Abstract: A fabricating method of nano-powder is provided. First, a mixture having at least a first material and a second material is provided. Then, the mixture is sintered to obtain a single phase alloy body. After that, the single phase alloy body is pre-crumbled to obtain a powder to be ground. Then, a chemical dispersant is added into the powder to further be ground, so as to obtain the nano-powder.

Abstract: A phase-change recording film with stable crystallization rate and a composite target for producing the film are composed of 10 to 50 atomic percent of phase-change material containing Te or Sb and 50 to 90 atomic percent of dielectric material. Another target for producing the film is composed of dielectric material and a phase-change material containing Te or Sb attached to the dielectric material. A co-sputtering process for producing the film uses a target made of dielectric material and a target made of phase-change material containing Te or Sb to co-sputter. Because the crystallization rate of the phase-change recording film does not change as the thickness of phase-change recording film varies, manufacturing the phase-change recording film does not require to be precisely controlled unduly.

Abstract: A method for preparing nanocomposite ZnO—SiO2 fluorescent thin film by magnetron sputtering is proposed. ZnO is formed as nano-sized crystalline particles uniformly dispersed in the amorphous SiO2 matrix after the sputtering. The photoluminescence (PL) revealed that the spectra consisted of three emission bands, violet, blue and green-yellow and the mixed light turns out to be white. By adjusting the ZnO doping concentration, the relative emission intensities of the three bands can be modulated so that white light with different color temperatures can be obtained. By the invention, the whole process comprised of only one single-layer deposition that can be applied on any substrate.

Abstract: A phase change optical recording medium. A recording layer is formed on a substrate having a plurality of non-metal particles disposed therein uniformly. Consequently, phase change can occur not only in the interface between crystal and amorphous regions, but also the interface between the particles and the amorphous region.