Abstract: The disclosure provides a system to simulate a simulated noise on the power zone block of a substrate. The system comprises a signal trace and a signal generating circuit. The signal trace is disposed adjacent to the power zone block. The signal generating circuit is electrically coupled to the signal trace, configured to transmit an alternating current signal over the signal trace. The alternating current signal transmitted over the signal trace is configured to induce a simulated noise on the power zone block, and a waveform of the simulated noise is determined by a frequency of the alternating current signal.

Abstract: A semiconductor device includes a first semiconductor die and a second semiconductor die connected to the first semiconductor die. Each of the first semiconductor die and the second semiconductor die includes a substrate, a conductive bump formed on the substrate and a conductive contact formed on the conductive bump. The conductive contact has an outer lateral sidewall, there is an inner acute angle included between the outer lateral sidewall and the substrate is smaller than 85°, and the conductive contact of the first semiconductor die is connected opposite to the conductive contact of the second semiconductor die.

Abstract: A non-contact shaping device includes a first fixture including a fixing section structured to alternately blow out and suck in gas. The fixing section may fix, through suction of gas, a glass plate thereon. An optic heat source processing device is selectively set above predetermined portions of the glass plate to heat, in a non-contact manner, and thus soften, in a temperature-controlled manner, the portions for curving and suspending downward along an edge of the fixing section. The curved glass plate is then lifted up through blowing gas from the first fixture. The second fixture selectively covers the curved glass plate and blow gas therefrom to flow, in collaborative combination with the gas blown from the first fixture, around surfaces of the curved glass plate for cooling and fixing a shape of the curved glass plate in a non-contact manner to form a three-dimensional curve-surfaced glass product.

Abstract: A building method and a building system for panorama point cloud data are provided. The building method for panorama point cloud data includes the following steps. At least one reference geometric object located at an overlap region of two adjacent three-dimensional capturing devices is captured by the two adjacent three-dimensional capturing devices to obtain two reference point cloud sets. A reference feature plane is obtained from each of the reference point cloud sets. A coordinate transformation matrix is obtained according to the reference feature planes. A plurality of real-time point cloud sets are obtained by the three-dimensional capturing devices. The coordinate transformation of the real-time point cloud sets are performed according to the coordinate transformation matrix, and the real-time point cloud sets are combined to obtain the panorama point cloud data.

Abstract: A non-contact shaping device includes a first fixture including a fixing section structured to alternately blow out and suck in gas. The fixing section may fix, through suction of gas, a glass plate thereon. An optic heat source processing device is selectively set above predetermined portions of the glass plate to heat, in a non-contact manner, and thus soften, in a temperature-controlled manner, the portions for curving and suspending downward along an edge of the fixing section. The curved glass plate is then lifted up through blowing gas from the first fixture. The second fixture selectively covers the curved glass plate and blow gas therefrom to flow, in collaborative combination with the gas blown from the first fixture, around surfaces of the curved glass plate for cooling and fixing a shape of the curved glass plate in a non-contact manner to form a three-dimensional curve-surfaced glass product.

Abstract: A building method and a building system for panorama point cloud data are provided. The building method for panorama point cloud data includes the following steps. At least one reference geometric object located at an overlap region of two adjacent three-dimensional capturing devices is captured by the two adjacent three-dimensional capturing devices to obtain two reference point cloud sets. A reference feature plane is obtained from each of the reference point cloud sets. A coordinate transformation matrix is obtained according to the reference feature planes. A plurality of real-time point cloud sets are obtained by the three-dimensional capturing devices. The coordinate transformation of the real-time point cloud sets are performed according to the coordinate transformation matrix, and the real-time point cloud sets are combined to obtain the panorama point cloud data.

Abstract: An expansion module of a programmable logic controller is provided. The expansion module comprises a function body and an expansion base. The function body comprises a housing, a circuit board and a first connector. The circuit board is disposed in the housing. The first connector is connected with the circuit board and is partially exposed from the housing. The expansion base is detachably assembled with the function body and comprises a bracket and a three-way connector. The three-way connector is detachably disposed in the bracket and comprises three conducting terminals. The first conducting terminal and the second conducting terminal are at least partially exposed from the bracket. The third conducting terminal is configured to connect with the first connector. When there are plural expansion modules, two adjacent function bodies can be detachably assembled with each other, and two adjacent expansion bases can be detachably assembled with each other.

Abstract: A method of fabricating a poly-crystalline silicon ingot includes: (a) loading a nucleation promotion layer onto a bottom of a mold; (b) providing a silicon source on the nucleation promotion layer in the mold; (c) heating the mold until the silicon source is melted into a silicon melt completely; (d) controlling at least one thermal control parameter regarding the silicon melt continually to enable the silicon melt to nucleate on the nucleation promotion layer such that a plurality of silicon grains grow in the vertical direction; (e) controlling the at least one thermal control parameter to enable the plurality of the silicon grains to continuously grow with an average grain size increasing progressively in the vertical direction until entirety of the silicon melt is solidified to obtain the poly-crystalline silicon ingot, wherein the nucleation promotion layer is loaded by spreading a plurality of mono-Si particles over the bottom of the mold.

Abstract: A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%.

Abstract: A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%.

Abstract: A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm.

Abstract: A method of fabricating a poly-crystalline silicon ingot includes: (a) loading a nucleation promotion layer onto a bottom of a mold; (b) providing a silicon source on the nucleation promotion layer in the mold; (c) heating the mold until the silicon source is melted into a silicon melt completely; (d) controlling at least one thermal control parameter regarding the silicon melt continually to enable the silicon melt to nucleate on the nucleation promotion layer such that a plurality of silicon grains grow in the vertical direction; (e) controlling the at least one thermal control parameter to enable the plurality of the silicon grains to continuously grow with an average grain size increasing progressively in the vertical direction until entirety of the silicon melt is solidified to obtain the poly-crystalline silicon ingot, wherein the nucleation promotion layer is loaded by spreading a plurality of mono-Si particles over the bottom of the mold.

Abstract: An electronic device is detachably mounted on a DIN rail. The DIN rail includes a first protruding edge and a second protruding edge. The electronic device includes a main body and two clips. The two clips are movably disposed on the main body. Each clip includes a base and an extension part. The base includes a notch. The notch is selectively engaged with or disengaged from the first protruding edge or the second protruding edge. The extension part is connected with the base and extended from the base. The extension part includes a double-bevel bulge and an elastic extension arm. The elastic extension arm is located beside the double-bevel bulge. A free end of the elastic extension arm has an engaging part. The notches of the two clips are engaged with or disengaged from the first protruding edge and the second protruding edge, respectively.

Abstract: A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm.

Abstract: An electronic device is detachably mounted on a DIN rail. The DIN rail includes a first protruding edge and a second protruding edge. The electronic device includes a main body and two clips. The two clips are movably disposed on the main body. Each clip includes a base and an extension part. The base includes a notch. The notch is selectively engaged with or disengaged from the first protruding edge or the second protruding edge. The extension part is connected with the base and extended from the base. The extension part includes a double-bevel bulge and an elastic extension arm. The elastic extension arm is located beside the double-bevel bulge. A free end of the elastic extension arm has an engaging part. The notches of the two clips are engaged with or disengaged from the first protruding edge and the second protruding edge, respectively.

Abstract: The invention discloses a seed used for crystalline silicon ingot casting. A seed according to a preferred embodiment of the invention includes a crystal and an impurity diffusion-resistant layer. The crystal is constituted by at least one grain. The impurity diffusion-resistant layer is formed to overlay an outer surface of the crystal. A crystalline silicon ingot fabricated by use of the seed of the invention has significantly reduced red zone and yellow zone.

Abstract: A remote-controlled electric golf bag cart has a remote control, a support frame, an antenna set and a control module. The remote control transmits a distance measurement signal. The support frame has a wheel assembly, a golf bag stand and a motor assembly mounted thereon. The antenna set and the control module are mounted on the support frame. The antenna set receives the distance measurement signal. The control module determines an orientation and a distance of the remote control according to the distance measurement signal received by the antenna set, and drives the motor assembly to move the support frame forward toward the remote control, making the support follow a user having the remote control and preventing other in-field persons and obstacles from affecting the support frame to follow the remote control.

Abstract: A remote-controlled electric golf bag cart has a remote control, a support frame, an antenna set and a control module. The remote control transmits a distance measurement signal. The support frame has a wheel assembly, a golf bag stand and a motor assembly mounted thereon. The antenna set and the control module are mounted on the support frame. The antenna set receives the distance measurement signal. The control module determines an orientation and a distance of the remote control according to the distance measurement signal received by the antenna set, and drives the motor assembly to move the support frame forward toward the remote control, making the support follow a user having the remote control and preventing other in-field persons and obstacles from affecting the support frame to follow the remote control.

Abstract: The invention discloses a seed used for crystalline silicon ingot casting. A seed according to a preferred embodiment of the invention includes a crystal and an impurity diffusion-resistant layer. The crystal is constituted by at least one grain. The impurity diffusion-resistant layer is formed to overlay an outer surface of the crystal. A crystalline silicon ingot fabricated by use of the seed of the invention has significantly reduced red zone and yellow zone.