Abstract: A semiconductor device includes a semiconductor layer and a gate structure on the semiconductor layer. The gate structure includes a multi-stepped gate dielectric on the semiconductor layer and a gate electrode on the multi-stepped gate dielectric. The multi-stepped gate dielectric includes a first gate dielectric segment having a first thickness and a second gate dielectric segment having a second thickness that is less than the first thickness.

Abstract: The present disclosure provides a method for manufacturing integrated circuit devices including an electron beam inspection. The method includes forming a silicide region on a substrate. In an embodiment, the silicide region is formed to provide contact to a device feature such as a source or drain region. An electron beam scan is then performed on the substrate. The electron beam scan includes a first scan and a second scan. The first scan includes a lower landing energy than the second scan. In an embodiment, the first scan provides a dark silicide image analysis and a bright image analysis. In an embodiment, the second scan provides a dark silicide image analysis. The method continues to form a conductive plug after performing the electron beam scan.

Abstract: A tunable light transceiver module for adjusting a photoelectric device is provided. The tunable structure includes a photoelectric device, a stage, and a set of two-dimensional actuators having a first direction actuator and a second direction actuator. The photoelectric device is installed on the stage. The first direction actuation device and the second direction actuation device are coupled to the stage for controlling the movement of the stage along the first direction and the second direction, which are parallel to the stage. The tunable module may comprise an additional vertical actuator for controlling the movement of the stage along the direction perpendicular to the stage, thus realizing the displacement adjustment in three dimensions.