Abstract: A underlying layer of multi-component material of a first formula is deposited on a substrate by controlling the amounts of sputtering materials evaporated respectively from a plurality of sputtering sources. A transition layer of multi-component material is subsequently formed on the underlying layer by controlling the amounts of the sputtering materials so that the transition layer is given a second, variable formula varying in a range from the first formula at the boundary between the underlying layer and the transition layer to a third formula. An overlying layer of multi-component material of the third formula is subsequently formed on the transition layer by controlling the amounts of the sputtering materials. Specifically, the first formula is [Pb.sub.1-(x/100) La.sub.x/100 ][Zr.sub.y/100 Ti.sub.z/100 ].sub.w O.sub.3, in which 10.ltoreq.x.ltoreq.40, y.ltoreq.5, w=1-(x/400) and y+z=100, and the third formula is [Pb.sub.1-(X/100) La.sub.X/100 ] [Zr.sub.Y/100 Ti.sub.Z/100 ].sub.W O.sub.3, in which X.

Abstract: A surface acoustic wave transducer has a multilayered substrate which is made of a nonpiezoelectric plate which has a surface which is coated with a piezoelectric film, and has an interdigital electrode which is disposed on or under the surface of the piezoelectric film. The interdigital electrode has a split structure and the phase velocity of the surface acoustic wave of the piezoelectric film is smaller than that of the nonpiezoelectric plate.

Abstract: A pickup stylus comprises a diamond stylus body having a rough surface and a conductive coating deposited onto said rough surface. The rough surface is made by ion bombardment process.The pickup stylus is useful for information playback in video and/or audio disc system.

Abstract: This invention provides a surface acoustic wave device which comprises a multi-layered substrate. The multi-layered substrate comprises at least a piezoelectric zinc oxide layer, an intermediate silicon oxide layer and an .alpha.-Al.sub.2 O.sub.3 base made of a single crystal havine an (0112) crystallographic plane or an equivalent crystallographic plane. This surface acoustic wave device is operable at ultra-high frequency.

Abstract: A high performance, precision thermistor comprising a temperature sensitive resistor in the form of a thin, uniform layer of silicon carbide, deposited on a base support by sputtering, and electrode means attached to the temperature sensitive resistor in electrically connected relation to the temperature sensitive resistor.

Abstract: A surface acoustic wave device comprising a piezoelectric substrate which comprises an .alpha.-alumina layer as a base region and a zinc oxide layer as a surface region formed on the .alpha.-alumina layer. Preferably the two layers are each made of a single crystal, and the thickness of the zinc oxide layer and an angle between a crystallographic axis of the zinc oxide single crystal and the direction of wave propagation are determined so as to fall within optimum ranges, respectively. This device features an increased phase velocity and an augmented value for the electromechanical coupling coefficient and accordingly is of use at very-high to ultra-high frequencies.