Abstract: A function map generation method and system are provided. The system executes the following steps using an artificial intelligence model. A difficulty point and first data related to the difficulty point are obtained from a first reply content of a first query corresponding to the difficulty point. A usage target and second data related to the usage target are obtained from a second reply content of a second query corresponding to the usage target. An implementation function and a target type are obtained based on the difficulty point and the usage target. A required function is obtained based on the target type. Semantic comparison between the implementation function and the required function is performed to obtain a difference set content. A function map is generated based on the target type, the implementation function, and the difference set content.

Abstract: The present invention provides an improved process for the preparation of tucatinib, tucatinib intermediates, and the crystalline forms thereof. Specifically, the presently disclosed one-pot reaction processes save time and resources. The present invention improves the efficacy of producing Tucatinib, which can be performed under green chemistry.

Abstract: The present invention provides a novel modified chemokine peptide. Additionally, the novel modified chemokine peptide can be used to treat cancer and inhibit tumor growth more effectively.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. A first patterned layer and a second patterned layer are formed over a substrate. The second patterned layer and the first patterned layer are alternately arranged. An etching is performed, thereby forming an arched surface of the first patterned layer and an arched surface of the second patterned layer. A sacrificial layer is formed over the first patterned layer and the second patterned layer, wherein a plurality of air gaps are defined by the substrate, the first patterned layer, the second patterned layer and the sacrificial layer. The sacrificial layer above the plurality of air gaps is removed, and a planar top surface of the first patterned layer and a planar top surface of the second patterned are thereby formed. The substrate is then patterned using the first patterned layer and the second patterned layer as a mask.

Abstract: A power adapter includes a flyback converter and a buck converter. If a first device is a preferred device, then power is allocated to the first device up to a first value. If a second device is plugged in, then power is re-allocating to the first device up to a second value and up to a third value to the second device. A total of the second value and the third value is up to the first value.

Abstract: The present invention provides a novel modified chemokine peptide. The novel modified chemokine peptide can be combined with a targeted drug for treating cancer, especially for treating drug-resistant cancer, and inhibiting tumor growth more effectively.

Abstract: The present disclosure provides a manufacturing method of a semiconductor structure. The method includes: forming a conformal layer over a first patterned layer over a substrate; forming a second layer over the conformal layer and between portions of the first patterned layer; performing a first etching to form a second patterned layer and a patterned conformal layer; performing a second etching to remove a portion of the first patterned layer to form a first inclined member of the first patterned layer tapered away from the substrate and lining a vertical portion of the patterned conformal layer, and to remove a portion of the second patterned layer to form a second inclined member of the second patterned layer tapered away from the substrate and lining the vertical portion of the patterned conformal layer; and performing a third etching to remove the vertical portions of the patterned conformal layer.

Abstract: A machine for smashing thermosetting materials includes a high-pressure direct drive pump assembly, a mixing tank, a chemical solution tank, a hydraulic-control solenoid valve, a low-pressure auxiliary pump, a directional valve set and a controller. The controller, connected signally with the high-pressure direct drive pump assembly, the mixing tank, the chemical solution tank, the hydraulic-control solenoid valve, the low-pressure auxiliary pump and the directional valve set, is used to control opens and closes of the first directional valve, the second directional valve, the third directional valve and the hydraulic-control solenoid valve so as to supply the chemical solution in the chemical solution tank to the mixing tank.

Abstract: The present disclosure provides a manufacturing method of a semiconductor structure. The method includes: forming a conformal layer over a first patterned layer over a substrate; forming a second layer over the conformal layer and between portions of the first patterned layer; performing a first etching to form a second patterned layer and a patterned conformal layer; performing a second etching to remove a portion of the first patterned layer to form a first inclined member of the first patterned layer tapered away from the substrate and lining a vertical portion of the patterned conformal layer, and to remove a portion of the second patterned layer to form a second inclined member of the second patterned layer tapered away from the substrate and lining the vertical portion of the patterned conformal layer; and performing a third etching to remove the vertical portions of the patterned conformal layer.

Abstract: An information handling system detects an initial insertion of an alternating current (AC) adapter, and determines an identifier associated with the AC adapter. The system may also determine a parameter for attenuating noise generated by the AC adapter based on the identifier, and attenuate the noise generated by the AC adapter by applying the parameter.

Abstract: A manufacturing method of a semiconductor device including providing a substrate, forming a hard mask over the substrate, etching the substrate by using the hard mask as an etch mask to form a first protrusion region and a plurality of second protrusion regions, wherein the first protrusion region is separated from a closest one of the second protrusion regions by a first trench, and neighboring two of the second protrusion regions are separated by a second trench, forming a first dielectric layer lining the first trench and the second trench, forming a second dielectric layer in the first trench, in which the second dielectric layer is along the first dielectric layer in the first trench, etching back the second dielectric layer to form a blocking structure, and filling the first trench with a filling material, in which the filling material covers the blocking structure.

Abstract: A contact lens including at least one silicone monomer is provided, wherein the surface of the contact lens includes polyacrylic acid and/or sodium polyacrylate, and the molecular weight of the polyacrylic acid and/or the sodium polyacrylate is greater than 100 kDa. The present invention further provides a silicone hydrogel contact lens. The contact lens and the silicone hydrogel contact lens provided by the present invention have the advantages of good hydrophilicity and being suitable for consumers' long-time wearing.

Abstract: An assembly includes a cover ring having a first surface and a second surface opposite the first surface, the first surface of the cover ring having a first roughness, and a deposition ring having a first surface facing the cover ring and a second surface opposite the first surface, the first surface of the deposition ring having a second roughness. The first roughness is different from the second roughness.

Abstract: An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.

Abstract: A method and system for supplying power at a voltage selected from a plurality of voltages. Power is initially received at a first voltage. Embodiments communicate with an AC adapter to get device identification and see if the AC adapter supports other voltages. If so, embodiments communicate with the AC adapter to get more information about the adapter and identify what voltages the adapter is capable of providing. If one of the voltages would allow an information handling system to operate more efficiently, embodiments negotiate a power supply contract to operate at a second voltage. When the information handling system powers down, the system resets to operation at the initial voltage.

Abstract: An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.

Abstract: A semiconductor power device includes a substrate; a buffer structure formed on the substrate; a barrier structure formed on the buffer structure; a channel layer formed on the barrier structure; and a barrier layer formed on the channel layer; wherein the barrier structure includes a first functional layer on the buffer structure, a second functional layer formed between the first functional layer and the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer; wherein a material of the first back-barrier layer includes Alx1Ga1-x1N, a material of the first functional layer includes Alx2Ga1-x2N, a material of the interlayer includes Alx3Ga1-x3N, a material of the second functional layer includes Alx4Ga1-x4N, wherein 0<x1?1, 0?x2?1, 0?x3?1, 0?x4<1, and x1?x2; and wherein the first functional layer includes a first thickness, the second functional layer includes a second thickness, and the second thic

Abstract: An information handling system detects an initial insertion of an alternating current (AC) adapter, and determines an identifier associated with the AC adapter. The system may also determine a parameter for attenuating noise generated by the AC adapter based on the identifier, and attenuate the noise generated by the AC adapter by applying the parameter.

Abstract: To reduce the occurrence of current alarms in a semiconductor etching or deposition process, a controller determines an offset in relative positions of a cover ring and a shield over a wafer within a vacuum chamber. The controller provides a position alarm and/or adjusts the position of the cover ring or shield when the offset is greater than a predetermined value or outside a range of acceptable values.