Abstract: Structures and formation methods of a semiconductor device structure are provided. A method includes depositing a first layer including Al atoms to cover a first dielectric layer in a first conductive feature. The method also includes depositing a second layer including N atoms over the first layer. The first layer and the second layer form an etch stop layer including aluminum nitride. The etch stop layer includes vacancies and has an atomic percentage of Al to Al and N. The method also includes filling the vacancies in the etch stop layer with additional N atoms to reduce the atomic percentage of Al to Al and N. In addition, the method includes forming a second dielectric layer over the etch stop layer. The method also includes forming a second conductive feature in the second dielectric layer and the etch stop layer to be connected to the first conductive feature.

Abstract: Structures and formation methods of a semiconductor device structure are provided. A method includes depositing a first layer including Al atoms to cover a first dielectric layer in a first conductive feature. The method also includes depositing a second layer including N atoms over the first layer. The first layer and the second layer form an etch stop layer including aluminum nitride. The etch stop layer includes vacancies and has an atomic percentage of Al to Al and N. The method also includes filling the vacancies in the etch stop layer with additional N atoms to reduce the atomic percentage of Al to Al and N. In addition, the method includes forming a second dielectric layer over the etch stop layer. The method also includes forming a second conductive feature in the second dielectric layer and the etch stop layer to be connected to the first conductive feature.

Abstract: A wafer curing apparatus including a plate configured to pass ultraviolet light. The wafer curing apparatus further includes an antireflective coating on a light incident surface of the plate. The antireflective coating has an opening in a central portion thereof. A method of curing a wafer including emitting ultraviolet light from an ultraviolet light source. The method further includes transmitting the ultraviolet light through an ultraviolet transmissive plate having an antireflective coating thereon. The antireflective coating including an opening in a central portion thereof. The method further includes irradiating a wafer with the ultraviolet light transmitted through the ultraviolet transmissive plate.