Abstract: A semiconductor device includes a bottom semiconductor die including a bottom semiconductor die sidewall, a top semiconductor die bonded to the bottom semiconductor die and including a top semiconductor die sidewall, and a molding material layer formed on an upper surface of the bottom semiconductor die, on the top semiconductor die sidewall, and on the bottom semiconductor die sidewall. A method of forming a semiconductor device includes mounting a bottom semiconductor die including a bottom semiconductor die sidewall on a carrier substrate, mounting a top semiconductor die including a top semiconductor die sidewall on the bottom semiconductor die, and forming a molding material layer on an upper surface of the bottom semiconductor die, on the top semiconductor die sidewall, and on the bottom semiconductor die sidewall.

Abstract: A semiconductor device includes a first semiconductor die and a second semiconductor die connected to the first semiconductor die. Each of the first semiconductor die and the second semiconductor die includes a substrate, a conductive bump formed on the substrate and a conductive contact formed on the conductive bump. The conductive contact has an outer lateral sidewall, there is an inner acute angle included between the outer lateral sidewall and the substrate is smaller than 85°, and the conductive contact of the first semiconductor die is connected opposite to the conductive contact of the second semiconductor die.

Abstract: A package structure and a formation method are provided. The method includes providing a semiconductor substrate and bonding a first chip structure on the semiconductor substrate through metal-to-metal bonding and dielectric-to-dielectric bonding. The method also includes bonding a second chip structure over the semiconductor substrate through solder-containing bonding structures. The method further includes forming a protective layer surrounding the second chip structure. A portion of the protective layer is between the semiconductor substrate and a bottom of the second chip structure.

Abstract: In an embodiment, a structure includes: a first integrated circuit die including first die connectors; a first dielectric layer on the first die connectors; first conductive vias extending through the first dielectric layer, the first conductive vias connected to a first subset of the first die connectors; a second integrated circuit die bonded to a second subset of the first die connectors with first reflowable connectors; a first encapsulant surrounding the second integrated circuit die and the first conductive vias, the first encapsulant and the first integrated circuit die being laterally coterminous; second conductive vias adjacent the first integrated circuit die; a second encapsulant surrounding the second conductive vias, the first encapsulant, and the first integrated circuit die; and a first redistribution structure including first redistribution lines, the first redistribution lines connected to the first conductive vias and the second conductive vias.

Abstract: The present application provides a method for treating and/or preventing an infection of Coronavirus comprising: providing a therapeutically effective amount of a composition comprising interferon to a subject via sublingual administration and/or buccal administration; wherein the Coronavirus comprises SARS-CoV-2.