Abstract: Disclosed are apparatus and methods for optical coupling.

Abstract: A method for manufacturing a data line includes: forming a conductive layer on a substrate; forming a photoresist layer on a side of the conductive layer away from the substrate; exposing and then developing the photoresist layer to form a groove penetrating the photoresist layer, thus obtaining a patterned photoresist layer; and depositing a functional material electrochemically on the patterned photoresist layer, then removing the patterned photoresist layer to obtain the conductive layer with the patterned functional material layer, thereby obtaining the data line.

Abstract: A collaborative session (e.g., a virtual time capsule) in which access to a collaborative object and added virtual content is selectively provided to participants/users. In one example of the collaborative session, a participant (the host) creates a new session and invites participants to join. The session creator (i.e., the host) and other approved participants can access the contents of a session (e.g., which may be recorded using an application such as lens cloud feature; available from Snap Inc. of Santa Monica, California). A timestamp is associated with each received virtual content, and the users are provided with a timelapse of the collaborative object as a function of the timestamps.

Abstract: Disclosed are apparatus and methods for optical coupling.

Abstract: This application discloses a photoreceptor, a panel, and a method for manufacturing a photoreceptor. The photoreceptor includes a photosensitive layer. The photosensitive layer includes a subject entity including a plurality of holes, and an object entity including at least two photosensitive materials whose photosensitive wavelength bands are different. The holes of the subject entity are filled with the photosensitive materials.

Abstract: Collaborative sessions in which access to a collaborative object and added virtual content is selectively provided to participants/users. In one example of the collaborative session, a participant crops media content by use of a hand gesture to produce an image segment that can be associated to the collaborative object. The hand gesture resembles a pair of scissors and the camera and processor of the client device track a path of the hand gesture to identify an object within a displayed image to create virtual content of the identified object. The virtual content created by the hand gesture is then associated to the collaborative object.

Abstract: The present application discloses an array substrate, a manufacturing method therefor and a display panel. The manufacturing method for the array substrate includes steps of: forming a base layer; forming a semiconductor layer on the base layer; forming a metal layer on the semiconductor layer, where the upper surface of the metal layer contains a first nitride or a first oxide; etching the metal layer into a source/drain electrode; and forming a passivation layer on the source/drain electrode, where the passivation layer is a second nitride structure corresponding to the first nitride or a second oxide structure corresponding to the first oxide.

Abstract: The present application discloses a manufacturing method for a graphene film, a porous silica powder and a transparent conductive layer. The manufacturing method for a graphene film includes steps of: providing a porous material powder; placing the porous material powder in an atomic layer deposition device; forming a porous material template having a metal catalyst layer in pores; and preparing the graphene film on the porous material template.

Abstract: The present disclosure relates to a source-drain electrode and a method for manufacturing the same, an array substrate and a method for manufacturing the same, and a display mechanism. A method for manufacturing a source-drain electrode includes steps of: disposing a conductive layer on an underlay; forming a photoresist layer on a side of the conductive layer away from the underlay; exposing and then developing the photoresist layer to form grooves passing through the photoresist layer on the photoresist layer, so as to form a patterned photoresist layer; and electrochemically depositing a functional material on the patterned photoresist layer and then removing the photoresist layer to obtain the conductive layer on which a patterned layer is formed, so as to obtain the source-drain electrode. The source-drain electrode manufactured by the above method has a higher conductivity.

Abstract: The present disclosure relates to an insulation unit based on an array substrate and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display mechanism. The method for manufacturing the insulation unit based on the array substrate includes: providing an aluminum layer on a substrate; and anodizing the aluminum layer to oxidize the aluminum layer to form the insulation unit. The method for manufacturing the insulation unit based on the array substrate can manufacture an insulation unit with a better corrosion resistance.

Abstract: A manufacturing method of a silicon nitride thin film, a thin film transistor, and a display panel are disclosed, the method including: providing a silane precursor into an atomic layer deposition apparatus for a preset time period, and remaining the silane precursor for a preset time period; providing an inert gas thereinto for a preset time period for the first time, and purging the silane precursor; providing a nitrogen supplying precursor for a preset time period, and remaining the nitrogen supplying precursor for a preset time period; providing the inert gas for a preset time period for the second time, and purging the nitrogen supplying precursor; repeating for a preset number of times the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precursor and providing the inert gas for the second time to form the silicon nitride thin film.

Abstract: The present disclosure provides a curved display panel and a manufacturing method thereof and a display device. The curved display panel includes a first substrate, a second substrate, a liquid crystal layer, a first alignment layer and a second alignment layer. The first substrate and the second substrate are opposite to each other. The first alignment layer is located on a surface of the first substrate facing the second substrate. The second alignment layer is located on a surface of second substrate facing the first substrate. The liquid crystal layer is located between the first alignment layer and the second alignment layer. The first alignment layer includes a porous structure layer and alignment materials. The porous structure layer defines a plurality of spaced filling holes. The plurality of filling holes are perpendicular to the surface of the first substrate. The alignment materials are filled within the plurality of filling holes.

Abstract: Disclosed is a manufacture method of the array substrate, including: sequentially forming a gate, a gate insulating layer, an active layer, an ohmic contact layer and a metal layer on a substrate, forming a photoetching mask on the metal layer, where thickness of the photoetching mask in a half exposure area of the mask plate is from 2000 ? to 6000 ?; etching the metal layer, the ohmic contact layer and the active layer outside a covering area of the photoetching mask; ashing the photoetching mask for a preset time with an ashing reactant, wherein the ashing reactant comprises oxygen, and the preset time is from 70 seconds to 100 seconds; and sequentially etching the metal layer, the ohmic contact layer and the active layer based on the ashed photoetching mask, and forming a channel region of the array substrate. The present disclosure further discloses an array substrate, and a display panel.

Abstract: The present application discloses a manufacturing method of a silicon nitride thin film, a thin film transistor and a display panel, the method includes following steps: providing a silane precursor into an atomic layer deposition apparatus for a preset time period, and remaining the silane precursor for a preset time period after the provision; providing an inert gas into the atomic layer deposition apparatus for a preset time period for the first time, and purging the silane precursor; providing a nitrogen supplying precursor into the atomic layer deposition apparatus for a preset time period, and remaining the nitrogen supplying precursor for a preset time period after the provision; providing the inert gas into the atomic layer deposition apparatus for a preset time period for the second time, and purging the nitrogen supplying precursor; repeating for a preset number of times the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precurso

Abstract: The present application discloses a manufacturing method for a gate electrode and a thin film transistor, and a display panel, including: depositing an aluminum film on a substratum by physical vapor deposition; depositing a molybdenum film over the aluminum film by atomic layer deposition; and etching the aluminum film and the molybdenum film to form the gate electrode of a predetermined pattern.

Abstract: The present application discloses a display panel and a manufacturing method therefor, and the method includes steps of: forming a photosensitive element layer, forming a light collimating layer on the photosensitive element layer, and forming an active light-emitting matrix layer on the light collimating layer; where the step of forming the light collimating layer includes: providing a metal substrate, putting the metal substrate into an electrolyte, and preparing a porous oxidized metal as the light collimating layer by a two-step oxidation method.

Abstract: The present disclosure provides a display panel and a manufacturing method for the display panel. The display panel includes a substrate, a switch assembly disposed on the substrate, and a light-sensing assembly disposed on a side of the switch assembly. The switch assembly comprises an indium gallium zinc oxide (IGZO) layer.

Abstract: This application discloses a display panel, a method for manufacturing a display panel, and a display device. The method includes steps of forming, in a display region of the display panel, a first active switch including a first semiconductor layer, and forming, in a non-display region of the display panel, a second active switch including a second semiconductor layer. A material of the first semiconductor layer formed is an oxide, a material of the second semiconductor layer formed is polysilicon, and the first semiconductor layer and the second semiconductor layer are formed on an identical layer.

Abstract: The present application discloses a manufacturing method for a display panel and the display panel, and the manufacturing method includes a manufacture procedure of forming an array substrate, where the manufacture procedure of forming an array substrate includes: forming a buffer layer with a preset pattern on a glass substrate; placing the glass substrate with the buffer layer formed thereon into an electrochemical deposition device, and performing electrochemical deposition to form a copper alloy metal layer corresponding to the buffer layer; heating and annealing the copper alloy metal layer to form a first metal layer; sequentially forming an insulating layer, an active layer, a second metal layer, a passivation layer and a transparent electrode layer on the first metal layer, where the first metal layer includes a buffer layer and a copper alloy metal layer.

Abstract: Disclosed are a manufacturing method of an array substrate, an array substrate and a display device. The manufacturing method of the array substrate includes: providing a substrate; depositing and patterning a gate layer on the substrate; depositing a protective layer on the substrate covered with the gate layer by atomic layer deposition; and depositing and patterning an amorphous silicon layer and an ohmic contact layer on the protective layer. The uniform protective layer of the present disclosure reduces the influence on the field effect mobility of the thin film transistor, makes the display of the product more stable, and improves the display effect.