Abstract: A resistively stabilized transistor in which secondary breakdown is prevented by the insertion of a floating emitter protection region around only one end of a stabilizing resistive region. The transistor includes an ordinary emitter region located within a base region. A floating emitter region surrounds the ordinary emitter region. An elongated stabilizing resistive region has one end connected to the ordinary emitter region and the other to the base region. The protection region is positioned around, but spaced from, an end portion of the stabilizing resistive region only in the area where the resistive region connects to the ordinary emitter region.

Abstract: In the particular embodiments of the invention described in the specification, a semiconductor package is made from two modules, one containing a semiconductor element having a high allowable temperature and the other containing a circuit component having a lower allowable temperature. The modules are combined by corresponding embossed and recessed surfaces or by pin connection or by a connecting screw.