Abstract: A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate.

Abstract: A thin film semiconductor substrate for a display device includes a thin film semiconductor circuit layer formed on a single crystal semiconductor substrate and a support substrate formed over the thin film semiconductor circuit layer. An adhesive layer made of a fluorine-containing epoxy family adhesive is provided between the insulating layer and the support substrate. When the single crystal semiconductor substrate is removed, the yield rate in production of the thin film semiconductor substrate is greatly improved.

Abstract: A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve. The semiconductor device for a light valve is constructed by a semiconductor substrate composed of a bulk single crystal silicon having an opaque thick portion and a thin transparent portion. A pixel array is formed in the transparent portion. A drive circuit is formed in a top face of the opaque portion. A transparent support substrate is laminated to the top face of the semiconductor substrate for reinforcement. A bulk portion of the semiconductor substrate is removed from a back face thereof by selective etching to provide the transparent portion.

Abstract: A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate.

Abstract: The electro-optical device is constructed in the form of an active matrix liquid crystal display device utilizing nonlinear resistive elements. As input protective element is disposed between adjacent input electrodes of the device so as to protect the nonlinear resistive elements in the electro-optical device against excessive input and electrostatic voltage.

Abstract: A hub setting device for a hub onto which a magnetic tape is wound with which the hub can easily be attached to and removed from a rotary shaft with substantially no play between the hub and shaft when engaged. A divided ring is retained in a recess formed in a boss portion of the shaft, and the ring is urged radially outwardly by an elastic member such as a pair of elastic tubular members. An elastic retention member is fitted around the divided ring, received completely within a recess formed around the outer circumferential surface of the ring.

Abstract: In a magnetic tape wind-up system for winding up a magnetic tape into a roll shape around a wind-up core, a feed direction of the magnetic tape to a tape roll, which is formed by winding up of a preceding portion of the magnetic tape, is controlled by a position control roller before the magnetic tape arrives at the tape roll. The position of the magnetic tape in the tape width direction is controlled by an edge control roller at a position where the magnetic tape arrives at the tape roll. Air between turns of the magnetic tape in the tape roll is discharged by pushing the magnetic tape against the tape roll by use of a push roller while the magnetic tape is present at the outermost circumference of the tape roll.

Abstract: Insulated-gate-field-effect transistors are disposed on an insulating substrate as a matrix. Each gate electrode of the transistors is covered with each gate insulating film and semiconductor film acting as a channel of the transistors, respectively.

Abstract: A matrix liquid crystal display device comprising a reflecting plate and a polarizing plate coated on an insulating substrate, a thin film transistor arranged on the insulating substrate in matrix configuration, and a liquid crystal sandwiched between the insulating substrate and a glass plate. A cross-talk between picture elements caused by transmission or reflection of light on the substrate is prevented. The thin film transistor is formed by a semiconductor film made of amorphous silicon or a gate insulating film made of silicon dioxide which is easily formed at low temperature under 40.degree. C. by plasma CVD method or the like.

Abstract: A thin film transistor of amorphous silicon is supported by an insulated gate on an insulating substrate and has the opposite side covered with a shading layer of amorphous silicon containing germanium in an amount more than 30% atomic density.

Abstract: A p-.nu.-n Si photodiode having an n-type control layer extended into the silicon body from a portion of the surface contiguous to that portion from which a p-type region extends. Photodiodes incorporating this control layer have a much higher junction resistance.The invention also includes an improved method of making a photodiode which has a reduced number of processing steps. The improvement comprises implanting As or Sb into the surface of a .nu.-type Si body to form an n-type layer prior to the steps of passivating the surface and forming a p-type region extending into the body from the surface.