Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: A reticle enclosure includes a base including a first surface, a cover including a second surface and coupled to the base with the first surface facing the second surface. The base and the cover form an internal space that includes a reticle. The reticle enclosure includes restraining mechanisms arranged in the internal space and for securing the reticle, and structures disposed adjacent the reticle in the internal space. The structures enclose the reticle at least partially, and limit passage of contaminants between the internal space and an external environment of the reticle enclosure. The structures include barriers disposed on the first and second surfaces. In other examples, a padding is installed in gaps between the barriers and the first and second surfaces. In other examples, the structures include wall structures disposed on the first and second surfaces and between the restraining mechanisms.

Abstract: A reticle enclosure includes a base including a first surface, a cover including a second surface and coupled to the base with the first surface facing the second surface. The base and the cover form an internal space that includes a reticle. The reticle enclosure includes restraining mechanisms arranged in the internal space and for securing the reticle, and structures disposed adjacent the reticle in the internal space. The structures enclose the reticle at least partially, and limit passage of contaminants between the internal space and an external environment of the reticle enclosure. The structures include barriers disposed on the first and second surfaces. In other examples, a padding is installed in gaps between the barriers and the first and second surfaces. In other examples, the structures include wall structures disposed on the first and second surfaces and between the restraining mechanisms.

Abstract: A method for preventing photomask contamination includes securing a photomask on a bottom surface of an electrostatic chuck; generating a first voltage at a peripheral area of the bottom surface of the electrostatic chuck to attract a particle onto the peripheral area of the bottom surface of the electrostatic chuck, wherein the peripheral area of the bottom surface of the electrostatic chuck is not directly above the photomask; after generating the first voltage, generating a second voltage at the peripheral area of the bottom surface of the electrostatic chuck to repulse the particle, wherein the first voltage and the second voltage have opposite electrical properties; and generating a third voltage, by using a collecting plate, near a sidewall of the photomask to attract the repulsed particle.

Abstract: A method for preventing photomask contamination includes generating a first electric field from an electrostatic chuck to attract a charged particle onto the electrostatic chuck, controlling the first electric field to detach the charged particle from the electrostatic chuck, and generating a second electric field below the electrostatic chuck to attract the charged particle.

Abstract: A reticle enclosure includes a base including a first surface, a cover including a second surface and coupled to the base with the first surface facing the second surface. The base and the cover form an internal space that includes a reticle. The reticle enclosure includes restraining mechanisms arranged in the internal space and for securing the reticle, and structures disposed adjacent the reticle in the internal space. The structures enclose the reticle at least partially, and limit passage of contaminants between the internal space and an external environment of the reticle enclosure. The structures include barriers disposed on the first and second surfaces. In other examples, a padding is installed in gaps between the barriers and the first and second surfaces. In other examples, the structures include wall structures disposed on the first and second surfaces and between the restraining mechanisms.

Abstract: A reticle enclosure includes a base including a first surface, a cover including a second surface and coupled to the base with the first surface facing the second surface. The base and the cover form an internal space that includes a reticle. The reticle enclosure includes restraining mechanisms arranged in the internal space and for securing the reticle, and structures disposed adjacent the reticle in the internal space. The structures enclose the reticle at least partially, and limit passage of contaminants between the internal space and an external environment of the reticle enclosure. The structures include barriers disposed on the first and second surfaces. In other examples, a padding is installed in gaps between the barriers and the first and second surfaces. In other examples, the structures include wall structures disposed on the first and second surfaces and between the restraining mechanisms.

Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: A method includes reducing refractive index of an environment at or adjacent an extreme ultraviolet (EUV) mask to below 1.0. The EUV mask is in an EUV lithography system that forms a projection beam of EUV radiation using EUV radiation emitted from a radiation source. The method further includes exposing the EUV mask to the projection beam of EUV radiation.

Abstract: A method for preventing photomask contamination includes generating a first electric field from an electrostatic chuck to attract a charged particle onto the electrostatic chuck, controlling the first electric field to detach the charged particle from the electrostatic chuck, and generating a second electric field below the electrostatic chuck to attract the charged particle.

Abstract: A method includes reducing refractive index of an environment at or adjacent an extreme ultraviolet (EUV) mask to below 1.0. The EUV mask is in an EUV lithography system that forms a projection beam of EUV radiation using EUV radiation emitted from a radiation source. The method further includes exposing the EUV mask to the projection beam of EUV radiation.

Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: A charged particle multi-beam lithography system includes an illumination sub-system that is configured to generate a charged particle beam; and multiple plates with a first aperture through the plates. The plates and the first aperture are configured to form a charged particle doublet. The system further includes a blanker having a second aperture whose footprint is smaller than that of the first aperture. The charged particle doublet is configured to demagnify a portion of the charged particle beam passing through the first aperture, thereby producing a demagnified beamlet. The blanker is configured to receive the demagnified beamlet from the charged particle doublet, and is further configured to conditionally allow the demagnified beamlet to travel along a desired path.

Abstract: A method of fabricating a Digital pattern generator (DPG) device is disclosed. The method includes forming an etch-stop-layer (ESL) over a bonding pad in a first region over a substrate, forming a pixel well in the second region over the substrate, forming an anti-charging layer over the bonding pad and along sidewalls of the pixel well. The bonding pad is covered by the ESL during the forming of the anti-charging layer over the bonding pad. The method also includes removing the anti-charging layer over the bonding pad. Therefore, after removing the anti-charging layer over the bonding pad, the bonding pad remains covered by the ESL.

Abstract: A charged particle multi-beam lithography system includes an illumination sub-system that is configured to generate a charged particle beam; and multiple plates with a first aperture through the plates. The plates and the first aperture are configured to form a charged particle doublet. The system further includes a blanker having a second aperture whose footprint is smaller than that of the first aperture. The charged particle doublet is configured to demagnify a portion of the charged particle beam passing through the first aperture, thereby producing a demagnified beamlet. The blanker is configured to receive the demagnified beamlet from the charged particle doublet, and is further configured to conditionally allow the demagnified beamlet to travel along a desired path.

Abstract: A method of fabricating a Digital pattern generator (DPG) device is disclosed. The method includes forming an etch-stop-layer (ESL) over a bonding pad in a first region over a substrate, forming a pixel well in the second region over the substrate, forming an anti-charging layer over the bonding pad and along sidewalls of the pixel well. The bonding pad is covered by the ESL during the forming of the anti-charging layer over the bonding pad. The method also includes removing the anti-charging layer over the bonding pad. Therefore, after removing the anti-charging layer over the bonding pad, the bonding pad remains covered by the ESL.

Abstract: An apparatus for use in a charged particle multi-beam lithography system is disclosed. The apparatus includes a plurality of charged particle doublets each having a first aperture and each configured to demagnify a beamlet incident upon the first aperture thereby producing a demagnified beamlet. The apparatus further includes a plurality of charged particle lenses each associated with one of the charged particle doublets, each having a second aperture, and each configured to receive the demagnified beamlet from the associated charged particle doublet and to realize one of two states: a switched-on state, wherein the demagnified beamlet is allowed to travel along a desired path, and a switched-off state, wherein the demagnified beamlet is prevented from traveling along the desired path. In embodiments, the first aperture is greater than the second aperture, thereby improving particle beam efficiency in the charged particle multi-beam lithography system.

Abstract: An apparatus for use in a charged particle multi-beam lithography system is disclosed. The apparatus includes a plurality of charged particle doublets each having a first aperture and each configured to demagnify a beamlet incident upon the first aperture thereby producing a demagnified beamlet. The apparatus further includes a plurality of charged particle lenses each associated with one of the charged particle doublets, each having a second aperture, and each configured to receive the demagnified beamlet from the associated charged particle doublet and to realize one of two states: a switched-on state, wherein the demagnified beamlet is allowed to travel along a desired path, and a switched-off state, wherein the demagnified beamlet is prevented from traveling along the desired path. In embodiments, the first aperture is greater than the second aperture, thereby improving particle beam efficiency in the charged particle multi-beam lithography system.