Patents by Inventor Tsuneo Fujiki

Tsuneo Fujiki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wire structure and forming method of the same
    Patent number: 7666782
    Abstract: A wire structure, having: a first insulating layer having a lower layer trench formed in an outer surface thereof; a first diffusion preventing film formed on an inner surface of the lower layer trench; a lower layer wire filled in the lower layer trench over the first diffusion preventing film; an interlayer diffusion preventing film formed on the lower layer wire, the interlayer diffusion preventing film made of a high melt point metal or a high melt point metal compound; a second insulating layer formed over the first insulating layer and the interlayer diffusion preventing film, a second insulating layer having a via hole that penetrates through the second insulating layer and the interlayer diffusion preventing film so as to reach the lower layer wire; a conductive second diffusion preventing film formed on an inner surface of the via hall; a conductor filled in the via hole over the second diffusion preventing film, and an adhering film made of the material that forms the interlayer diffusion preventing
    Type: Grant
    Filed: May 5, 2006
    Date of Patent: February 23, 2010
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Tsuneo Fujiki
  • Wire structure and forming method of the same
    Publication number: 20060264030
    Abstract: A wire structure, comprising: a first insulating layer having a lower layer trench formed in an outer surface thereof; a first diffusion preventing film formed on an inner surface of the lower layer trench; a lower layer wire filled in the lower layer trench through the first diffusion preventing film; an interlayer diffusion preventing film formed on the lower layer wire, the interlayer diffusion preventing film made of a high melt point metal or a high melt point metal compound; a second insulating layer formed over the first insulating layer and the interlayer diffusion preventing film, a second insulating layer having a via hole that penetrates through the second insulating layer and the interlayer diffusion preventing film so as to reach the lower layer wire; a conductive second diffusion preventing film formed on an inner surface of the via hall; a conductor filled in the via hole through the second diffusion preventing film, and an adhering film made of the material that forms the interlayer diffusion
    Type: Application
    Filed: May 5, 2006
    Publication date: November 23, 2006
    Applicant: SHARP KABUSHIKI KAISHA
    Inventor: Tsuneo Fujiki