Patents by Inventor Tsuneteru Takahashi

Tsuneteru Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxial wafer of gallium arsenide phosphide
    Patent number: 5751026
    Abstract: In an epitaxial wafer of gallium arsenide phosphide, a single crystal substrate is provided thereon with a gallium arsenide phosphide layer with a varying mixed crystal ratio, a gallium arsenide phosphide layer with a constant mixed crystal ratio, and a nitrogen-doped gallium arsenide phosphide layer with a constant mixed crystal ratio. The nitrogen-doped gallium arsenide phosphide layer with a constant mixed crystal ratio has a carrier concentration of 3.times.10.sup.15 cm.sup.-3 or less.
    Type: Grant
    Filed: February 18, 1997
    Date of Patent: May 12, 1998
    Assignee: Mitsubishi Kasei Corporation
    Inventors: Tadashige Sato, Megumi Imai, Tsuneteru Takahashi