Abstract: An optical nano-biosensing system and a method thereof are provided. The optical nano-biosensing system includes a nano-plasmonic sensing device, a high-resolution analog-to-digital converter, a signal acquisition and processing device, and an intelligent electronic device. The nano-plasmonic sensing device further includes a light-source control circuit, a sample receiver, a light detector, and a signal-amplifying circuit. The sample receiver receives a sample. The light-source control circuit generates an incident light from a light source to be projected onto the sample receiver. The light detector detects an emergent light from the sample receiver to generate a detection signal. The signal-amplifying circuit converts the detection signal to generate an amplified signal. The high-resolution analog-to-digital converter digitizes the amplified signal to generate a digital signal.

Abstract: An optical nano-biosensing system and a method thereof are provided. The optical nano-biosensing system includes a nano-plasmonic sensing device, a high-resolution analog-to-digital converter, a signal acquisition and processing device, and an intelligent electronic device. The nano-plasmonic sensing device further includes a light-source control circuit, a sample receiver, a light detector, and a signal-amplifying circuit. The sample receiver receives a sample. The light-source control circuit generates an incident light from a light source to be projected onto the sample receiver. The light detector detects an emergent light from the sample receiver to generate a detection signal. The signal-amplifying circuit converts the detection signal to generate an amplified signal. The high-resolution analog-to-digital converter digitizes the amplified signal to generate a digital signal.

Abstract: A zero-crossing-based analog-to-digital converter having current mismatch correction capability, that can raise resolution, energy efficiency, and sampling rate of a fully differential zero-crossing circuit, is realized through a 90 nm CMOS technology. The circuit is used mainly to correct offset error, to use a current supply separation technology and a digital correction mechanism to correct mismatch among a plurality of current supplies.

Abstract: A timing calibration circuit for a time-interleaved analog-to-digital converter (ADC) is provided. The timing calibration circuit includes a correlation unit, an adaptive filter and a delay cell. The correlation unit generates a first correlation coefficient according to a first zero-crossing possibility distribution between a first digital data and a second digital data, and generates a second correlation coefficient according to a second zero-crossing possibility distribution between the second digital data and a third digital data. The adaptive filter generates a predicted time skew according to a difference between the first correlation coefficient and the second correlation coefficient. The delay cell calibrates a clock signal of the ADC according to the predicted time skew.

Abstract: A timing calibration circuit for a time-interleaved analog-to-digital converter (ADC) is provided. The timing calibration circuit includes a correlation unit, an adaptive filter and a delay cell. The correlation unit generates a first correlation coefficient according to a first zero-crossing possibility distribution between a first digital data and a second digital data, and generates a second correlation coefficient according to a second zero-crossing possibility distribution between the second digital data and a third digital data. The adaptive filter generates a predicted time skew according to a difference between the first correlation coefficient and the second correlation coefficient. The delay cell calibrates a clock signal of the ADC according to the predicted time skew.

Abstract: A zero-crossing-based analog-to-digital converter having current mismatch correction capability, that can raise resolution, energy efficiency, and sampling rate of a fully differential zero-crossing circuit, is realized through a 90 nm CMOS technology. The circuit is used mainly to correct offset error, to use a current supply separation technology and a digital correction mechanism to correct mismatch among a plurality of current supplies.

Abstract: A current-mode DAC includes at least one to-be-corrected one current source, a referential current source, a current comparator for comparing the current of the to-be-corrected current source and the current of the referential current source, a correction controller, a successive approximation register controller controlled by the correction controller and referring to the result of the comparison for carrying out successive approximation, and at least one correction DAC electrically connected with the successive approximation register controller and the to-be-corrected current source for referring to the result acquired from the successive approximation register controller and then providing a bias for the to-be-corrected current source for carrying out current correction. Accordingly, the corrected current can have the excellent accuracy.

Abstract: A current-mode DAC includes at least one to-be-corrected one current source, a referential current source, a current comparator for comparing the current of the to-be-corrected current source and the current of the referential current source, a correction controller, a successive approximation register controller controlled by the correction controller and referring to the result of the comparison for carrying out successive approximation, and at least one correction DAC electrically connected with the successive approximation register controller and the to-be-corrected current source for referring to the result acquired from the successive approximation register controller and then providing a bias for the to-be-corrected current source for carrying out current correction. Accordingly, the corrected current can have the excellent accuracy.

Abstract: The present invention discloses a 10T SRAM architecture, wherein two symmetric data access paths are added to a 6T SRAM architecture. Each data access path has two transistors, whereby the read signals are no more driven by the memory unit, wherefore the dimensions of the transistors inside the 10T SRAM cell are no more limited by the required driving capability. Thus, the 10T SRAM architecture can use the minimum-size transistors to achieve a higher operation speed and meet the requirement of the high-speed digital circuit. Further, the 10T SRAM cell of the present invention can achieve an SNM-free feature.