Abstract: A sputtering process of a substrate biasing system and an apparatus for carrying out the same, capable of forming a film in satisfactory surface coverage over stepped underlying layer. The present invention solves problems in the quality of films formed by the conventional sputtering process of a substrate biasing system by regulating the bias potential of a substrate on which a film is to be formed so that the kinetic energy of ions of a sputtering gas falling on the substrate is varied periodically. The bias potential is regulated by periodically varying the amplitude of the output of a radio frequency (or dc) bias power supply or by changing the duty factor of a voltage pulse stream of the output of the radio frequency (or dc) bias power supply.

Abstract: A target for use in a sputtering technique usually has a flat structure. The present invention has succeeded in endowing sputtering film formation with a directivity in such a way that the surface of the target is provided with recesses thereby to limit the flight directions of sputtering particles.Alternatively, the directivity can be bestowed by disposing a frame between a substrate to be formed with a film and the flat sputtering target. This measure requires auxiliary means in which a wall is provided at the outer periphery of the sputtering target so as to effectively utilize a plasma.The present invention actually formed films by the use of the above technique, and has verified the effect thereof. Wide applications are expected in technical fields wherein after forming a microscopic pattern, one or more films need to be further formed.

Abstract: Disclosed is a thermal printhead made of an insulating substrate, and a heat generating resistor layer formed on the substrate, and wherein the heat generating resistor layer is supplied with electric current. The heat generating resistor layer is made of Cr-Si-SiO alloy, and with the Cr, Si and SiO contents falling within a region defined by points A, B, C and D in a triangular diagram, where the points A, B, C and D are determined as follows:______________________________________ Cr (mol %) (Si (mol %) SiO (mol %) ______________________________________ A 79.4 2.1 18.5 B 58.6 40.9 0.5 C 10.1 89.4 0.5 D 24.4 3.7 71.9.

Abstract: Disclosed is a resistor made of an alloy consisting essentially of Cr, Si and SiO.

Abstract: A thermal printhead comprising a substrate, heat generating thin film resistor bodies formed on the substrate and electric conductors for supplying the heat generating thin film resistor bodies with electric power, characterized in that the heat generating thin film resistor bodies are made of a Cr-Si alloy subjected to a stabilization aging heat treatment.