Abstract: An object of the invention is to provide an ultrasonic probe, an ultrasonic diagnostic device, and a manufacturing method of the ultrasonic probe, which are capable of reducing a product defect rate. An ultrasonic probe according to one embodiment includes a plurality of channels. Each of the plurality of channels includes a vibrator that outputs an ultrasonic wave, and a transmission circuit unit that changes an output in response to an input transmission signal and causes the vibrator to output the ultrasonic wave by driving the vibrator with the output. Here, the transmission circuit unit includes a stop signal holding circuit that holds a stop signal when the stop signal is input in advance, and selects whether to change the output in response to the transmission signal based on whether the stop signal is held.

Abstract: An object of the invention is to provide an ultrasonic probe, an ultrasonic diagnostic device, and a manufacturing method of the ultrasonic probe, which are capable of reducing a product defect rate. An ultrasonic probe according to one embodiment includes a plurality of channels. Each of the plurality of channels includes a vibrator that outputs an ultrasonic wave, and a transmission circuit unit that changes an output in response to an input transmission signal and causes the vibrator to output the ultrasonic wave by driving the vibrator with the output. Here, the transmission circuit unit includes a stop signal holding circuit that holds a stop signal when the stop signal is input in advance, and selects whether to change the output in response to the transmission signal based on whether the stop signal is held.

Abstract: A peaking circuit for adjusting peaking of a high-frequency signal, comprises: a first inductor; a second inductor which is electromagnetically coupled with the first inductor; a signal input section which receives an input signal; a transistor which adjusts electric current passing through the second inductor according to the input signal inputted via the signal input section; and a signal output section which outputs a signal whose peaking has been adjusted by the first inductor. Mutual inductance of the electromagnetically coupled first and second inductors is changed by the adjustment of the electric current passing through the second inductor, according to the input signal inputted via the signal input section, with the use of the transistor, thereby adjusting the peaking of signal waveform of electric current passing through the first inductor, and the signal subjected to the peaking adjustment is outputted from the signal output section.

Abstract: A peaking circuit for adjusting peaking of a high-frequency signal, comprises: a first inductor; a second inductor which is electromagnetically coupled with the first inductor; a signal input section which receives an input signal; a transistor which adjusts electric current passing through the second inductor according to the input signal inputted via the signal input section; and a signal output section which outputs a signal whose peaking has been adjusted by the first inductor. Mutual inductance of the electromagnetically coupled first and second inductors is changed by the adjustment of the electric current passing through the second inductor, according to the input signal inputted via the signal input section, with the use of the transistor, thereby adjusting the peaking of signal waveform of electric current passing through the first inductor, and the signal subjected to the peaking adjustment is outputted from the signal output section.

Abstract: A semiconductor integrated circuit device capable of achieving higher integration and simplification of manufacturing processes is provided. Circuitry is provided which includes a first N-channel MOSFET and a first p-channel MOSFET each having a gate insulating dielectric film with a first film thickness, wherein a poly-silicon layer making up a gate electrode is doped with an N-type impurity. The circuitry also includes a second N-channel MOSFET having a gate insulator film with a second film thickness thinner than the first thickness, wherein an N-type impurity is doped into a polysilicon layer making up a gate electrode, and a second P-channel MOSFET with a P-type impurity being doped into a polysilicon layer making up a gate electrode. The gate electrodes of the first N-channel MOSFET and first P-channel MOSFET are integrally formed and mutually connected together.

Abstract: A semiconductor integrated circuit device capable of achieving higher integration and simplification of manufacturing processes is provided. Circuitry is provided which includes a first N-channel MOSFET and a first p-channel MOSFET each having a gate insulating dielectric film with a first film thickness, wherein a poly-silicon layer making up a gate electrode is doped with an N-type impurity. The circuitry also includes a second N-channel MOSFET having a gate insulator film with a second film thickness thinner than the first thickness, wherein an N-type impurity is doped into a polysilicon layer making up a gate electrode, and a second P-channel MOSFET with a P-type impurity being doped into a polysilicon layer making up a gate electrode. The gate electrodes of the first N-channel MOSFET and first P-channel MOSFET are integrally formed and mutually connected together.