Abstract: A polishing apparatus for double-sided polishing of semiconductor wafers including a first platen, a second platen, a wafer carrier, and a controller is disclosed. The controller is configured to perform operations including determining whether a batch of the semiconductor wafers is loaded on the wafer carrier for double-sided polishing and retrieving specification for the batch of semiconductor wafers. The operations include based on the retrieved specification, determining an amount of tuning required for one or more flatness control parameters, and based on the amount of tuning required for the one or more flatness control parameters, identifying, or generating a recipe to perform the double-sided polishing on the batch of the semiconductor wafers. The operations include storing statistical process control (SPC) feedback data in a database to perform one or more additional iterations of the double-sided polishing on the batch of the semiconductor wafers.

Abstract: A light-emitting device is provided. The light-emitting device generates a white light and includes at least one light-emitting diode. The at least one light-emitting diode generates a light beam with a broadband blue spectrum and includes a first semiconductor layer, a second semiconductor layer and a multiple quantum well structure. The multiple quantum well structure is located between the first semiconductor layer and the second semiconductor layer, and includes well layers and barrier layers. The well layers include a first well layer, a second well layer and third well layers different in indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of the well layers that are closest to the first semiconductor layer are the third well layers, and the first well layer is closer to the second semiconductor layer than the first semiconductor layer.

Abstract: A light-emitting device is provided. The light-emitting device generates a white light and includes at least one light-emitting diode. The at least one light-emitting diode generates a light beam with a broadband blue spectrum and includes a first semiconductor layer, a second semiconductor layer and a multiple quantum well structure. The multiple quantum well structure is located between the first semiconductor layer and the second semiconductor layer, and includes well layers and barrier layers. The well layers include a first well layer, a second well layer and third well layers different in indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.

Abstract: A light emitting diode package structure is provided. The light emitting diode package structure includes first and second chips. A value of an intensity of a peak wavelength of a first shoulder wave of the first chip divided by an intensity of a peak wavelength of a first main wave of the first chip is defined as a first intensity ratio. A value of an intensity of a peak wavelength of a second shoulder wave of the second chip divided by an intensity of a peak wavelength of a second main wave of the second chip is defined as a second intensity ratio. The first and second chips satisfy “a difference between the intensities of the peak wavelengths of the first and second main waves being less than or equal to 2.5 nanometers” and “a difference between the first and second intensity ratios being greater than 0.1”.

Abstract: A light emitting device is provided. The light emitting device includes a light emitting assembly having a first light emitting diode package structure and a second light emitting diode package structure. The light emitting assembly can generate a mixed light source having a spectral deviation index. The first light emitting diode package structure can generate a first light source having a first spectral deviation index. The second light emitting diode package structure can generate a second light source having a second spectral deviation index. When the first light source and the second light source are within a range from 460 to 500 nm, a sum of the first spectral deviation index and the second spectral deviation index is within a range from ?0.3 to 0.3, and a difference between the first spectral deviation index and the second spectral deviation index is at least greater than 0.2.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.

Abstract: An LED package structure includes a substrate and a light-emitting array. The substrate has a die bond area, and the light-emitting array is disposed in the die bond area. Each first light-emitting unit of the light-emitting array includes a first light-emitting chip and a first wavelength conversion layer of the light-emitting chip, each second light-emitting unit of the light-emitting array includes a second light-emitting chip and a second wavelength conversion layer covering the second light-emitting chip. A first light beam includes a first emission light generated by exciting the first wavelength conversion layer, and the second light beam includes a second emission light generated by exciting the second wavelength conversion layer, and the difference between the first and second emission light peak wavelengths is at least 30 nm.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.

Abstract: A light emitting diode package structure is provided. The light emitting diode package structure includes first and second chips. A value of an intensity of a peak wavelength of a first shoulder wave of the first chip divided by an intensity of a peak wavelength of a first main wave of the first chip is defined as a first intensity ratio. A value of an intensity of a peak wavelength of a second shoulder wave of the second chip divided by an intensity of a peak wavelength of a second main wave of the second chip is defined as a second intensity ratio. The first and second chips satisfy “a difference between the intensities of the peak wavelengths of the first and second main waves being less than or equal to 2.5 nanometers” and “a difference between the first and second intensity ratios being greater than 0.1”.

Abstract: A light emitting device is provided. The light emitting device includes a light emitting assembly having a first light emitting diode package structure and a second light emitting diode package structure. The light emitting assembly can generate a mixed light source having a spectral deviation index. The first light emitting diode package structure can generate a first light source having a first spectral deviation index. The second light emitting diode package structure can generate a second light source having a second spectral deviation index. When the first light source and the second light source are within a range from 460 to 500 nm, a sum of the first spectral deviation index and the second spectral deviation index is within a range from ?0.3 to 0.3, and a difference between the first spectral deviation index and the second spectral deviation index is at least greater than 0.2.

Abstract: An LED package structure includes a substrate and a light-emitting array. The substrate has a die bond area, and the light-emitting array is disposed in the die bond area. Each first light-emitting unit of the light-emitting array includes a first light-emitting chip and a first wavelength conversion layer of the light-emitting chip, each second light-emitting unit of the light-emitting array includes a second light-emitting chip and a second wavelength conversion layer covering the second light-emitting chip. A first light beam includes a first emission light generated by exciting the first wavelength conversion layer, and the second light beam includes a second emission light generated by exciting the second wavelength conversion layer, and the difference between the first and second emission light peak wavelengths is at least 30 nm.

Abstract: A light emitting diode (LED) package including a chip carrier, an adhesive layer, a light emitting diode (LED) chip and an anti-aging layer is provided. The adhesive is disposed on the chip carrier. The LED chip having a light emitting layer is adhered on the chip carrier by the adhesive layer, and is electrically connected with the chip carrier. The anti-aging layer is disposed between the adhesive and the chip carrier. In the LED package described above, the light emitted from the LED being illuminated on the adhesive layer is reduced or prevented by the anti-aging layer. Therefore, the aging phenomenon of the LED package is retarded, and the lifetime of the LED package is further enhanced.