Abstract: A solid-state light-emitting device includes: a substrate; an epitaxial layer structure on the substrate and including a first-type area and a second-type area; a first current blocking layer disposed on the epitaxial layer structure and located in the first-type area; a current spreading layer covering the first current blocking layer so that the first current blocking layer is located between the current spreading layer and the epitaxial layer structure; a first adhesive reinforcing layer disposed on a side of the current spreading layer away from the first current blocking layer and including a plurality of first through holes; a first electrode disposed on a side of the first adhesion reinforcing layer away from the current spreading layer and filled into the plurality of first through holes to electrically contact with the current spreading layer. Therefore, the light-emitting efficiency of the solid-state light-emitting device is improved.

Abstract: A semiconductor light-emitting device includes: a substrate, an epitaxial layer structure disposed on the substrate, a first current blocking layer disposed on the epitaxial layer structure, a second current blocking layer disposed on the epitaxial layer structure, a current spreading layer disposed on the epitaxial layer structure and covering the first current blocking layer; a first electrode disposed on a side of the current spreading layer facing away from the epitaxial layer structure, and a second electrode disposed on the epitaxial layer structure and covering the second current blocking layer. The first current blocking layer includes a first main blocking portion and a first extended blocking portion. The second current blocking layer includes a second main blocking portion and a second extended blocking portion. The second extended blocking portion includes spacings. The first extended blocking portion is formed with convex structures. The convex structures are aligned with the spacings.

Abstract: A LED package comprises an LED chip, a reflective structure which encloses the LED chip, a wavelength conversion structure placed on the LED chip, and an absorbing structure which encloses or is placed on the reflective structure.

Abstract: A light-emitting device comprises a light-emitting element, a covering structure, a quantum dot material block, and an adhesive structure is disclosed. The covering structure has a depressed part. The quantum dot material block is filled into the depressed part and enclosed by the light-emitting element and the covering structure. The light-emitting element, the covering structure, and the quantum dot material block are bonded together through the adhesive structure. Since the quantum dot material block is enclosed by the covering structure and the light-emitting element, the outer moisture and oxygen are blocked by the covering structure and the light-emitting element from the quantum dot material block, the decreasing emitting efficiency of the quantum dot material is further alleviated.

Abstract: A light-emitting device includes a light-emitting unit comprising a top surface and a first side surface; a light-transmitting layer covers the top surface and the first side surface; a wavelength conversion structure disposed on the light-transmitting layer; a protective layer covering the second side surface and the light-transmitting layer; and a reflective layer surrounding the protective layer. The wavelength conversion structure includes a wavelength conversion layer, a first barrier layer disposed on the wavelength conversion layer, a second barrier layer disposed under the wavelength conversion layer, the wavelength conversion layer, the first barrier layer, and the second barrier layer are collectively formed a second side surface.

Abstract: A light-emitting device comprises a light-emitting element, a covering structure, a quantum dot material block, and an adhesive structure is disclosed. The covering structure has a depressed part. The quantum dot material block is filled into the depressed part and enclosed by the light-emitting element and the covering structure. The light-emitting element, the covering structure, and the quantum dot material block are bonded together through the adhesive structure. Since the quantum dot material block is enclosed by the covering structure and the light-emitting element, the outer moisture and oxygen are blocked by the covering structure and the light-emitting element from the quantum dot material block, the decreasing emitting efficiency of the quantum dot material is further alleviated.

Abstract: A semiconductor light-emitting device includes: a substrate, an epitaxial layer structure disposed on the substrate, a first current blocking layer disposed on the epitaxial layer structure, a second current blocking layer disposed on the epitaxial layer structure, a current spreading layer disposed on the epitaxial layer structure and covering the first current blocking layer; a first electrode disposed on a side of the current spreading layer facing away from the epitaxial layer structure, and a second electrode disposed on the epitaxial layer structure and covering the second current blocking layer. The first current blocking layer includes a first main blocking portion and a first extended blocking portion. The second current blocking layer includes a second main blocking portion and a second extended blocking portion. The second extended blocking portion includes spacings. The first extended blocking portion is formed with convex structures. The convex structures are aligned with the spacings.

Abstract: A solid-state light-emitting device includes: a substrate; an epitaxial layer structure on the substrate and including a first-type area and a second-type area; a first current blocking layer disposed on the epitaxial layer structure and located in the first-type area; a current spreading layer covering the first current blocking layer so that the first current blocking layer is located between the current spreading layer and the epitaxial layer structure; a first adhesive reinforcing layer disposed on a side of the current spreading layer away from the first current blocking layer and including a plurality of first through holes; a first electrode disposed on a side of the first adhesion reinforcing layer away from the current spreading layer and filled into the plurality of first through holes to electrically contact with the current spreading layer. Therefore, the light-emitting efficiency of the solid-state light-emitting device is improved.

Abstract: A light-emitting device includes a light-emitting unit comprising a top surface and a first side surface; a light-transmitting layer covers the top surface and the first side surface; a wavelength conversion structure disposed on the light-transmitting layer; a protective layer covering the second side surface and the light-transmitting layer; and a reflective layer surrounding the protective layer.

Abstract: A light-emitting device includes a light-emitting unit, a light-transmitting layer, a wavelength conversion structure, and a reflective layer. The light-emitting unit includes a top surface and a first side surface. The light-transmitting layer covers the top surface and the first side surface of the light-emitting unit. The wavelength conversion structure is located on the light-transmitting layer. The wavelength conversion structure includes a wavelength conversion layer, a first barrier layer located on the wavelength conversion layer, a second barrier layer located under the wavelength conversion layer, and a third barrier layer covering side surfaces of the wavelength conversion layer, the first barrier layer, and the second barrier layer. The reflective layer surrounds the light-transmitting layer and the wavelength conversion structure.

Abstract: A LED package comprises an LED chip, a reflective structure which encloses the LED chip, a wavelength conversion structure placed on the LED chip, and an absorbing structure which encloses or is placed on the reflective structure.

Abstract: A light-emitting device comprises a light-emitting element, a covering structure, a quantum dot material block, and an adhesive structure is disclosed. The covering structure has a depressed part. The quantum dot material block is filled into the depressed part and enclosed by the light-emitting element and the covering structure. The light-emitting element, the covering structure, and the quantum dot material block are bonded together through the adhesive structure. Since the quantum dot material block is enclosed by the covering structure and the light-emitting element, the outer moisture and oxygen are blocked by the covering structure and the light-emitting element from the quantum dot material block, the decreasing emitting efficiency of the quantum dot material is further alleviated.

Abstract: A light-emitting device includes a light-emitting unit, a light-transmitting layer, a wavelength conversion structure, and a reflective layer. The light-emitting unit includes a top surface and a first side surface. The light-transmitting layer covers the top surface and the first side surface of the light-emitting unit. The wavelength conversion structure is located on the light-transmitting layer. The wavelength conversion structure includes a wavelength conversion layer, a first barrier layer located on the wavelength conversion layer, a second barrier layer located under the wavelength conversion layer, and a third barrier layer covering side surfaces of the wavelength conversion layer, the first barrier layer, and the second barrier layer. The reflective layer surrounds the light-transmitting layer and the wavelength conversion structure.