Abstract: A method of forming a semiconductor device structure includes: forming a first conductive structure over a substrate, the first conductive structure including twin boundaries; and wherein the forming the first conductive structure includes manipulating process conditions so as to promote formation of the twin boundaries resulting in a promoted density of twin boundaries such that the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted density of twin boundaries, the unpromoted density being less than the promoted density and such that the first conductive structure has a resistance which is substantially the same as the second conductive structure.

Abstract: A method, for forming a semiconductor device structure, includes: forming a conductive structure over a substrate, wherein the conductive structure includes twin boundaries. The forming the conductive structure includes: manipulating process conditions so as to promote formation of the twin boundaries and yet control a density of the twin boundaries to be outside a range for which a portion of a curve is an asymptote of a constant value, the curve representing values of an atomic migration ratio corresponding to values of the density of the twin boundaries.

Abstract: A method of forming a semiconductor device structure includes: forming a first conductive structure over a substrate, the first conductive structure including twin boundaries; and wherein the forming the first conductive structure includes manipulating process conditions so as to promote formation of the twin boundaries resulting in a promoted density of twin boundaries such that the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted density of twin boundaries, the unpromoted density being less than the promoted density and such that the first conductive structure has a resistance which is substantially the same as the second conductive structure.

Abstract: A method, for forming a semiconductor device structure, includes: forming a conductive structure over a substrate, wherein the conductive structure includes twin boundaries. The forming the conductive structure includes: manipulating process conditions so as to promote formation of the twin boundaries and yet control a density of the twin boundaries to be outside a range for which a portion of a curve is an asymptote of a constant value, the curve representing values of an atomic migration ratio corresponding to values of the density of the twin boundaries.

Abstract: A semiconductor device structure with twin-boundaries and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive structure formed over the substrate. The conductive structure includes twin boundaries, and a density of the twin boundaries is in a range from about 25 ?m?1 to about 250 ?m?1.

Abstract: A chip package is provided. The chip package includes a first chip including a carrier substrate and a device substrate thereon. A second chip is mounted on the device substrate. A portion of the device substrate extends outward from the edge of the second chip, so as to be exposed from the second chip. A conductive pad is between the device substrate and the second chip. A polymer protective layer conformally covers the second chip, the exposed portion of the device substrate, and the edge of the carrier substrate. A redistribution layer is disposed on the polymer protective layer and extends into a first opening that passes through the polymer protective layer and the second chip and exposes the conductive pad, so as to be electrically connected to the conductive pad.

Abstract: A semiconductor device structure with twin-boundaries and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive structure formed over the substrate. The conductive structure includes twin boundaries, and a density of the twin boundaries is in a range from about 25 ?m?1 to about 250 ?m?1.

Abstract: The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk.

Abstract: The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk.

Abstract: The present invention discloses a method for fabricating a copper nanowire with high density twins, which comprises steps: providing a template having a top surface, a bottom surface and a plurality of through-holes penetrating the top surface and the bottom surface and having a diameter of smaller than 55 nm; placing the template in a copper-containing electrolyte at a low temperature lower than ambient temperature and applying a pulse current to perform an electrodeposition process to form a copper nanowire with twin structures in each through-hole. The pulse current increases the probability of stacking faults in the deposited copper ions. The low temperature operation favors formation of nucleation sites of twins. Therefore, the copper nanowire has higher density of twins. Thereby is effectively inhibited electromigration of the copper nanowire.

Abstract: A method for forming a metal film with twins is disclosed. The method includes: (a) forming a metal film over a substrate, the metal film being made of a material having one of a face-centered cubic crystal structure and a hexagonal close-packed crystal structure; and (b) ion bombarding the metal film at a film temperature lower than ?20° C. in a vacuum chamber and with an ion-bombarding energy sufficient to cause plastic deformation of the metal film to generate deformation twins in the metal film.

Abstract: A method for forming a metal film with twins is disclosed. The method includes: (a) forming a metal film over a substrate, the metal film being made of a material having one of a face-centered cubic crystal structure and a hexagonal close-packed crystal structure; and (b) ion bombarding the metal film at a film temperature lower than ?20° C. in a vacuum chamber and with an ion-bombarding energy sufficient to cause plastic deformation of the metal film to generate deformation twins in the metal film.