Abstract: A management apparatus obtains a list of a plurality of lots for which exposure processes are reserved, an initial value of an aberration of a projection optical system before start of the exposure processes of the plurality of lots, and an allowable value of the aberration of the projection optical system for each of the plurality of lots, generates candidates for an order of the plurality of lots based on the obtained list, calculates a time from start of an exposure process of the first lot until end of an exposure process of the last lot while adjusting time intervals between the lots so that the aberration of the projection optical system in the exposure process of each of the plurality of lots falls below the allowable value, and determines a processing order of the plurality of lots based on the calculated time.

Abstract: A management apparatus obtains a list of a plurality of lots for which exposure processes are reserved, an initial value of an aberration of a projection optical system before start of the exposure processes of the plurality of lots, and an allowable value of the aberration of the projection optical system for each of the plurality of lots, generates candidates for an order of the plurality of lots based on the obtained list, calculates a time from start of an exposure process of the first lot until end of an exposure process of the last lot while adjusting time intervals between the lots so that the aberration of the projection optical system in the exposure process of each of the plurality of lots falls below the allowable value, and determines a processing order of the plurality of lots based on the calculated time.

Abstract: An exposure apparatus comprises an illumination optical system which illuminates an original, a light intensity distribution along a scanning direction of the original formed by the illumination optical system having a slope at a peripheral portion thereof, a projection optical system which projects a pattern of the original onto a substrate, an original stage which holds and scans the original, a substrate stage which holds and scans the substrate, one of the original and the substrate being scanned while the one of the original and the substrate is tilted with respect to an image plane of the projection optical system, and a control unit which controls the projection optical system so as to reduce an asymmetry of a light intensity distribution formed on a plane on which the substrate is located, due to the tilt of the one of the original and the substrate with respect to the image plane.

Abstract: There is to provide a mask including a transparent member at a side of a surface of a base, a pattern being formed on the surface, and a correction part for correcting a change in an optical path of the transparent member.

Abstract: There is to provide a mask including a transparent member at a side of a surface of a base, a pattern being formed on the surface, and a correction part for correcting a change in an optical path of the transparent member.

Abstract: A projection exposure apparatus includes a projection optical system for projecting a pattern of a first object onto a second object, a correcting mechanism for changing an optical characteristic of the projection optical system, a positional information detecting device for detecting a relative positional relationship between first and second marks, which are disposed at different positions, wherein the positional information detecting device detects the first mark with the use of the projection optical system and without the use of the second mark, and detects the second mark without the use of the projection optical system, a discriminating device operable, after the detection of the relative positional relationship by the positional information detecting device is repeated at a predetermined time interval or successively, to discriminate a relation between first positional information obtained as a result of an earlier detection and second positional information obtained as a result of a later detection m

Abstract: An illumination system for illuminating an object, such as a system for detecting an alignment mark on a semiconductor wafer. The system includes a light source and an illumination optical system for directing light from the light source toward an object to be illuminated. A first optical element, which preferably is a hologram, is provided in a portion of the light path of the illumination optical system at a position optically conjugate with the object and has a function of amplitude-dividing the light and deflecting a divided light ray. A second optical element, which also preferably is a hologram, is provided in a portion of the light path that is closer to the object as compared to the first optical element and is disposed on a pupil plane of the illumination optical system. The second optical element also has a function of amplitude-dividing the light and deflecting a divided light ray.

Abstract: An exposure method and apparatus usable with a mask stage for holding a mask having an original pattern, a projection optical system for projecting at least a portion of the original pattern at a predetermined magnification and a substrate stage for holding a photosensitive substrate on an imaging plane of the projection optical system. The mask stage and the substrate stage are moved in a timed relation along a scan direction at a speed ratio corresponding to the magnification of the projection optical system by which a projected image of the original pattern can be scanningly printed on shots of the photosensitive layout. Scanning exposure is controlled on the basis of a shot layout of the photosensitive substrate which is determined per chip from information related to a chip structure and a chip size of the original pattern. The original pattern includes a plurality of original chip patterns.

Abstract: Disclosed is an exposure apparatus for printing a pattern of a reticle on different shot areas of the wafer in a step-and-repeat manner. In the disclosed apparatus, an image of an alignment mark of the reticle is printed, by use of a projection lens system, on each of some shot areas of the wafer which are selected as the subject of detection. By this, a latent image of the reticle mark is formed on each of the selected shot areas. The latent image of the reticle mark is detected by a microscope which may be a phase contrast microscope and, from the results of detection concerning all the latent images of the reticle mark, a reference (correction) grid representing the coordinate positions of all the shot areas of the wafer is prepared and stored. In accordance with the stored reference grid, the stepwise movement of the wafer is controlled at the time of the step-and-repeat exposures of the wafer. This assures improved throughput of the apparatus.