl)ethyl)propane-1,3-diol or a pharmaceutically acceptable acid addition salt thereof.

Abstract: The invention provides a filler for ink jet recording paper which is composed of an amorphous silica containing 0.3-1.0% by weight of Al.sub.2 O.sub.3 and having a BET specific surface area of 250-400 m.sup.2 /g, a mean particle size of 3.6-10.0 .mu.m and a peak position of pore radius as measured by mercury injection method of 37.5-75 angstrom. A coat layer of ink jet recording paper formed of this filler excels not only in true circle property of dots and ink absorbing property when printed by ink jet recording system, but also in surface strength and writing quality. Furthermore, the coating liquid containing this filler has a low viscosity and hence exhibits good coating workability.

Abstract: An etchant composition comprising(a) a cerium (IV) salt,(b) a nonionic or anionic fluorine-containing surfactant,(c) water, and(d) optionally, at least one compound selected from the group consisting of perchloric acid, acetic acid, sulfuric acid, nitric acid and hydrochloric acid and salts thereof, which can homogeneously etch a resist pattern having thin gaps as well as wide gaps on a chrome layer.

Abstract: A resist material of positive type having a high sensitivity, a high resolving power and an excellent adhesion property to substrates, which comprises a copolymer of a fluoroalkyl acrylate having the general formula: ##STR1## wherein R.sub.1 is methyl group, ethyl group, a halogen-substituted methyl or ethyl group, a halogen atom or hydrogen atom, R.sub.2 is a bivalent hydrocarbon group having 1 to 6 carbon atoms, and R.sub.f is a fluoroalkyl group having 1 to 15 carbon atoms, with an acrylic comonomer selected from the group consisting of a glycidyl acrylate, an acrylic acid, an acrylamide and an .alpha.-cyanoacrylate.

Abstract: A resist film made of thiocarbonyl fluoride polymers which has excellent sensitivity, resolving power and adhesion property to a substrate and can provide a fine resist pattern. The resist pattern is produced by forming the resist film on a substrate, irradiating an ionizing radiation and developing with an organic solvent.

Abstract: A resist material of positive type having a high sensitivity, a high resolving power and an excellent adhesion property to substrates, which comprises a copolymer of a fluoroalkyl acrylate having the general formula: ##STR1## wherein R.sub.1 is methyl group, ethyl group, a halogen-substituted methyl or ethyl group, a halogen atom or hydrogen atom, R.sub.2 is a bivalent hydrocarbon group having 1 to 6 carbon atoms, and R.sub.f is a fluoroalkyl group having 1 to 15 carbon atoms, with an acrylic comonomer selected from the group consisting of a glycidyl acrylate, an acrylic acid, an acrylamide and an .alpha.-cyanoacrylate.

Abstract: A process for forming a fluoroalkyl acrylate polymer film on a substrate by plasma polymerization. The fluoroalkyl acrylate polymer film has a high sensitivity to high energy rays and an excellent resolving power, and is very useful as a resist film. The plasma polymerized film of the invention has little pinholes, and is endurable to dry etching. A patterned resist film is prepared by irradiating the film with high energy rays to form a latent pattern and developing the latent pattern by either a wet process using a solvent or an oxygen or oxygen-containing gas plasma etching. Also, a pattern can be formed in the film by only electron beam irradiation. The pattern formation can be attained by electron beam delineation without development treatment.

Abstract: A process for forming a fluoroalkyl acrylate polymer film on a substrate by plasma polymerization. The fluoroalkyl acrylate polymer film has a high sensitivity to high energy rays and an excellent resolving power, and is very useful as a resist film. The plasma polymerized film of the invention has little pinholes, and is endurable to dry etching. A patterned resist film is prepared by irradiating the film with high energy rays to form a latent pattern and developing the latent pattern by either a wet process using a solvent or an oxygen or oxygen-containing gas plasma etching. Also, a pattern can be formed in the film by only electron beam irradiation. The pattern formation can be attained by electron beam delineation without development treatment.

Abstract: A process for forming a fluoroalkyl acrylate polymer film on a substrate by plasma polymerization. The fluoroalkyl acrylate polymer film has a high sensitivity to high energy rays and an excellent resolving power, and is very useful as a resist film. The plasma polymerized film of the invention has little pinholes, and is endurable to dry etching. A patterned resist film is prepared by irradiating the film with high energy rays to form a latent pattern and developing the latent pattern by either a wet process using a solvent or an oxygen or oxygen-containing gas plasma etching. Also, a pattern can be formed in the film by only electron beam irradiation. The pattern formation can be attained by electron beam delineation without development treatment.