Abstract: A method of lithography process is provided. The method includes forming a conductive layer over a reticle. The method includes applying ionized particles to the reticle by a discharging device. The method includes forming a photoresist layer over a semiconductor substrate. The method includes securing the semiconductor substrate by a wafer electrostatic-clamp. The method also includes patterning the photoresist layer by emitting radiation from a radiation source via the reticle.

Abstract: A backside metallized compound semiconductor device includes a compound semiconductor wafer and a metal layered structure. The compound semiconductor wafer includes a substrate having opposite front and back surfaces, and a ground pad structure formed on the front surface. The substrate is formed with a via extending from the back surface to the front surface to expose a side wall of the substrate and a portion of the ground pad structure. The metal layered structure is disposed on the back surface, and covers the side wall and the portion of the ground pad structure. The metal layered structure includes an adhesion layer, a seed layer, a gold layer, and an electroplated copper layer that are formed on the back surface in such order. The method for manufacturing the backside metallized compound semiconductor device is also disclosed.

Abstract: A particle transporter based on travelling-wave dielectrophoresis is provided. The particle transporter includes a common electrode, a plurality of left switch electrodes and a plurality of right switch electrodes. The left switch electrodes and the right switch electrodes are respectively disposed adjacent to different ends at one side of the common electrode. The left switch electrodes are disposed on the substrate along a first straight-line direction. The left switch electrodes are parallel to the common electrode and provide a left switch channel to transport a plurality of particles. The right switch electrodes are disposed on the substrate along a second straight-line direction. The right switch electrodes are parallel to the common electrode and provide a right switch channel to transport the particles.

Abstract: A particle transporter based on travelling-wave dielectrophoresis is provided. The particle transporter includes a first collection electrode and a second collection electrode on a substrate. The first collection electrode has a first dentate portion. The second collection electrode is located adjacent to the first dentate portion of the first collection electrode. The second collection electrode has a second dentate portion at a side adjacent to the first dentate portion. Where, a particle collection space is formed around tips of the first dentate portion and the second dentate portion.

Abstract: A particle transporter based on travelling-wave dielectrophoresis is provided. The particle transporter includes a plurality of turn-around electrodes. The turn-around electrodes are disposed on a substrate and arranged in a fan shape. The turn-around electrodes provide an arc channel for transporting a plurality of particles. Wherein, the turn-around electrodes are not connected to each other, and neighboring sides of any two adjacent electrodes of the turn-around electrodes are approximately parallel.